This specification discloses a converter element and light emitting devices including the converter element. The converter element is monolithic with at least two layers, where one layer is more porous than the other layer. The converter element may be integrated with a reflector layer, such as by metallization. The layer of the converter structure that is denser and having a smoother surface may be the one that is metallized, while the more porous layer is closer to the laser. The porosity enhances light extraction while the smoother surface decreases a loss of reflectivity at the reflector-phosphor interface. The converter element may be used in a laser based light emitting device.

A light emitting device includes a first light emitter including a first light emitting chip emitting first blue light and at least one among a first phosphor and a second phosphor, the first light emitter being configured to emit second blue light, and a second light emitter including a second light emitting chip emitting third blue light and at least one among a third phosphor and a fourth phosphor, the second light emitter being configured to emit fourth blue light, wherein a ratio of an intensity of a peak wavelength of the fourth blue light to an intensity of a peak wavelength of the second blue light is greater than or equal to 0.6.

A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

A chip structure is provided. The chip structure includes: a chip wafer unit and a color conversion layer unit arranged on a light-exit side of the chip wafer unit. The chip wafer unit includes a plurality of sub-pixel light-emitting function layers. The color conversion layer unit includes color conversion layers arranged on the light-exit side of the chip wafer unit. The chip structure further includes: an attaching layer, arranged between the chip wafer unit and the color conversion layer unit and configured to attach the chip wafer unit and the color conversion layer unit.

There is provided a light emitting device (10) including a plurality of pixels (20) arranged on a substrate, in which a pixel of the plurality of pixels includes a plurality of subpixels (100), at least one subpixel of the plurality of subpixels includes a plurality of light emitting elements (200), each light emitting element includes: a first electrode (202) provided on the substrate (300); a light emitting layer (204) that is laminated on the first electrode and emits light; a second electrode (206) that is laminated on the light emitting layer and transmits light from the light emitting layer; and a first protective film (208) that is laminated on the second electrode and transmits light from the light emitting layer, and a second protective film (210) constituting an interface for guiding the light immediately above the light emitting element is embedded between the light emitting elements adjacent.

A first pixel configured to emit light of a first color, a second pixel configured to emit light of a second color; and a third pixel configured to emit light of a third color are provided. The first pixel includes a first subpixel and a second subpixel each including a quantum dot light-emitting layer. A light-emission peak wavelength of the second subpixel is longer than a light-emission peak wavelength of the first subpixel.

A display apparatus includes a color filter substrate, a first encapsulation layer, a first bank layer, wavelength selective dimming patterns, color conversion patterns, a second encapsulation layer, a driving circuit substrate, a second bank layer and light emitting components. The wavelength selective dimming patterns are disposed in at least a portion of first openings of the first bank layer. The color conversion patterns are disposed in the first openings and on the wavelength selective dimming patterns. One wavelength selective dimming pattern includes a base material and scattering particles. The wavelength selective dimming pattern has a thickness within a range of 2 m to 10 m in a direction perpendicular to the color filter substrate. A volume ratio of the scattering particles to the wavelength selective dimming pattern falls within a range of 0.5% to 4.5%. Diameters of the scattering particles fall within a range of 80 nm to 200 nm.

A display device includes a first substrate, a transistor disposed on the first substrate, a light emitting device connected to the transistor, an encapsulation layer covering the light emitting device, a plurality of banks disposed to overlap the encapsulation layer in a plan view and partitioning a first emission area, a second emission area, and a third emission area, a first color conversion layer disposed in the first emission area, a second color conversion layer disposed in the second emission area, and a transmission layer disposed in the third emission area. A thickness of at least one of the first color conversion layer or the second color conversion layer is greater than a thickness of the plurality of banks.

An embodiment of the application discloses a panel and a manufacturing method thereof. In the panel, a thin-film transistor layer, a first conductive layer, a light-emitting diode (LED), and a second conductive layer are sequentially disposed on a substrate. The LED includes a first end and a second end. The first end is disposed on the first electrode. The second end is disposed on the second electrode. The second conductive layer includes a first conductive portion and a second conductive portion. The first conductive portion is electrically connected to the first end and the first electrode. The second conductive portion is electrically connected to the second end and the second electrode.

A lighting device includes a substrate, light sources having a first light source on the substrate, a resin layer sealing the plurality of light sources on the substrate; and a light transmitting layer on the resin layer. A surface of the resin layer has an upper surface and side surfaces, and the side surfaces of the resin layer has a convex curved surface. The light transmitting layer has a first flat region on the upper surface of the resin layer and a second curved region on the side surfaces of the resin layer. The convex curved surface of the resin layer and the second curved region of the light transmitting layer overlap the first light source in a vertical direction, and a corner between two adjacent the side surfaces of the resin layer has a convex curved surface.