An electronic component has an electronic semiconductor chip and a heat sink which is provided for dissipating heat generated during the operation of the electronic semiconductor chip. A lower face of the electronic semiconductor chip is secured to an upper face of the heat sink and is thermally connected to the heat sink. A connecting surface which is formed between the lower face of the electronic semiconductor chip and the upper face of the heat sink is segmented into connecting surface segments, wherein adjacent connecting surface segments are mutually spaced on a plane which is parallel to the lower face of the electronic semiconductor chip.

A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.

A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

A circuit board for a light emitting module, comprises a plurality of mounting positions for LEDs, wherein the mounting positions are distributed in a regular two-dimensional pattern on a first surface side of the circuit board. The circuit board is characterized by (i) a plurality of transparent domains, each transparent domain extending around one mounting position of the plurality of mounting positions, and (ii) a plurality of thermally conductive domains, each thermally conductive domain being electrically and thermally connected to at least one mounting position. An average area of the electrically conductive domains is at least 2% of an average area of the transparent domains. Each thermally conductive domain of the plurality of thermally conductive domains comprises at least a portion, which extends as a two-dimensional area on a surface of the circuit board.

A ceramic insulating film (150) having a heat conducting property and a light reflecting property is formed on a front surface of a substrate (100), and a light emitting element (110) is provided on the ceramic insulating film. This makes it possible to improve a heat dissipation characteristic and a light utilization efficiency of a light emitting apparatus (10) having the light emitting element (101) provided on the substrate (110).

A light emitting device includes a metal support structure comprising Cu; an adhesion structure on the metal support structure and comprising Au; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure on the reflective conductive contact, the GaN-based semiconductor structure comprising a first-type GaN layer, an active layer, and a second-type GaN layer; a top interface layer on the GaN-based semiconductor structure and comprising Ti; and a contact pad on the top interface layer and comprising Au, wherein the GaN-based semiconductor structure is less than 1/20 thick of a thickness of the metal support structure.

There is provided an electronic component mounting substrate which excels in resistance to migration, and is thus capable of maintaining high thermal conductivity and insulation performance for a long period of time. An electronic component mounting substrate includes: a metallic substrate formed of aluminum or an aluminum-based alloy; an alumite layer disposed on the metallic substrate, having a network of crevices at an upper surface thereof; and a ceramic layer disposed on the alumite layer, part of the ceramic layer extending into the crevices.

A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

Provided are interconnect circuits for combined electrical and thermal energy transfer to devices connected to these circuits. Also provided are methods of fabricating such interconnect circuits. An interconnect circuit may include an electro-thermal conductor and at least one insulator providing support to different portions of the conductor with respect to each other. The insulator may include one or more openings for electrical connections and/or heat exchange with the electro-thermal conductor. The portions of the conductor may be electrically isolated from each other in the final circuit. Initially, these portions may be formed from the same conductive sheet, such as a metal foil having a thickness of at least about 50 micrometers. This thickness ensures sufficient thermal transfer in addition to providing excellent electrical conductance. In some embodiments, the conductor may include a surface coating to protect its base material from oxidation, enhancing electrical connections, and/or other purposes.

Solid-state transducers (SSTs) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.