A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The active region is located between the first semiconductor structure and the second semiconductor structure. The active region includes a light-emitting region having N pair(s) of semiconductor stack(s). Each of the semiconductor stack includes a well layer and a barrier layer, in which N is a positive integer greater than or equal to 1. The well layer includes a first group III-V semiconductor material including indium with a first percentage of indium content. The barrier layer includes a second group III-V semiconductor material including indium with a second percentage of indium content. The first group III-V semiconductor material and the second group III-V semiconductor material further includes phosphorus. The second percentage of indium content is less than the first percentage of indium content.

The present disclosure provides an optoelectronic semiconductor chip including a semiconductor layer sequence with an active layer for generating primary radiation and an angle-selective filter on a first side of the semiconductor layer sequence. During operation, the semiconductor chip emits radiation in the UV range. The angle-selective filter is configured to let pass only radiation that hits the filter in a predefined angular range.

A light-emitting diode (LED) structure includes an active region that has at least one aluminum-containing quantum well (QW) stack that emits light from the LED structure when activated. The LED structure exhibits a modified internal quantum efficiency value, which is higher than a LED structure that does not include aluminum within a QW stack. The LED structure also exhibits a modified peak wavelength, which is longer than an unmodified peak wavelength of the unmodified LED structure.

This semiconductor light emitting device includes an emission layer, a passivation layer on the emission layer, and a first adhesive layer on the passivation layer. The passivation layer may include a plurality of grooves, and the first adhesive layer may be disposed in each of the plurality of grooves. Arranging the first adhesive layer in the plurality of grooves may enhance fixability. The display device includes a plurality of semiconductor light emitting devices. The semiconductor light emitting devices may include a horizontal semiconductor light emitting device, a flip chip semiconductor light emitting device, or a vertical semiconductor light emitting device.

Disclosed is a Light-Emitting Device-Thin Film Transistor (LED-TFT) integration structure, comprising a substrate comprising a light emitting area and a driving area; a metal reflective film formed on the substrate; a buffer layer formed on the metal reflective film; LED disposed in the light emitting area; a protective layer formed on the LED; a thin film transistor disposed in the driving area and configured to drive the LED; and an ohmic contact metal for electrically connecting a cathode of the LED with the metal reflective film, wherein the LED and the thin film transistor are integrally formed on the substrate.

Provided are a display base plate and a preparation method thereof and a display apparatus, belonging to the technical field of display devices. The display base plate comprises a substrate, and a light-emitting diode and a driving circuit which are patterned and arranged on one side of the substrate, and the light-emitting diode comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked; and the driving circuit is respectively connected with the first semiconductor layer and the second semiconductor layer, and is used for driving the light-emitting diode to emit light. By the display base plate and the preparation method thereof and the display apparatus provided by the embodiment of the application, the difficulty of integrating the driving circuit and the light-emitting diode in the display base plate can be reduced, so that a preparation process of the display base plate is simpler.

A wiring substrate, a manufacturing method thereof, a light-emitting panel, and a display device are disclosed. The wiring substrate includes: a base substrate (11); and a plurality of metal traces (50) and an organic insulating layer (13), which are located at one side of the base substrate. The metal traces (50) each comprise a first metal layer (141) and a second metal layer (151), which are stacked; the first metal layer (141) is located between the second metal layer (151) and the base substrate (11); an angle between a side wall of the second metal layer (151) and the base substrate (11) is greater than or equal to 90; the area of a contact face between each of the metal traces (50) and the base substrate (11) is greater than or equal to the area of the surface of the second metal layer (151) opposite the first metal layer (141).

A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from an edge of the second type conductive layer. An edge of the light emitting layer is aligned with an edge of the first type conductive layer. The edge of the first type conductive layer extends along the horizontal level away from the edge of the second type conductive layer.

A semiconductor light emitting device includes a light emitting layer, a first electrode on a lower side of the light emitting layer, a second electrode on an upper side of the light emitting layer, an insulating layer on a side portion of the light emitting layer and overlapping at least a portion of the first electrode and overlapping at least a portion of the second electrode and a plurality of metal layers spaced apart from each other in the insulating layer, the plurality of metal layers including a first metal layer including a reflective layer and a second metal layer including a magnetic layer.

A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAl.sub.xN.sub.y material at least partially contiguous with the semiconductor structure. The TiAl.sub.xN.sub.y material can be TiAl.sub.3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAl.sub.xN.sub.y material, such that the TiAl.sub.xN.sub.y material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.