An embodiment provides a semiconductor device package and a light emitting device comprising same, the semiconductor device package comprising: a body including a first cavity; and a semiconductor device disposed within the first cavity, wherein: the first cavity includes a first surface inclined such that the area of the cavity gradually increases as going away from the semiconductor device, and a plurality of second surfaces perpendicular to the upper surface of the semiconductor device; the body includes a first outer surface and a third outer surface that are opposite to each other, a second outer surface and a fourth surface that are opposite to each other, a first corner portion disposed in a region where the first and second outer surfaces meet each other, a second corner portion disposed in a region where the second and third outer surfaces meet each other, a third corner portion disposed in a region where the third and fourth outer surfaces meet each other, and a fourth corner portion disposed in a region where the fourth and first outer surfaces meet each other; and the plurality of second surfaces are disposed between the first and second corner portions, between the second and third corner portions, between the third and fourth corner portions, and between the fourth and first corner portions, respectively.

A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

Provided is a lighting device, comprising: a light source module comprising: at least one light source disposed on a printed circuit board; and a resin layer disposed on the printed circuit board so that the light source is embedded; a light reflection member formed on at least any one of one side surface and another side surface of the resin layer; and a diffusion plate having an upper surface formed on the light source module, and a side wall which is integrally formed with the upper surface and formed to extend in a lower side direction and which is adhered onto the light reflection member, wherein a first separated space is formed between the light source module and the upper surface of the diffusion plate, whereby flexibility of the product itself can be secured, and durability and reliability of the product can be also improved.

In an embodiment a method for producing optoelectronic semiconductor devices includes providing at least one optoelectronic semiconductor chip with at least one contact side, generating at least one coating region and at least one protection region on the contact side or on at least one of the contact sides, applying at least one liquid coating material to the at least one contact side, wherein the at least one coating material wets the at least one coating region and does not wet the at least one protection region and solidifying the at least one coating material into at least one electrical contact structure on the at least one coating region such that the semiconductor chip is capable of being energized through the at least one contact structure.

Disclosed herein is a lead frame assembly including a frame and lead frame units each including a chip holder having first and second electrode pads; and a pin unit having a first pin, a second pin and third pins each extending from the chip holder. The pin unit extending from one of the lead frame units is connected to the pin unit of the adjacent one of the lead frame units. For the lead frame units disposed adjacent to the frame, the pin units extending towards the frame are connected to the frame such that the lead frame units are fixedly positioned within the frame. A chip packaging device including a lead frame body and a packaging structure is also disclosed.

A semiconductor optical device, in which a light emitting region and a modulator region are integrated, includes a first mesa disposed in the light emitting region, protruding in a direction that intersects a light propagation direction, and including an active layer, first and second buried layers disposed on the first mesa in a direction that intersects the light propagation direction and sequentially stacked in a direction in which the first mesa protrudes, a first semiconductor layer disposed on the first mesa and the second buried layer, a second mesa disposed in the modulator region and including a light absorption layer, and a third buried layer disposed on the second mesa. The first semiconductor layer and the first buried layer each have a first conductivity type. The second buried layer has a second conductivity type different from the first conductivity type, and the third buried layer is a semi-insulating semiconductor layer.

A radiation-emitting component is specified witha carrier which has a top surface a radiation-emitting semiconductor chip arranged on the top surface of the carrier and configured to generate primary electromagnetic radiation, a first reflector layer arranged above a top surface of the semiconductor chip, and a cover body arranged between the first reflector layer and the radiation-emitting semiconductor chip, wherein a side surface of the cover body is inclined to the top surface of the carrier. Furthermore, a method for producing such a radiation-emitting component is specified.

A light emitting device includes: a resin package including: a resin part, and a plurality of leads including a first lead and a second lead, wherein the resin package has a concave portion having a bottom face at which a part of an upper surface of the first lead and a part of an upper surface of the second lead are exposed from the resin part; a light emitting element mounted on the bottom face of the concave portion; and a sealing member covering the light emitting element in the concave portion. The plurality of leads comprise a plurality of notch parts including a first notch part on a first side corresponding to a first outer side surface of the resin package and a second notch part on a second side corresponding to a second outer side surface of the resin package.

A light emitting device includes: a base substrate; a plurality of unit regions provided on the base substrate; a barrier disposed at a boundary of the unit regions to surround each of the unit regions; a dam disposed in each of the unit regions to be spaced apart from the barrier; a first electrode provided in each of unit light emitting regions surrounded by the dam; a second electrode disposed in each of the unit light emitting regions, the second electrode of which at least one region is provided opposite to the first electrode; and one or more LEDs provided in each of the unit light emitting regions, the one or more LEDs being electrically connected between the first electrode and the second electrode.

A light emitting diode package includes a body part having a cavity at the upper part thereof and having a long shape in one direction; and a first lead frame and a second lead frame which are coupled to the bottom of the body part and spaced apart from each other in a transverse direction. The first lead frame includes a first mounting part exposed in the cavity; a first terminal part exposed to one side surface of the body part; and a first connection part exposed to the lower surface of the body part. The second lead frame includes a second mounting part exposed in the cavity; a second terminal part exposed to the other side surface of the body part along a one-side direction; and a second connection part exposed to the lower surface of the body part.