A display device includes an array substrate, light emitting elements and light shielding units. The light emitting elements are disposed on the array substrate and electrically connected to the array substrate, where each of the light emitting elements has a first surface and a second surface opposite to the first surface. The second surfaces face the array substrate. The light shielding units are disposed on the array substrate and arranged alternately with the light emitting elements, where the light shielding units expose the first surfaces, and each of the light shielding units has a top and a bottom opposite to the top. The bottoms face the array substrate, and a cavity is existed between the bottoms and the array substrate.

Disclosed are an antioxidant, a backlight module and a manufacturing method thereof. The antioxidant includes a film-forming component and a volatilization-suppressing additive. The film-forming component includes at least one of a substituted or unsubstituted acrylic resin, isopropanolamine, and imidazoline, and a boiling point of the volatilization-suppressing additive is greater than that of the film-forming component.

A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

The display device includes a substrate, a display region arranged on the substrate and including a plurality of pixels, a first wiring provided on the substrate, an insulating layer overlapping a portion of the first wiring, an oxide conductive layer provided on the first wiring and electrically connected to the first wiring, a sealing layer overlapping the display region and at least an end of the oxide conductive layer and sealing the plurality of pixels, a sensor electrode provided on the sealing layer and overlapping the display region, and a second wiring passing over the at least end of the oxide conductive layer provided with the sealing layer and electrically connecting the sensor electrode and the oxide conductive layer.

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

A display device comprises a display area, a non-display area surrounding the display area, pixels disposed in the display area of the substrate, each of the pixels including a first electrode, a second electrode, and light-emitting elements electrically connected to the first electrode and the second electrode, and a first voltage wiring disposed in the display area and the non-display area, the first voltage wiring electrically connected to at least some of the pixels. The first voltage wiring includes a first separation wiring disposed in the non-display area, and a second separation wiring disposed in the non-display area and spaced apart from the first separation wiring.

A method for manufacturing an LED structure includes forming a first semiconductor layer on a first substrate; performing a first implantation operation to form a first implanted region and a first non-implanted region in a second doping semiconductor layer of the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; performing a second implantation operation to form a second implanted region and a second non-implanted region in a fourth doping semiconductor layer of the second semiconductor layer; performing a first etch operation to remove a portion of the second semiconductor layer and expose at least the first non-implanted region; performing a second etch operation to expose a plurality of contacts of a driving circuit formed in the first substrate; and electrically connecting the first non-implanted region and the second non-implanted region with the plurality of contacts.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LED chips are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric materials may form dielectric and/or passivation layers between various chip structures, such as between active LED structures and internal reflective layers and/or electrical contacts. Internally converted light propagating within LED chips may pass back through active LED structures with reduced light absorption.

A semiconductor device includes a semiconductor stack, a reflective structure, and a conductive structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active region located between the first semiconductor structure and the second semiconductor structure. The reflective structure is located at a side of semiconductor stack closed to the first semiconductor structure, and includes a first metal. The conductive structure locates between the reflective structure and the first semiconductor structure, and includes a first region overlapping with the active structure and a second region which does not overlap with the active structure. The first metal in the second region has a concentration smaller than 5 atomic percent.

A tiled display device includes a first display device including a first pixel, and a second display device coupled to the first display device in a bonding area, including a second pixel, and overlapping the first display device in the bonding area in a plane view.