H10H20/8502

Optoelectronic component and method for manufacturing an optoelectronic component
12284847 · 2025-04-22 · ·

In an embodiment an optoelectronic component includes a carrier with a mounting area, an optoelectronic semiconductor chip, a dielectric protective layer and a dielectric encapsulation, wherein the protective layer is directly located at the mounting area in a chip mounting region, wherein the semiconductor chip is located at the protective layer in the chip mounting region and is electrically conductively connected with the carrier, wherein the encapsulation is directly located at the mounting area in a region adjacent to the chip mounting region and is directly located at the protective layer in an overlap region, and wherein the encapsulation is arranged exclusively in the region adjacent to the semiconductor chip.

COMPOSITION, METHOD FOR CONNECTING A CARRIER AND AN ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE
20250194313 · 2025-06-12 ·

In an embodiment a composition includes a solder material, a photoresist and a flux, wherein the solder material is present in form of particles, wherein at least a part of the particles have a different diameter, and wherein the diameter differs by at least one power of ten.

MOUNTING STRUCTURE AND SEMICONDUCTOR COMPONENT
20250212565 · 2025-06-26 · ·

Provided is a mounting structure and a semiconductor component that have a structure capable of suppressing creeping up of a bonding material. The mounting structure according to the present disclosure includes a carrier including a first surface having a first wettability with respect to a bonding material, and a conductor layer being provided on the first surface and having a second wettability higher than the first wettability with respect to the bonding material. The conductor layer includes a first region having at least four sides, and two or more second regions spaced apart from each other along a first side of the at least four sides.

EPITAXIAL DIE ENABLING EASY DETECTION OF ELECTRICAL DEFECTS, SEMICONDUCTOR LIGHT-EMITTING DEVICE USING SAME, AND MANUFACTURING METHODS THEREOF

The present invention relates to: an epitaxial die having a structure enabling easy detection of electrical defects in an epitaxial die before an upper wiring process and easy replacement of a defective epitaxial die; a semiconductor light-emitting device using same; and manufacturing methods thereof.

LAMP BEAD STRUCTURE

The present disclosure provides a lamp bead structure, comprising a bracket, a light-emitting chip and a packaging member are on the bracket, the light-emitting chip is mounted on the bracket. The bracket includes a first metal plate and a second metal plate, and there is a mounting gap between the first and second metal plates. One end of the packaging member is connected to the first metal plate, the other end passes through the packaging member to connect with the second metal plate, and the packaging member is connected to the light-emitting chip. The light emitted by the light-emitting chip will diffuse at the packaging member to achieve 3600 luminescence, avoiding the problem that the light of the light-emitting chip can only emit forward with no light at the back side, thereby enabling the lamp bead structure to better adapt to various application scenarios and enhancing its utilization ratio.

LIGHT-EMITTING DEVICE

A light-emitting device includes: a first light-emitting unit with a chromaticity coordinate x ranging from 0.53 to 0.6, and a chromaticity point located proximate to a blackbody radiation curve; a second light-emitting unit with a chromaticity coordinate x ranging from 0.4 to 0.48, and a chromaticity point located above the blackbody radiation curve; and a third light-emitting unit with a chromaticity coordinate x ranging from 0.18 to 0.24, and a chromaticity point located above the blackbody radiation curve. An area surrounded by the chromaticity points of the first light-emitting unit, the second light-emitting unit and the third light-emitting unit covers an area on the blackbody radiation curve with a CCT range of 1800 K to 10000 K, which can achieve a wide-range CCT tuning, and make CIExy coordinates fit the blackbody radiation curve to tune a product during the tuning process.

LONG-PASS FILTER STRUCTURES FOR LIGHT-EMITTING DIODES
20250362438 · 2025-11-27 ·

Solid-state lighting devices and more particularly long pass filter structures for light-emitting diodes are disclosed. LED packages are disclosed that include one or more LED chips, lumiphoric materials, and integrated filter structures for reducing emissions below certain wavelengths, for example emissions that may have adverse effects on normal wildlife behavior, such as nesting sea turtles and/or newly-hatched sea turtles. Exemplary filter structures are disclosed with specific arrangements for preferentially reflecting undesired wavelengths, such as those of the one or more LED chips, while preferentially transmitting intended wavelengths, such as wavelength-converted wavelengths from lumiphoric materials. Exemplary filter structures include various layers with various tailored optical thicknesses for light entrance, middle, and light exit portions of filter structures.

LENS STRUCTURES FOR LIGHT-EMITTING DIODE (LED) CHIPS IN LED PACKAGES

Light-emitting diode (LED) devices and more particularly lens structures for LED chips in LED packages are disclosed. Lens structures include complex shapes for achieving various emission patterns in LED packages. Complex lens shapes include arrangements of multiple lenses within a same LED package. A first lens is arranged on an LED chip with a self-forming shape, followed by a second lens that encapsulates the first lens. The self-forming shape of the first lens provides the ability to have lens widths that taper inward and depressions positioned relative to the underlying LED chip. Combinations of shapes for the first and second lenses may be configured to collectively provide tailored light emission profiles in corresponding LED packages.

LENS STRUCTURES IN LIGHT-EMITTING DIODE PACKAGES

Light-emitting diode (LED) devices and more particularly lens structures in LED packages are disclosed. Lens structures include complex shapes for achieving various emission patterns in LED packages. Complex lens shapes include lens widths that are greater than corresponding widths of support elements, including lead frame structures or submount structures. Complex lens shapes further include inward depressions positioned relative to underlying LED chips for directing peak emission intensities off center relative to LED packages. Exemplary LED packages further include encapsulant layers positioned between lenses and underlying LED chips for providing one or more of improved surfaces for lens formation and improved adhesion.

LIGHT EMITTING DEVICE AND DISPLAY DEVICE

This light emitting device comprises: a base; at least one first light emitting element that is disposed on the base and emits light from an upper surface and a lateral surface thereof; a reflective member disposed in a vicinity of the at least one first light emitting element; and a lens that overlaps the at least one first light emitting element in a top view, wherein a shape of the lens in the top view is an elliptical shape having a major axis in an x direction and a minor axis in a y direction orthogonal to the x direction, and, regarding a region of the reflective member overlapping the lens, an area size of a portion of the region on the y direction side of the major axis is larger than an area size of a portion of the region present on the +y direction side of the major axis in the top view.