The present invention provides a display device using a semiconductor light-emitting element and a manufacturing method therefor, the display device transferring semiconductor light-emitting elements on a temporary substrate, and then directly implementing, through a stack process, the structure of a wiring substrate on the temporary substrate on which the semiconductor light-emitting elements are arrayed, thereby enabling the semiconductor light-emitting elements and the wiring substrate to be electrically connected.

A light emitting element and a display device including the same are provided. The light emitting element includes: a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a passivation layer surrounding an outer surface of at least one selected from the first semiconductor layer, the second semiconductor layer, and the active layer; and an insulation layer surrounding an outer surface of the passivation layer, wherein the passivation layer includes a two-dimensional (2D) material.

A display device includes a base substrate, a partitioning wall on the base substrate, wherein the partitioning wall includes a first partitioning wall, and a second partitioning wall on the first partitioning wall, and a light emitting element spaced from the partitioning wall and located in a space surrounded by the partitioning wall in a plan view. The first partitioning wall and the light emitting element include a same material. The second partitioning wall includes a transparent conductive oxide.

Provided are a display base plate and a preparation method thereof and a display apparatus, belonging to the technical field of display devices. The display base plate comprises a substrate, and a light-emitting diode and a driving circuit which are patterned and arranged on one side of the substrate, and the light-emitting diode comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked; and the driving circuit is respectively connected with the first semiconductor layer and the second semiconductor layer, and is used for driving the light-emitting diode to emit light. By the display base plate and the preparation method thereof and the display apparatus provided by the embodiment of the application, the difficulty of integrating the driving circuit and the light-emitting diode in the display base plate can be reduced, so that a preparation process of the display base plate is simpler.

Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

A display device includes: a substrate having a display area and a non-display area; and a pixel in each of a pixel area in the display area. Each of the pixels includes: an insulating layer on the substrate and having an opening; first and second electrodes on the insulating layer and spaced apart from each other; a plurality of light emitting elements in the opening; a first contact electrode electrically connecting one end of the light emitting elements and the first electrode to each other; a second contact electrode electrically connecting another end of the light emitting elements and the second electrode to each other; a first insulating pattern on the first contact electrode; and a second insulating pattern on the second contact electrode. The first insulating pattern and the second insulating pattern are on the same layer and spaced apart from each other.

A light emitting element includes a first surface corresponding to an end of the light emitting element, a second surface corresponding to another end of the light emitting element, a first semiconductor layer adjacent to the first surface, the first semiconductor layer including a first type of semiconductor, a second semiconductor layer adjacent to the second surface, the second semiconductor layer including a second type of semiconductor different from the first type of semiconductor, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. An area of the first surface is larger than an area of the second surface, and a distance between the first surface and the second surface is shorter than a length defined by the first surface.

The invention relates to an optoelectronic semiconductor component, comprising a first semiconductor layer stack, which comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The optoelectronic semiconductor component additionally has a first contact element and a second contact element. The first semiconductor layer stack and the second semiconductor layer are arranged one above the other. The second semiconductor layer is electrically connected to the second contact element. A part of a first main surface of the first semiconductor layer stack adjoins the first contact element, and a part of the first main surface of the first semiconductor layer stack is structured such that both a plurality of protruding regions as well as connection regions are formed. The connection regions adjoin regions in which a part of the first main surface of the first semiconductor layer stack adjoins the first contact element, and the connection regions have a lateral extension which is greater than five times the average lateral extension of the protruding regions.

A light-emitting chip includes a light-emitting unit, first and second electrode units. The light-emitting unit includes first and second conductivity type semiconductor layers and an active layer. The first electrode unit includes two first electrodes which are spaced apart from each other by a first distance, and which are electrically connected to the first conductivity type semiconductor layer. The second electrode unit includes two second electrodes electrically connected to the second conductivity type semiconductor layer. The first and second electrode units are spaced apart from each other by a second distance, and the first distance is greater than the second distance.

A display device comprises a substrate, a first electrode on the substrate and extending in a first direction, a second electrode on the substrate and extending in the first direction, the second electrode being spaced apart from the first electrode in a second direction, a first insulating layer on the first electrode and the second electrode, light-emitting elements on the first insulating layer, the light-emitting elements being disposed on the first electrode and the second electrode, a second insulating layer disposed on the light-emitting elements, a first contact electrode disposed on the first electrode and electrically contacting the light-emitting elements, and a second contact electrode disposed on the second electrode and electrically contacting the light-emitting elements. The second insulating layer comprises patterns that cover at least part of the light-emitting elements and are spaced apart from one another in the first direction.