An example electronic device including a semiconductor die and a mold compound overlying the die, and the mold compound is chemically altered to attenuate electromagnetic radiation within a range of wavelengths or frequencies.

An electronic device includes a substrate and an electronic structure. The substrate includes a first opening, and the substrate has a first side and a second side opposite to the first side. The electronic structure is disposed on the first side of the substrate. The electronic structure includes a first insulating layer and a conductive layer. In a cross-sectional view, the first opening includes a first width on the first side of the substrate, a second width on the second side of the substrate, and a third width disposed between the first width and the second width. The first width of the first opening is greater than the third width of the first opening. The second width of the first opening is greater than the third width of the first opening.

A molding is formed by laminating an aggregate of SiC and a paste containing Si and C powders on an epitaxial layer of SiC formed on a support substrate of SiC to form an intermediate sintered body in which polycrystalline SiC is produced from the Si and C powders by reaction sintering, free Si is carbonized to SiC to form a sintered body layer, and the support substrate is removed from the epitaxial layer to form a semiconductor substrate in which the epitaxial layer and the sintered body layer are laminated.

A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.

A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.

A display device includes a display panel including a display area and a non-display area; a first signal line in the non-display area and transmitting an initialization voltage; a connection wire in the non-display area and electrically connected to the first signal line; a bridge pattern connecting the first signal line to the connection wire; an insulating layer between the first signal line and the bridge pattern; a partition wall on the bridge pattern; and a spacer on the partition wall, wherein the insulating layer includes a first contact hole overlapping the first signal line, and a second contact hole overlapping the connection wire, the first signal line is connected to the bridge pattern through the first contact hole, the bridge pattern is connected to the connection wire through the second contact hole, the partition wall covers the first contact hole, and the spacer overlaps the first contact hole.

A lighting device disclosed in an embodiment of the invention includes: a lighting module emitting a first light and a second light; and a lens disposed on the lighting module to block light of a shorter wavelength among the first light and the second light and transmit light of a longer wavelength, wherein the lighting module includes: a substrate; a plurality of light emitting devices disposed on the substrate and emitting a first light; a resin layer covering the plurality of light emitting devices; and a phosphor layer disposed on the resin layer to convert the first light into second light, wherein the first and second light travel through the phosphor layer in the lens direction, and the second light may pass through the lens.

A COB type photoelectric device is provided. The COB type photoelectric device includes: a metallic substrate including a photoelectric element fixing area; a dam disposed on the metallic substrate and surrounding the photoelectric element fixing area; first photoelectric elements disposed on the metallic substrate and in the photoelectric element fixing area; a KSF phosphor based layer disposed on the first photoelectric elements and being not in contact with the metallic substrate; and an isolation layer disposed in the dam and covering the KSF phosphor based layer. The KSF phosphor based layer includes a KSF phosphor. The COB type photoelectric device can make full use of high luminous efficiency performance of the KSF, and improve luminous efficiency of the COB type photoelectric device while maintaining stability of the KSF.

A light-emitting module including a substrate, a plurality of light-emitting elements, a window plate, and an encapsulant is provided. The light-emitting elements are disposed on the substrate and have a plurality of light colors. The window plate is disposed on light-emitting surfaces of the light emitting elements. The encapsulant wraps the light-emitting elements and surrounds the window plate. A front-lit liquid-crystal-on-silicon module is also provided.

The invention relates to various aspects of a -LED or a -LED array for augmented reality or lighting applications, in particular in the automotive field. The -LED is characterized by particularly small dimensions in the range of a few m.