A chip structure and a method for manufacturing the same, and a display apparatus. The chip structure includes a chip wafer unit and a color conversion unit disposed on a light exit side of the chip wafer unit. The color conversion unit includes a base substrate; the base substrate includes a body portion and an edge portion surrounding the body portion; the edge portion includes original layers and modified layers alternately arranged along a first direction; and in the edge portion, layers located on outermost two sides in the first direction are both original layers, the first direction being perpendicular to a surface of the base substrate away from the chip wafer unit. A light reflectivity of the original layers and a light reflectivity of the modified layers are different.

A method of manufacturing a semiconductor element unit, including: joining a semiconductor element to an electrode of a first substrate, the first substrate having a first sacrificial layer and the electrode formed on the first sacrificial layer; causing eutectic bonding between the semiconductor element and the electrode by an annealing process, after the semiconductor element is joined to the electrode, to form a semiconductor element unit; and separating the semiconductor element unit by removing the first sacrificial layer after the semiconductor element and the electrode are connected by eutectic bonding.

The present disclosure provides a lamp bead structure, comprising a bracket, a light-emitting chip and a packaging member are on the bracket, the light-emitting chip is mounted on the bracket. The bracket includes a first metal plate and a second metal plate, and there is a mounting gap between the first and second metal plates. One end of the packaging member is connected to the first metal plate, the other end passes through the packaging member to connect with the second metal plate, and the packaging member is connected to the light-emitting chip. The light emitted by the light-emitting chip will diffuse at the packaging member to achieve 3600 luminescence, avoiding the problem that the light of the light-emitting chip can only emit forward with no light at the back side, thereby enabling the lamp bead structure to better adapt to various application scenarios and enhancing its utilization ratio.

Solid-state lighting devices and more particularly long pass filter structures for light-emitting diodes are disclosed. LED packages are disclosed that include one or more LED chips, lumiphoric materials, and integrated filter structures for reducing emissions below certain wavelengths, for example emissions that may have adverse effects on normal wildlife behavior, such as nesting sea turtles and/or newly-hatched sea turtles. Exemplary filter structures are disclosed with specific arrangements for preferentially reflecting undesired wavelengths, such as those of the one or more LED chips, while preferentially transmitting intended wavelengths, such as wavelength-converted wavelengths from lumiphoric materials. Exemplary filter structures include various layers with various tailored optical thicknesses for light entrance, middle, and light exit portions of filter structures.

A chip-scale package type light emitting diode is provided. In the light emitting diode according to one embodiment, an opening exposing a pad metal layer is separated from an opening of a lower insulation layer which exposes an ohmic reflection layer formed on a mesa. Therefore, it is possible to prevent solder, particularly Sn, from diffusing and contaminating the ohmic reflection layer.

A device is provided. The device includes a converter layer and a filter. The converter layer includes a light emitting surface and an opposite side of the light emitting surface. The filter is deposited on the opposite side. The filter influences a radiation profile to increase a coupling efficiency of a pump radiation into the converter layer.

A method of manufacturing a light-emitting diode device comprises fabricating a light-emitting diode structure comprising an inorganic semiconductor; and fabricating an optic over the light-emitting diode structure using nano-imprint lithography. The method may further comprise, before fabricating the optic, forming a first lens on the light-emitting diode structure by thermal reflow lithography. The optic and first lens may improve the efficiency of the light-emitting diode device by reducing losses due to total internal reflection. Also provided are light emitting diode devices obtainable by the method.

A semiconductor light emitting device is provided which has high reliability of a bonded surface despite having a structure in which a submount substrate on which a light emitting element is mounted is ultrasonically bonded to a metal substrate. The semiconductor light emitting device includes a light emitting element, a submount substrate formed of ceramic on which the light emitting element is mounted, and a mount substrate formed of metal on which the submount substrate is mounted. The submount substrate includes a metal layer on a bonded surface with the mount substrate. The metal layer of the submount substrate is directly bonded to the mount substrate without involving a bonding material. Voids are contained in the bonded surface. A content ratio of voids is greater in a central region within a main plane of the bonded surface than in a peripheral region.

Provided are an LED pixel unit, a display panel, a display screen, and a light emitting device. The LED pixel unit includes multiple Micro-LEDs with different light-emitting wavelengths, arranged on a circumferential line with a point A as a center and R as a radius; multiple Micro-LEDs are provided with light-emitting surfaces with a same orientation, respectively; a first end of each of the multiple Micro-LEDs facing toward the point A is configured to receive one of a positive driving voltage or a negative driving voltage, and a second end of each of the multiple Micro-LEDs facing away from the point A is configured to receive the other of the positive driving voltage or the negative driving voltage.

Light-emitting diode (LED) devices and more particularly coefficient of thermal expansion (CTE) structures in submounts of LEDs are disclosed. Thermal expansion structures include arrangements of vias within submounts that provide variable CTE values across submount surfaces and/or within thicknesses of submounts. Vias may comprise air-filled vias and/or vias filled with various materials that provide variable CTE values. Vias may further be formed with variable thicknesses within submounts to further tailor CTE values. Submounts may include flexible submounts adept for mounting to irregular surfaces with vias structure to provide CTE compensation. Further aspects are described in the context of chip-scale packaging.