Patent classifications
H10H20/833
OPTICAL PANEL
An optical panel includes a first substrate, a second substrate, and a display medium layer. The first substrate includes a first carrier having active and peripheral areas, a first metal wire pattern extending from the peripheral area to a central portion of the active area, a first insulating layer, and a first transparent electrode. The first insulating layer is located on the first carrier and the first metal wire pattern and has a first through hole overlapping the central portion. A portion of the first metal wire pattern is located below the first through hole. The first transparent electrode overlaps the active area entirely and is electrically connected to the first metal wire pattern. The second substrate has a second carrier and a second transparent electrode overlapping the first transparent electrode. The display medium layer is located between the first transparent electrode and the second transparent electrode.
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A display device having a pad area and a display area is provided. The display device includes: a substrate; a pad structure on the substrate in the pad area; and a display element part on the substrate in the display area. The pad structure includes a first pad pattern, a second pad pattern on the first pad pattern, and a third pad pattern on the second pad pattern, and the display element part includes a light emitting element configured to emit light in a display direction. The second pad pattern has a first area and a second area, the second pad pattern and the third pad pattern do not contact each other in the first area, and the second pad pattern and the third pad pattern contact each other in the second area.
DISPLAY DEVICE INCLUDING ELECTRICALLY CONNECTED SENSOR ELECTRODE AND CONDUCTIVE LAYER
The display device includes a substrate, a display region arranged on the substrate and including a plurality of pixels, a first wiring provided on the substrate, an insulating layer overlapping a portion of the first wiring, an oxide conductive layer provided on the first wiring and electrically connected to the first wiring, a sealing layer overlapping the display region and at least an end of the oxide conductive layer and sealing the plurality of pixels, a sensor electrode provided on the sealing layer and overlapping the display region, and a second wiring passing over the at least end of the oxide conductive layer provided with the sealing layer and electrically connecting the sensor electrode and the oxide conductive layer.
LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE
There is provided a light emitting device (10) including a plurality of pixels (20) arranged on a substrate, in which a pixel of the plurality of pixels includes a plurality of subpixels (100), at least one subpixel of the plurality of subpixels includes a plurality of light emitting elements (200), each light emitting element includes: a first electrode (202) provided on the substrate (300); a light emitting layer (204) that is laminated on the first electrode and emits light; a second electrode (206) that is laminated on the light emitting layer and transmits light from the light emitting layer; and a first protective film (208) that is laminated on the second electrode and transmits light from the light emitting layer, and a second protective film (210) constituting an interface for guiding the light immediately above the light emitting element is embedded between the light emitting elements adjacent.
Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.
Light Emitting Diode and Fabrication Method Thereof
A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.
DISPLAY PANEL, PREPARATION METHOD THEREFOR, AND DISPLAY APPARATUS
This application provides a display panel, a preparation method therefor, and a display apparatus. A first display region of the display panel has an OLED pixel, a second display region has a Micro LED pixel, the Micro LED pixel has a light emitting region and a light transmission region, and a camera is disposed below the second display region. After the Micro LED pixel is used in the second display region, display pixels having a same area in the first display region and the second display region can be designed, to implement display effect consistency between the first display region and the second display region. Because a size of the Micro LED pixel for light emitting is small, it can be ensured that the Micro LED pixel has a large light transmission region, so that light transmittance of the second display region can be improved.
DISPLAY BASE PLATE AND PREPARATION METHOD THEREOF AND DISPLAY APPARATUS
Provided are a display base plate and a preparation method thereof and a display apparatus, belonging to the technical field of display devices. The display base plate comprises a substrate, and a light-emitting diode and a driving circuit which are patterned and arranged on one side of the substrate, and the light-emitting diode comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked; and the driving circuit is respectively connected with the first semiconductor layer and the second semiconductor layer, and is used for driving the light-emitting diode to emit light. By the display base plate and the preparation method thereof and the display apparatus provided by the embodiment of the application, the difficulty of integrating the driving circuit and the light-emitting diode in the display base plate can be reduced, so that a preparation process of the display base plate is simpler.
Light emitting diode and manufacturing method therefor
Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride or an indium tin oxide; and the electrode layer is located on the second-type layer.
Physical Forms of MXene Materials Exhibiting Novel Electrical And Optical Characteristics
The present invention(s) is directed to novel conductive M.sub.n+1X.sub.n(T.sub.s) compositions exhibiting high volumetric capacitances, and methods of making the same. The present invention(s) is also directed to novel conductive M.sub.n+1X.sub.n(T.sub.s) compositions, methods of preparing transparent conductors using these materials, and products derived from these methods.