A method for manufacturing an LED structure includes forming a first semiconductor layer on a first substrate; performing a first implantation operation to form a first implanted region and a first non-implanted region in a second doping semiconductor layer of the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; performing a second implantation operation to form a second implanted region and a second non-implanted region in a fourth doping semiconductor layer of the second semiconductor layer; performing a first etch operation to remove a portion of the second semiconductor layer and expose at least the first non-implanted region; performing a second etch operation to expose a plurality of contacts of a driving circuit formed in the first substrate; and electrically connecting the first non-implanted region and the second non-implanted region with the plurality of contacts.

A display device includes a substrate in which a plurality of sub pixels are defined; a pair of low potential power lines are in a sub pixel of the plurality of sub pixels; and a plurality of light emitting diodes that overlap an area between the pair of low potential power lines. Each of the plurality of light emitting diodes includes a first semiconductor layer; an emission layer; a second semiconductor layer; a first insulating film that encloses side surfaces of the first semiconductor layer, the emission layer, and the second semiconductor layer; a side electrode on the first insulating film; and a first electrode that is in contact with a bottom surface of the first semiconductor layer and a lower part of the side electrode.

An optical projection device and a method of producing the optical projection device are described. The optical projection device includes: a plurality of LEDs (light-emitting diodes), the LEDs each including a semiconductor mesa laterally spaced apart from one another by a grid structure. Each of the semiconductor mesas includes an n-type material and a p-type material adjoining at least partly the n-type material. The grid structure at least partly laterally surrounds at least the n-type material of each of the semiconductor mesas. The grid structure includes a conductive material that electrically interconnects the n-type material of the semiconductor mesas. The grid structure is configured to block optical crosstalk between light emitted by the LEDs.

Methods for forming packaged semiconductor devices including backside power rails and packaged semiconductor devices formed by the same are disclosed. In an embodiment, a device includes a first integrated circuit device including a first transistor structure in a first device layer; a front-side interconnect structure on a front-side of the first device layer; and a backside interconnect structure on a backside of the first device layer, the backside interconnect structure including a first dielectric layer on the backside of the first device layer; and a first contact extending through the first dielectric layer to a source/drain region of the first transistor structure; and a second integrated circuit device including a second transistor structure in a second device layer; and a first interconnect structure on the second device layer, the first interconnect structure being bonded to the front-side interconnect structure by dielectric-to-dielectric and metal-to-metal bonds.

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

A display panel includes: a substrate; a plurality of substrate electrodes on the substrate; a plurality of first light emitting diodes electrically connected to the plurality of substrate electrodes, and configured to emit light of a first color; and a plurality of second light emitting diodes electrically connected to the plurality of substrate electrodes, each of the plurality of second light emitting diodes being configured to emit light of a second color and emit light of a third color, wherein the second color and the third color are different from the first color.

A micro light emitting diode (LED) having a high light extraction efficiency includes a bottom conductive layer, a light emitting layer on the bottom conductive layer, and a top conductive structure on the light emitting layer. The micro LED additionally includes a conductive side arm electrically connecting the sidewall of the light emitting layer with the bottom conductive layer, and a reflective bottom dielectric layer arranged under the light emitting layer and above the bottom conductive layer. In some embodiments, the micro LED further includes an ohmic contact between the top conductive structure and the light emitting layer that has a small area and is transparent, thereby increasing the light emergent area and improving the light extraction efficiency.

A light emitting device includes: a base substrate; a plurality of unit regions provided on the base substrate; a barrier disposed at a boundary of the unit regions to surround each of the unit regions; a dam disposed in each of the unit regions to be spaced apart from the barrier; a first electrode provided in each of unit light emitting regions surrounded by the dam; a second electrode disposed in each of the unit light emitting regions, the second electrode of which at least one region is provided opposite to the first electrode; and one or more LEDs provided in each of the unit light emitting regions, the one or more LEDs being electrically connected between the first electrode and the second electrode.

A display device includes a substrate having a pixel electrode, a light emitting element disposed on the pixel electrode and including a first semiconductor layer, an active layer, and a second semiconductor layer, a step coverage prevention layer surrounding the light emitting element in a plan view, a common electrode disposed on the light emitting element and the step coverage prevention layer, and an oxidation prevention layer disposed on a portion of the common electrode that does not overlap the light emitting element in a thickness direction. The common electrode includes a first portion disposed on the light emitting element and a second portion disposed between the oxidation prevention layer and the step coverage prevention layer, and a material forming the first portion is an oxide of a material forming the second portion.

A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.