A display substrate, a display panel, and preparation methods thereof. The display substrate includes a base substrate, a bonding pad, and an insulating layer. The bonding pad is located on one side of the base substrate and includes at least two bonding pad layers stacked in a thickness direction of the base substrate. The insulating layer is located between adjacent two of the bonding pad layers, and the insulating layer includes a via. In adjacent two of the bonding pad layers, the bonding pad layer on the side away from the base substrate extends into the via and is electrically connected to the bonding pad layer on the side close to the base substrate.

A display panel includes a first array substrate and multiple light-emitting elements. A light-emitting element includes a first binding electrode and a second binding electrode. The first array substrate includes multiple pixel disposition regions. A pixel disposition region includes a first pad and/or a second pad. The first binding electrode is electrically connected to the first pad, and the second binding electrode is electrically connected to the second pad. The area of the projection of the first pad on the plane on which the display panel is located is greater than or equal to N times the area of the projection of the first binding electrode on the plane, and/or the area of the projection of the second pad on the plane is greater than or equal to N times the area of the projection of the second binding electrode on the plane, where N2.

In an embodiment a semiconductor arrangement includes at least one semiconductor component with a functional layer stack. The functional layer stack includes a first layer of a first conductivity type, a second layer of a second conductivity type arranged on the first layer, an active zone located between the first and the second layer and an electrically conductive nanowire layer, wherein the electrically conductive nanowire layer is arranged at least in regions on a side of the second layer facing away from the first layer. The semiconductor arrangement further includes a holding layer with at least one elevation, wherein the at least one semiconductor component is arranged on the at least one elevation such that a cavity is formed between the at least one semiconductor component and the holding layer, and wherein the nanowire layer is at least partially exposed.

A Micro-LED display chip and a method for manufacturing the same are provided according to the present application. The method includes: providing a driving substrate; providing a first LED layer; bonding the first LED layer to the driving substrate, where the first LED units and a first conductive column are electrically connected to contacts respectively; disposing a second LED layer on the first LED layer, where the second LED layer consists of multiple second LED units and a second filling structure located between the second LED units, the second LED units are electrically connected to the first conductive column directly below them, and the second LED units emit light of a different color from that of the first LED units. This facilitates reducing the process difficulty in manufacturing the multicolor Micro-LED display chips.

Disclosed are a leadframe, a bracket and an LED device. The leadframe includes a first photo-etched metal part, having a first electrode and a chip placement layer thereon, which has a greater length for short and long edges than those of the first electrode; and a second photo-etched metal part, composed of a second electrode and a connection layer thereon, which has a greater length for short and long edges than those of the second electrode; wherein a first long edge of the chip placement layer is flush with a first long edge of the first electrode, and a first long edge of the connection layer is flush with a first long edge of the second electrode; and wherein the chip placement layer and the connection layer are provided with L-shaped pins at corners of their first long edges to cover sidewalls of the corresponding corners.

In an embodiment an optoelectronic semiconductor device includes a semiconductor layer sequence having an active region oriented perpendicular to a growth direction of the semiconductor layer sequence and a passivation regrowth layer oriented at least in part oblique to the active region, wherein the passivation regrowth layer is located directly on the semiconductor layer sequence and runs across a lateral boundary of the active region, wherein the semiconductor layer sequence and the passivation regrowth layer are based on the same semiconductor material system, and wherein the semiconductor material system is InGaAlP or AlInGaAsP.

A chip structure includes a chip wafer unit and a color conversion substrate unit disposed on a light-exit side of the chip wafer unit. The chip wafer unit includes a light-emitting layer and an electrode layer sequentially stacked in a first direction. The light-emitting layer includes light-emitting portions. Each light-emitting portion includes at least two light-emitting sub-portions. The electrode layer includes a cathode, connection electrodes, and anodes in one-to-one correspondence with the light-emitting portions. The at least two light-emitting sub-portions are sequentially connected through at least one connection electrode. Among the at least two light-emitting sub-portions sequentially connected, a first one light-emitting sub-portion is a first selected light-emitting sub-portion, and a last one light-emitting sub-portion is a second selected light-emitting sub-portion. The first selected light-emitting sub-portion is connected to the cathode, and the second selected light-emitting sub-portion is connected to an anode.

Disclosed is a display device including a substrate as well as a plurality of pixels and at least one reflective element located over the substrate. Each of the plurality of pixels has a pixel circuit and a light-emitting element, and the light-emitting element has a pixel electrode electrically connected to the pixel circuit, a first stack structure over the pixel electrode, and a common electrode over the first stack structure. At least one reflective element has a lower electrode, a second stack structure over the lower electrode, and a reflective film overlapping the second stack structure. Each of the first stack structure and the second stack structure includes a plurality of inorganic semiconductor layers.

A light-emitting substrate has a display region and a peripheral region located on at least one side of the display region, the peripheral region includes a first peripheral region, and the first peripheral region and the display region are spaced apart in a first direction. The light-emitting substrate includes: a substrate; a first conductive layer disposed on the substrate, the first conductive layer including a plurality of signal lines located in the display region; an insulating layer covering the plurality of signal lines; and a second conductive layer disposed on the insulating layer. The insulating layer includes a first insulating layer and a second insulating layer sequentially stacked in a direction away from the substrate; and at least between the first peripheral region and the display region, at least part of edges of the first insulating layer exceeds an edge of the second insulating layer.

Light sources including one or more light emitting diodes (LEDs) comprise a down converter material on the one or more LEDs; and a functional material that is laser-patterned on the down converter material. The functional material may be a distributed Bragg reflector (DBR). a dichroic filter (DCF), a ceramic material, or a powdered phosphor layer. The down converter material may comprise a polycrystalline ceramic plate of a phosphor material. A method of manufacturing a light source comprises: patterning a functional material of a light source comprising one or more light emitting diodes and a phosphor material.