This specification discloses a converter element and light emitting devices including the converter element. The converter element is monolithic with at least two layers, where one layer is more porous than the other layer. The converter element may be integrated with a reflector layer, such as by metallization. The layer of the converter structure that is denser and having a smoother surface may be the one that is metallized, while the more porous layer is closer to the laser. The porosity enhances light extraction while the smoother surface decreases a loss of reflectivity at the reflector-phosphor interface. The converter element may be used in a laser based light emitting device.

A light emitting device includes a first light emitter including a first light emitting chip emitting first blue light and at least one among a first phosphor and a second phosphor, the first light emitter being configured to emit second blue light, and a second light emitter including a second light emitting chip emitting third blue light and at least one among a third phosphor and a fourth phosphor, the second light emitter being configured to emit fourth blue light, wherein a ratio of an intensity of a peak wavelength of the fourth blue light to an intensity of a peak wavelength of the second blue light is greater than or equal to 0.6.

A display apparatus device including a panel substrate including a circuit, and a light module including light sources each including a light emitter, a connection line, a light transmission layer on the light emitter, and a light block layer on the light transmission layer, in which the light sources includes first to fourth light sources, a transmission layer of the first light source includes a first converter, a transmission layer of the fourth light source includes a second converter, the first converter includes a wavelength converter to convert a first primary light of the first light source into a red color range, the second converter converts a fourth primary light of the fourth light source into a white light, and a peak wavelength of a second primary light of the second light source is different from that of a third primary light of the third light source.

A lighting apparatus a first group of at least one first solid state emitter, each first solid state emitter including a first light emitting diode (LED) that, when excited, emits light having a peak wavelength in a range between about 440 nm and about 475 nm, and a second group of at least one second solid state emitter, each second solid state emitter comprising a second LED that, when excited, emits light having a peak wavelength in a range between about 390 nm and about 415 nm. Between about 2% and about 15% of a spectral power of light emitted from the lighting apparatus is light having wavelengths in the range between about 390 nm and about 415 nm.

A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 605 nm to 655 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 28 nm or less, (2) a standard deviation of a peak wavelength of the emission spectrum is 10 nm or more and 30 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 12 nm or less.

A light emitting device includes a light emitting diode chip configured to emit first light having a peak wavelength of 400 nm to 470 nm; a wavelength conversion material converting a portion of the first light into second light having a peak wavelength of 620 nm to 670 nm; and a near-infrared phosphor configured to convert a portion of the first light into third light having a peak wavelength of 740 nm to 820 nm, wherein the near-infrared phosphor includes a phosphor represented by composition formula CaAl.sub.(12-x-y)Ga.sub.yO.sub.19:xCr.sup.3+, where x satisfies 0.1x0.3 and y satisfies 1 or more, and an emission spectrum of the third light alone has a ratio of an intensity of 690 nm relative to an intensity of 780 nm of 0.3 or less.

A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design. The single (LED) structure can also include a substrate for supporting the array, and the substrate can include one or more light shielding holes located between each emitting zone.

A light-emitting device includes: a light-emitting element emitting a first light having a first peak wavelength; a first wavelength conversion member contacting a side surface of the light-emitting element and including a wavelength conversion material absorbing at least a portion of the first light and emitting a second light having a second peak wavelength different from the first peak wavelength; a second wavelength conversion member on the first wavelength conversion member, the second wavelength conversion member including a wavelength conversion material absorbing at least a portion of the first light and emitting a third light having a third peak wavelength different from the first and second peak wavelengths; and a first light-reflective member on the second wavelength conversion member and at least on the light-emitting element. A continuous light-emitting surface includes a side surface of the first wavelength conversion member and a side surface of the second wavelength conversion member.

A light emission device according to an embodiment of the present disclosure includes a light source unit and a wavelength conversion layer. The light source unit has a light emission surface and emits first light from the light emission surface. The wavelength conversion layer is disposed on a side of the light emission surface of the light source unit, has a first surface disposed to face the light emission surface and a second surface disposed on an opposite side of the first surface, and includes a plurality of wavelength conversion materials that converts the first light into second light in a different wavelength band and a plurality of scattering particles. The wavelength conversion layer has a lower absorption coefficient of the first light in the vicinity of the first surface than in the vicinity of the second surface.

A light emitting device includes: a resin package including: a resin part, and a plurality of leads including a first lead and a second lead, wherein the resin package has a concave portion having a bottom face at which a part of an upper surface of the first lead and a part of an upper surface of the second lead are exposed from the resin part; a light emitting element mounted on the bottom face of the concave portion; and a sealing member covering the light emitting element in the concave portion. The plurality of leads comprise a plurality of notch parts including a first notch part on a first side corresponding to a first outer side surface of the resin package and a second notch part on a second side corresponding to a second outer side surface of the resin package.