A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture. Thus, this method effectively reduces the optical-mode field diameter of the device, significantly decreases the spectral width of LED, and produces single-mode emission of VCSEL.

In an embodiment an arrangement includes a plurality of optoelectronic semiconductor components arranged in a common plane, wherein each semiconductor component is laterally delimited by side faces, and wherein each semiconductor component includes a semiconductor body having an active region configured to emit electromagnetic radiation, a radiation outlet side configured to couple out the electromagnetic radiation, a rear face opposite to the radiation outlet side, and a contact structure arranged on the rear face, an output element, an electrically insulating insulation layer and an electrical connection structure, wherein the insulation layer is arranged between side faces of adjacent semiconductor components, wherein the output element is arranged at the radiation outlet sides of the semiconductor components, wherein the electrical connection structure is electrically conductively connected with the contact structure, and wherein the connection structure includes an adhesive layer, a growth layer and a connection layer.

Display devices using feedback-enhanced light emitting diodes are disclosed. The display devices include but are not limited to active and passive matrix displays and projection displays. A light emissive element disposed between feedback elements is used as light emitting element in the display devices. The light emissive element may include organic or non-organic material. The feedback elements coupled to an emissive element allow the emissive element to emit collimated light by stimulated emission. In one aspect, feedback elements that provide this function include, but are not limited to, holographic reflectors with refractive index variations that are continuous.

A light emitting device includes a light emitting chip which generates a first light having a first color, a first cavity layer disposed on the light emitting chip and which generates a second light having a second color and has a first refractive index, a second cavity layer disposed on the first cavity layer and which generates a third light having a third color and has a second refractive index, a first half mirror layer disposed between the first cavity layer and the light emitting chip and which reflects at least a portion of the second light, a second half mirror layer disposed between the first cavity layer and the second cavity layer and which reflects at least a portion of the third light, and a third half mirror layer disposed on the second cavity layer and which transmits the first light.

A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

Display devices using feedback-enhanced light emitting diodes are disclosed. The display devices include but are not limited to active and passive matrix displays and projection displays. A light emissive element disposed between feedback elements is used as light emitting element in the display devices. The light emissive element may include organic or non-organic material. The feedback elements coupled to an emissive element allow the emissive element to emit collimated light by stimulated emission. In one aspect, feedback elements that provide this function include, but are not limited to, holographic reflectors with refractive index variations that are continuous.

An optoelectronic component includes a housing having a cavity in which an optoelectronic semiconductor chip having an emission face that emits light rays and a transparent potting material are arranged, wherein the cavity includes at least one side wall at least partly reflecting light rays incident on the side wall and reflectivity of which decreases as an operating period of the component increases, conversion particles are embedded into the potting material, which conversion particles convert light rays having a first wavelength incident on the conversion particles into light rays having a second wavelength, and scattering particles are embedded into the potting material, which scattering particles scatter light rays incident on the scattering particles and the scattering capability of which scattering particles increases as the operating period increases.

A manufacturing method of a resonant cavity light-emitting diode includes: epitaxially forming a first type semiconductor layer in a window with a relatively smaller area; epitaxially forming an active layer, a second type semiconductor layer and a first reflective layer on the first type semiconductor layer, placing them upside down on a carrier substrate, in a direction away from the carrier substrate, the area of the first type semiconductor layer gradually decreasing; and forming a second reflective layer on a sloped wall of the first type semiconductor layer. An upper surface on a side, away from the carrier substrate, of the first type semiconductor layer is a light outlet.

A resonant cavity light-emitting diodes includes a first reflective layer, a first type semiconductor layer, an active layer and a second type semiconductor layer sequentially which are stacked on a first substrate, and a second reflective layer covering a first sidewall of the second type semiconductor layer. An upper surface on a side of the second type semiconductor layer away from the first substrate serves as a light outlet. The first reflective layer and the second reflective layer form a resonant cavity. Light is capable to be reflected for many times in the resonant cavity. The first sidewall includes a lower tangency point and an upper tangency point which are arranged from bottom to top, and a tangent slope at the upper tangency point is larger than a tangent slope at the lower tangency point.