A display apparatus includes a color filter substrate, a first encapsulation layer, a first bank layer, wavelength selective dimming patterns, color conversion patterns, a second encapsulation layer, a driving circuit substrate, a second bank layer and light emitting components. The wavelength selective dimming patterns are disposed in at least a portion of first openings of the first bank layer. The color conversion patterns are disposed in the first openings and on the wavelength selective dimming patterns. One wavelength selective dimming pattern includes a base material and scattering particles. The wavelength selective dimming pattern has a thickness within a range of 2 m to 10 m in a direction perpendicular to the color filter substrate. A volume ratio of the scattering particles to the wavelength selective dimming pattern falls within a range of 0.5% to 4.5%. Diameters of the scattering particles fall within a range of 80 nm to 200 nm.

A light emission device according to an embodiment of the present disclosure includes a light source unit and a wavelength conversion layer. The light source unit has a light emission surface and emits first light from the light emission surface. The wavelength conversion layer is disposed on a side of the light emission surface of the light source unit, has a first surface disposed to face the light emission surface and a second surface disposed on an opposite side of the first surface, and includes a plurality of wavelength conversion materials that converts the first light into second light in a different wavelength band and a plurality of scattering particles. The wavelength conversion layer has a lower absorption coefficient of the first light in the vicinity of the first surface than in the vicinity of the second surface.

An electronic device including a first substrate, an isolating layer, a porous structure, a light conversion unit, and a color filter unit is provided. The isolating layer is disposed on the first substrate and has an opening. The porous structure is disposed in the opening and has a plurality of pores arranged irregularly. The light conversion unit is disposed in the pores. The color filter unit is disposed between the first substrate and the porous structure, and the color filter unit comprises a color filter pattern overlapped with the light conversion unit in a normal direction of the first substrate.

This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

A backlight unit includes: a light guide plate of an entirely flat structure; a light emitting element disposed on at least one side of the light guide plate; a first reflection part disposed under the light guide plate and having one side thereof extended to a region where the light emitting element is positioned; a second reflection part disposed on the light emitting element; and a housing for accommodating the light guide plate, the light emitting element, and the first and second reflection parts, wherein the housing has a second side which is vertically extended upwards with respect to a first side which defines a lateral cross section of the housing in which the light emitting element is accommodated as the lower side, and a third side which is vertically extended inwards with respect to the second side.

In one embodiment, the transparent growth substrate of an LED die is formed to have light scattering areas, such as voids formed by a laser. In another embodiment, the growth substrate is removed and replaced by another substrate that is formed with light scattering areas. In one embodiment, the light scattering areas are formed over the light absorbing areas of the LED die, to reduce the amount of incident light on those absorbing areas, and over the sides of the substrate to reduce light guiding. The replacement substrate may be formed to include reflective particles in selected areas. A 3D structure may be formed by stacking substrate layers containing the reflective areas. The substrate may be a transparent substrate or a phosphor tile that is affixed to the top of the LED.

A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.

An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

A light emitting device including a transparent board elongated in a first direction and having a first surface and an opposite second surface. Light emitting elements are arranged in the first direction on the first surface side of the board. A transparent bulb houses the board and the elements. A base is connected to the bulb, and leads electrically connect the elements to the base. The leads have a first end portion connected to the base, and an opposite second end portion. Conductive members are respectively connected to the second end portions of the leads, and the conductive members are arranged at both side of the elements on the board in the first direction. A first wavelength converting member is provided on the first surface and seals the elements. The first wavelength converting member is elongated in the first direction. The second surface of the board faces the base.