Light-emitting devices and methods for making light-emitting devices. A light-emitting device includes a high-field electrode, a collector electrode, and a light generating region. The collector electrode is operatively coupled to one side of the light generating region, and the high-field electrode is operatively coupled to another side of the light generating region opposite the collector electrode. The high-field electrode includes protruding electrode elements that extend into the light generating region and toward the collector electrode. The protruding electrode elements accelerate carriers in the light generating region in response to a voltage being applied between the high-field electrode and the collector electrode. The carriers have sufficient kinetic energy to create electron-hole pairs in the light generating region through impact ionization. When these electron-hole pairs recombine, at least a portion of the recombination events emit a photon with an energy corresponding to the bandgap of the light generating region.

Solid-state lighting devices, and more particularly, wire grid polarization structure for current spreading and polarization control for light emitting diode (LED) package, and a method for making the same are disclosed. The wire grid polarization structure can be configured to both polarize light emitted by an LED chip of the LED package as well as spread current on a layer of the LED chip, resulting in more even light emission across the LED chip. The wire grid polarization structure can be formed on a top surface of the LED chip, and be electrically coupled to an electrode to spread the current across the top surface of the LED chip. In an embodiment, the wire grid polarization structure can include interdigitated fingers that are coupled to both an anode and an electrode.

A light-emitting element includes: a light emitter including a first type semiconductor portion having a first side surface and first type conductivity, an active portion positioned below the first type semiconductor portion, and a second type semiconductor portion having second type conductivity and reaching laterally the first type semiconductor portion from below the active portion; (ii) a conductive bonding material; and (iii) a support body positioned below the light emitter and supporting the light emitter via the conductive bonding material and thus the first type semiconductor portion is positioned higher than the active portion.

A mounting substrate includes a ceramic substrate having two or more through holes, metal members disposed in respective through holes, and a bonding material disposed between the ceramic substrate and each of the metal members in the through holes. A portion of an upper surface, a portion of a lower surface, and a portion of lateral surfaces of each of the metal members are exposed through the ceramic substrate. The portion of the lateral surfaces and the portion of the lower surface of each of the metal members, exposed through the ceramic substrate, are continuous with each other. The portion of the lateral surfaces of each of the metal members, exposed through the ceramic substrate, is coplanar with a lateral surface of the ceramic substrate. The ceramic substrate is disposed so as to surround an outer periphery of each of the metal members in a top view.

A light emitting element includes: a first light emitting part including: a first nitride semiconductor layer containing a first conductivity type impurity, a second nitride semiconductor layer containing a second conductivity type impurity, and a first active layer positioned between the first nitride semiconductor layer and the second nitride semiconductor layer; a second light emitting part positioned above the second nitride semiconductor layer, the second light emitting part including: a third nitride semiconductor layer, a fourth nitride semiconductor layer containing a second conductivity type impurity, and a second active layer positioned between the third nitride semiconductor layer and the fourth nitride semiconductor layer. The third nitride semiconductor layer includes: a first layer that contains at least one selected from the group consisting of Be, Mg, Ca, Fe, Zn, and C, a second layer, and a third layer.

A flash heating part including multiple flash lamps is provided over a chamber for receiving a semiconductor wafer therein, and an auxiliary heating part is provided under the chamber. The auxiliary heating part is provided with multiple chips each including a semiconductor light emitting element. A pattern of an electrically conductive material is formed on a substrate made of aluminum nitride, and a plating layer of gold is formed on the pattern. A connection surface of each of the chips faces downward, and electrodes provided on the lower surface thereof are connected to electrodes on the pattern side by bumps. The bumps are hidden behind the chips as seen from the flash lamps, and are prevented from being damaged by flash irradiation.

The present disclosure provides a light-emitting chip, a light-emitting device and a display apparatus. The light-emitting chip includes a pixel circuit layer, a light-emitting unit group located on a side of the pixel circuit layer, and a plurality of conductive pads located on a side of the pixel circuit layer facing away from the light-emitting unit. The pixel circuit layer includes at least a part of the structure of the pixel circuit and a plurality of signal lines. The light-emitting unit group includes at least one light-emitting unit, the light-emitting unit is electrically connected with the pixel circuit. One of the conductive pads is electrically connected with one of the signal lines. The light-emitting device includes the plurality of light-emitting chips and the second drive circuit, the plurality of conductive pads are connected with the second drive circuit. The display apparatus includes a light-emitting device.

A method for manufacturing a ceramic substrate including forming a through hole or a recessed portion in a ceramic plate containing aluminum nitride and having a first surface and a second surface opposite to the first surface by irradiating the ceramic plate with a laser so that aluminum is precipitated, removing the aluminum precipitated on an inner surface of the through hole or the recessed portion, and disposing a conductive paste inside the through hole or the recessed portion.

A display module includes: a substrate including a mounting surface on which a plurality of inorganic light-emitting diodes emitting light in a first direction are mounted, a side surface, and a rear surface being opposite to the mounting surface; a front cover bonded with the mounting surface and covering the mounting surface in the first direction; a metal plate bonded with the rear surface; a side cover surrounding the side surface; and a side end member covering at least one portion of the side cover and extending in a second direction being orthogonal to the first direction along the side surface, wherein the side end member includes a body extending in the second direction, and a plurality of ribs extending from the body in the first direction and arranged at intervals along the second direction.

In an embodiment a device includes a carrier substrate with a first contact region and therefrom electrically insulated a second contact region, a light-emitting component arranged on the carrier substrate and electrically coupled to the first and second contact regions, a reflective encapsulation arranged on the carrier substrate, wherein the reflective encapsulation surrounds the light-emitting component and forms a cavity above a light-emitting surface of the light-emitting component, and a light conversion layer arranged directly on the light-emitting component in the cavity, wherein the light-emitting surface is smaller than a top surface of the light-emitting component, wherein the light conversion layer is substantially congruent with the light-emitting surface, wherein the cavity has a bottom lying in the same plane as the light-emitting surface, and wherein the cavity has side surfaces which are arranged at least partially at a distance from the light conversion layer so that a gap exists between the light conversion layer and the reflective encapsulation.