The invention relates to an assembly of light sources including an integrated circuit with a connection pad, a light-emitting part with micro-LEDs and an active surface, a fan-out encapsulation surrounding at least a part of the integrated circuit, a first multilayer metal layer, a second metal layer that includes contact parts being in direct contact with a rear face of the integrated circuit, a heat sink, a matrix fixation layer arranged between the second metal layer and the heat sink and a printed circuit board. The first metal layer is arranged so as to cover at least a part of the front face of the integrated circuit, providing an electrical connection between the pad of the integrated circuit and a pad of the assembly.

An example display apparatus includes a liquid crystal panel; a light source plate including a printed circuit board disposed behind the liquid crystal panel, and a light source module mounted on the printed circuit board to supply light to the liquid crystal panel. The light source module includes a light emitting diode (LED) chip; a light guide provided to guide the light emitted from the LED chip; a light converter provided to convert a wavelength of light guided through the light guide, and disposed on a first surface of the light guide and attached to the printed circuit board; and a distributed Bragg reflector (DBR) layer disposed on a second surface of the light guide body and provided to improve a light conversion efficiency of the light conversion member.

A lower sheet disposed below a display panel includes a heat radiation layer having a first side and a second side facing the first side. A first film layer is disposed on the first side of the heat radiation layer. A second film layer is disposed on the second side of the heat radiation layer. A first resin layer is disposed between the heat radiation layer and the first film layer. A second resin layer is disposed between the heat radiation layer and the second film layer. A sealing layer is disposed on lateral sides of the heat radiation layer. The sealing layer directly contacts an entirety of the lateral sides of the heat radiation layer, and directly contacts at least a portion of lateral sides of the first resin layer and the second resin layer.

This invention relates to a flip-chip light-emitting diode and a method for manufacturing the same. The flip-chip light-emitting diode comprises a packaging body and a conductor layer. At least one light-emitting diode chip is encapsulated in the packaging body. The light emitting diode chip has a positive electrode and a negative electrode which are exposed on a side surface of the packaging body. The conductor layer is disposed on the side surface of the packaging body and directly in contact with the positive electrode and the negative electrode of the light-emitting diode chip. The conductor layer has circuit patterns and an insulating portion insulating the positive electrode and the negative electrode of the light-emitting diode chip from each other.

In one embodiment, a solid cylindrical tablet is pre-formed for a reflective cup containing an LED die, such as a blue LED die. The tablet comprises uniformly-mixed phosphor particles and transparent/translucent particles of a high TC material, such as quartz, in a hardened silicone binder, where the index of refraction of the high TC material is matched to that of the silicone to minimize internal reflection. Tablets can be made virtually identical in composition and size. The bulk of the tablet will be the high TC material. After the tablet is placed in the cup, the LED module is heated, preferably in a vacuum, to melt the silicone so that the mixture flows around the LED die and fills the voids to encapsulate the LED die. The silicone is then cooled to harden.

An optoelectronic device includes a first optoelectronic unit; a second optoelectronic unit; a third optoelectronic unit formed between the first optoelectronic unit and the second optoelectronic unit; a first electrode formed on and electrically connected to the first optoelectronic unit; a second electrode formed on and electrically connected to the second optoelectronic unit; a first pad electrically insulated from the third optoelectronic unit wherein the first pad is formed on the third optoelectronic unit or disposed between the first electrode and the second electrode; and a plurality of conductor arrangement structures electrically connected to the first optoelectronic unit, the second optoelectronic unit, and the third optoelectronic unit.

Solid-state transducers (SSTs) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.

A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.

A light emitting device package can include a base including a flat top surface; first and second electrical circuit layers on the flat top surface; a light emitting diode on a region of the flat top surface; an optical member to pass light; and a guiding member having a closed loop shape surrounding the region for guiding the optical member, in which the first and second electrical circuit layers respectively include first and second portions disposed between the flat top surface and a bottom surface of the guiding member, in which the first and second electrical circuit layers respectively include first and second extension portions that respectively extend from the first and second portions to locations outside of an outer edge of the guiding member in different directions.