A light emitting plate, a wiring plate and a display device are provided. The light emitting plate includes light emitting units. Each light emitting unit includes a light emitting sub-unit including a connection line unit and a light emitting diode chip connected with the connection line unit. The connection line unit includes electrical contact pairs, and each electrical contact pairs includes a first electrode contact and a second electrode contact; in each connection line unit, the second electrode contacts are electrically connected with each other, the first electrode contacts are electrically connected with each other, and only one electrical contact pairs in each connection line unit is connected with the light emitting diode chip; in each connection line unit, at least two first electrode contacts are arranged adjacent to each other, and at least two first electrode contacts are arranged between at least two second electrode contacts.

A semiconductor device includes a semiconductor stack, a reflective structure, and a conductive structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active region located between the first semiconductor structure and the second semiconductor structure. The reflective structure is located at a side of semiconductor stack closed to the first semiconductor structure, and includes a first metal. The conductive structure locates between the reflective structure and the first semiconductor structure, and includes a first region overlapping with the active structure and a second region which does not overlap with the active structure. The first metal in the second region has a concentration smaller than 5 atomic percent.

A display device includes a pixel, which includes at least one first light emitting element disposed between a first electrode and a second electrode; at least one second light emitting element disposed between a second electrode and a third electrode; at least one third light emitting element disposed between a third electrode and a fourth electrode; a first intermediate electrode disposed on the second electrode and electrically connected to the at least one first light emitting element and the at least one second light emitting element; and a second intermediate electrode disposed on the fourth electrode and electrically connected to the at least one third light emitting elements. The first intermediate electrode and the second intermediate electrode are electrically connected to each other.

A display device may include: a base layer including a plurality of islands, at least one first bridge configured to connect the islands in a first direction, and at least one second bridge configured to connect the islands in a second direction; and at least one pixel including a plurality of sub-pixels in the base layer. Each of the sub-pixels may include: a first electrode and a second electrode in one island of the islands and spaced from each other; a third electrode and a fourth electrode in one bridge of the at least one first bridge and the at least one second bridge and spaced from each other; at least one first light emitting element between the first electrode and the second electrode; and at least one second light emitting element between the third electrode and the fourth electrode.

A semiconductor light emitting element (10) includes flat plate-shaped translucent element substrate (11) with two main surfaces (11A, 11B) facing each other, light emitting semiconductor layer (12) formed on one main surface (11A) of element substrate (11) and in which n-type semiconductor layer (13), light emitting layer (14), and p-type semiconductor layer (15) are laminated, n-electrode (16) connected to n-type semiconductor layer (13) through at least one hole portion (12A) leading to n-type semiconductor layer (13) and provided on p-type semiconductor layer (15) being electrically separated from p-type semiconductor layer (15) by insulating film (18), first element electrode (19) electrically connected to n-electrode (16) and provided to extend in first direction, and second element electrode (20) electrically connected to p-type semiconductor layer (15) and provided to extend in first direction while being spaced apart from first element electrode (19), where thickness of element substrate (11) is 100 m or less.

A semiconductor device is provided, which includes an active region, a first semiconductor layer, a first metal element-containing structure, a first p-type or n-type layer, a second semiconductor layer and an insulating layer. The active region has a first surface and a second surface. The first semiconductor layer is at the first surface. The first metal element-containing structure covers the first semiconductor layer and comprising a first metal element. The first p-type or n-type layer is between the first semiconductor layer and the first metal element-containing structure. The second semiconductor layer is between the first semiconductor layer and the first p-type or n-type layer. The insulating layer covers a portion of the first semiconductor layer and a portion of the second semiconductor. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.

A display apparatus including a display substrate, light emitting devices disposed on the display substrate, circuit electrodes disposed between the light emitting devices and the display substrate, and a transparent layer covering the light emitting devices and the circuit electrodes, in which at least one of the light emitting devices includes a first LED sub-unit configured to emit light having a first wavelength, a second LED sub-unit adjacent to the first LED sub-unit and configured to emit light having a second wavelength, a third LED sub-unit adjacent to the second LED sub-unit and configured to emit light having a third wavelength, and a substrate disposed on the third LED sub-unit, in which a difference in refractive indices between the transparent layer and air is less than a difference in refractive indices between the substrate and a semiconductor layer of the third LED sub-unit.

A method for manufacturing a light emitting device can include providing a substrate, forming a first active layer including a first electrical polarity, forming a light emitting region, forming a second active layer including a second electrical polarity, and forming a first electrical contact layer. The light emitting region can emit light with a target wavelength between 200 nm and 300 nm. A plurality of mesas can be formed, where each mesa can include a portion of the first active layer, the light emitting region, the second active layer, and the first electrical contact layer. A mesa width of each mesa is smaller than twice a current spreading length of the light emitting device. In some cases, the current spreading length is from 400 nm to 5 microns. In some cases, a distance separating the mesas from 1 micron to 10 microns.

An array of semiconductor structures is grown on a hetero-interface barrier layer by forming successive semiconductor layers within holes formed through a dielectric layer deposited above the hetero-interface barrier layer. The hetero-interface forms a two dimensional charge carrier gas. Each semiconductor structure is grown within one of the holes and includes at least one LED active layer between an n-type semiconductor layer and a p-type semiconductor layer. The bottom one of the two semiconductor layers has the same conductivity type as the barrier layer on which it is formed. The hetero-interface is defined between the barrier layer and a buffer layer. The barrier layer and buffer layer can be formed from GaN, AlGaN, and/or InGaN of varying concentrations. The two dimensional charge carrier gas can be a 2D electron gas or a 2D hole gas.

A display device may include: a substrate including a display area and a non-display area; and at least one pixel disposed in the display area, and comprising at least one pixel including an emission area that emits light. The at least one pixel may include: at least one sub-electrode extending in a direction on the substrate; at least one branch electrode extending in a direction and spaced apart from the sub-electrode; a first insulating layer disposed on the at least one sub-electrode and the at least one branch electrode; first electrodes disposed on the first insulating layer and electrically connected with the at least one sub-electrode; second electrodes disposed on the first insulating layer and electrically connected with the at least one branch electrode; and at least one light emitting element aligned between at least one of the first electrodes and at least one of the second electrodes.