An example electronic device including a semiconductor die and a mold compound overlying the die, and the mold compound is chemically altered to attenuate electromagnetic radiation within a range of wavelengths or frequencies.

A display device having a wide color gamut includes a backplane, a light emitting group, a protective layer, and a color conversion structure. The light emitting group is disposed on the backplane, and includes a plurality of blue light emitting elements arranged at intervals. The protective layer encapsulates the blue light emitting elements in a lateral direction to expose their light emitting surfaces. The color conversion structure is disposed on the light emitting group to convert light from one portion of the blue light emitting elements into red light and green light and allow light from another one portion of the blue light emitting elements to pass through. The protective layer has a transmittance of 10% or less of light having a wavelength greater than 380 nm and less than 500 nm.

An oxide fluorescent material has a composition represented by the following formula (1).

(Mg.sub.1-sM.sup.1.sub.s).sub.2(Al.sub.1-tM.sup.2.sub.t).sub.u(Ge.sub.1-vM.sup.3.sub.v).sub.wO.sub.x:Cr.sub.y,M.sup.4.sub.z(1) wherein M.sup.1 represents at least one element selected from the group consisting of Ca, Sr, Ba, and Zn; M.sup.2 represents at least one element selected from the group consisting of Ga, Sc, and In; M.sup.3 represents at least one element selected from the group consisting of Si, Ti, Zr, Sn, and Hf; M.sup.4 represents at least one element selected from the group consisting of Ni, Ce, Eu, Fe, Mn, Nd, Tm, Ho, Er, and Yb; and s, t, u, v, w, x, y, and z satisfy 0s1.0, 0t1.0, 1.5u2.5, 0v0.5, 3.0w6.0, 11.0x17.0, 0.005y1.0, and 0z0.5.

An oxide fluorescent material has a composition represented by the following formula (1):

(Mg.sub.1-pM.sup.1.sub.p).sub.q(Li.sub.1-rM.sup.2.sub.r).sub.s(In.sub.1-tM.sup.3.sub.t).sub.u(Ge.sub.1-vM.sup.4.sub.v).sub.wOx:Cr.sub.y,M.sup.5.sub.z(1) wherein M.sup.1 represents at least one element selected from the group consisting of Ca, Sr, Ba, and Zn; M.sup.2 represents at least one element selected from the group consisting of Na, K, Rb, and Cs; M.sup.3 represents at least one element selected from the group consisting of Al, Ga, and Sc; M.sup.4 represents at least one element selected from the group consisting of Si, Ti, Zr, Sn, and Hf; M.sup.5 represents at least one element selected from the group consisting of Ni, Ce, Eu, Fe, Mn, Nd, Tm, Ho, Er, and Yb; and p, q, r, s, t, u, v, w, x, y, and z satisfy 0p1.0, 0.1q0.9, 0r1.0, 0.05s0.45, 0t0.5, 0.05u0.45, 0v1.0, 0.8w1.3, 2.6x3.6, 0.002y0.5, 0z0.3, and 0.9q+s+u1.2.

A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 m or more and 0.01 m or less.

A display device includes a base substrate, a partitioning wall on the base substrate, wherein the partitioning wall includes a first partitioning wall, and a second partitioning wall on the first partitioning wall, and a light emitting element spaced from the partitioning wall and located in a space surrounded by the partitioning wall in a plan view. The first partitioning wall and the light emitting element include a same material. The second partitioning wall includes a transparent conductive oxide.

A wavelength converter including, as semiconductor nanoparticles, a first semiconductor nanoparticle that converts light with a wavelength of 450 nm into light with a wavelength .sub.1 nm, and a second semiconductor nanoparticle that converts light with a wavelength of 450 nm into light with a wavelength .sub.2 nm, in which the wavelength .sub.1 and the wavelength .sub.2 satisfy .sub.1>.sub.2>450, and a relation between an emission intensity I.sub.1b and an emission intensity I1a satisfies I.sub.1a<I.sub.1b, where I.sub.1b is an emission intensity at the wavelength .sub.1 when the wavelength converter including the first and second semiconductor nanoparticles is irradiated with light with a wavelength of 450 nm and an excitation photon number N.sub.0, and I.sub.1a is an emission intensity at the wavelength .sub.1 when a wavelength converter including only the first semiconductor nanoparticle is irradiated with the light with a wavelength of 450 nm and an excitation photon number N.sub.0.

A polychrome wafer structure (100,200,200) comprising a plurality of structured first epitaxial dies (102) having first light-emitting devices (107) configured to emit light of a first color, at least a plurality f structured second epitaxial dies (103) having second light-emitting devices (107) configured to emit light of a second color. The plurality of the structured first epitaxial dies (102) and the plurality of the structured second epitaxial dies (103) are bonded on a target wafer (507) with a plurality of common monolithic integrated circuits in a manner that the at least one first die and the at least one second die is connected to common monolithic integrated (101) one circuit for simultaneously driving at least one first epitxial die (102) having light-emitting device (107) and at least one second epitaxial die (103) having light-emitting device (107) by the respective one common monolithic integrated circuit (101).

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LED chips are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric materials may form dielectric and/or passivation layers between various chip structures, such as between active LED structures and internal reflective layers and/or electrical contacts. Internally converted light propagating within LED chips may pass back through active LED structures with reduced light absorption.

Compositions of matter, downconversion layers including the compositions of matter, and devices including the compositions of matter are described. In an embodiment, the compositions of matter are downconversion materials configured to absorb a quantum of energy of a first energy and, in response, emit two or more quanta of energy of a second energy less than the first energy. Methods of making and depositing downconversion materials are also described. Downconversion precursor mixtures suitable for making downconversion materials and methods of making the same are also described.