A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 m or more and 0.01 m or less.

A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

In an embodiment a method for producing an optoelectronic assembly includes providing at least one component of the optoelectronic assembly, providing a source carrier with a functional material on a lower face of the source carrier facing the at least one component, detaching a part of the functional material by irradiation via a laser beam through an upper face of the source carrier facing away from the at least one component, attaching the detached part of the functional material to a side of the at least one component facing the source carrier and completing the optoelectronic assembly, wherein the source carrier comprises cavities, each cavity being filled with the functional material.

A light-emitting device includes a first lead electrode and a second lead electrode, and a resin frame that covers an outer portion and a separation portion of the lead electrodes and has an opening portion that exposes the lead electrodes, and an LED. A protrusion provided in the first lead electrode is fitted into an enclosing portion provided in the second lead electrode to form a nested structure. Hollowed portions are provided in facing adjacent sides of the protrusion and the enclosing portion, and a region surrounded by the hollowed portion and the hollowed portion is filled with a part of a resin, thereby forming an anchor column.

A light emitting module includes: a light source; and an optical member configured to control a distribution of light emitted from the light source. The optical member comprises an incident face on which the light from the light source is incident, and an output face through which the light incident on the incident face exits. In a plan view: the optical member is shaped to have a long axis and a short axis orthogonal to the long axis, and a central axis of the optical member passes through a center of the light source, a center of the incident face, and a center of the output face, while being orthogonal to a long axis direction parallel to the long axis and a short axis direction parallel to the short axis.

Light-emitting diode (LED) packages and more particularly a light collector for light mixing in LED packages to improve the far field emission pattern (FFP) of the LED packages are disclosed. The LED package can include one or more LED chips with different wavelength ranges, and the light collector placed over the LED chips can have a reflective surface, save for a reduced aperture through which the light from the LED chips can be emitted after mixing in the light collector. The LED package can also include a lens to further improve the FFP. In an embodiment, the light collector can include diffuser material to facilitate the mixing of the light within the light collector. The LED package with the light collector mixes multiple emission point sources into a single point source, or reduced-area source, that considerably improves the FFP of multi-colored LED chips of the LED package.

A semiconductor light-emitting apparatus includes: a package substrate; a semiconductor light-emitting element flip-chip bonded on the package substrate; a frame body provided around the semiconductor light-emitting element on the package substrate; and a sealing member that covers the semiconductor light-emitting element on the package substrate, covers an upper surface of the frame body, and has translucency at an emission wavelength of the semiconductor light-emitting element. A height of the upper surface of the frame body is smaller than a height ha of an upper surface of the semiconductor light-emitting element.

Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.

A unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, and an optical layer disposed between the light emitting devices and the transparent substrate and transmitting light emitted from the light emitting devices. The transparent substrate has a concavo-convex pattern on a surface facing the light emitting devices.