A semiconductor light emitting device may be provided that reduces product defects of a light emitting device by including a distributed Bragg reflector disposed at an edge of a light emitting structure, while improving the luminous efficiency of the light emitting device.

In an embodiment a semiconductor arrangement includes at least one semiconductor component with a functional layer stack. The functional layer stack includes a first layer of a first conductivity type, a second layer of a second conductivity type arranged on the first layer, an active zone located between the first and the second layer and an electrically conductive nanowire layer, wherein the electrically conductive nanowire layer is arranged at least in regions on a side of the second layer facing away from the first layer. The semiconductor arrangement further includes a holding layer with at least one elevation, wherein the at least one semiconductor component is arranged on the at least one elevation such that a cavity is formed between the at least one semiconductor component and the holding layer, and wherein the nanowire layer is at least partially exposed.

In an embodiment an optoelectronic semiconductor device includes a semiconductor layer sequence having an active region oriented perpendicular to a growth direction of the semiconductor layer sequence and a passivation regrowth layer oriented at least in part oblique to the active region, wherein the passivation regrowth layer is located directly on the semiconductor layer sequence and runs across a lateral boundary of the active region, wherein the semiconductor layer sequence and the passivation regrowth layer are based on the same semiconductor material system, and wherein the semiconductor material system is InGaAlP or AlInGaAsP.

A method for ultraviolet-laser transfer and cleaning of microelectronic devices includes transferring a microelectronic device from a donor substrate to a receiver substrate, and cleaning the microelectronic device after transfer. Prior to transfer, the microelectronic device is coupled to the donor substrate via a sacrificial layer containing gallium. A first ultraviolet laser beam ablates the sacrificial layer to release the microelectronic device from the donor substrate, leaving behind a gallium residue on the newly exposed surface of the microelectronic device. A second ultraviolet laser beam ablates the gallium residue to clean the microelectronic device. The first and second ultraviolet laser beams may be generated by the same ultraviolet laser. As compared to liquid etching, laser ablation of the gallium residue eliminates a wet-chemistry step and may be performed by the same laser apparatus used for transfer. Laser cleaning is particularly advantageous when the receiver substrate is intolerant to liquid etching.

In an embodiment a method for producing an array of light emitting elements includes providing a growth substrate, applying a mask having a plurality of apertures to the growth substrate, growing structures into the apertures and processing at least some of the structures into light emitting elements, wherein adjacent apertures are arranged at a first distance to each other, wherein adjacent light emitting elements are arranged at a second distance to each other, wherein the second distance is greater than the first distance, wherein at least some of the structures are reduced in an area and the reduced structures are processed into light emitting elements, and wherein the structures are reduced in area by material removal.

A light-emitting substrate and a manufacturing method thereof are disclosed. In the embodiment of the present disclosure, by providing a groove on a base plate in the manufacturing method of the light-emitting substrate, the accuracy of coating the solder resist ink layer can be improved so as to reduce a distance between the solder resist ink layer and the pad assembly and avoid poor soldering or soldering failure caused by the overflow of the solder resist ink onto the pad.

In an embodiment an optoelectronic component includes a plurality of active regions configured to produce electromagnetic radiation, wherein the active regions are laterally arranged next to each other and spaced from each other, wherein the plurality of active regions comprises at least one first-type active region and at least one second-type active region, which are based on the same semiconductor material system and have different bandgaps in order to produce different electromagnetic radiations, wherein the first-type active region is laterally surrounded by a first-type mask and the second-type active region is laterally surrounded by a second-type mask, wherein the masks are of different materials, and wherein the materials of the masks are selected from SiO.sub.2, SiN, TiO, TiN, or Al.sub.2O.sub.3.

Disclosed is a structure of a unit sub-pixel having a size of several microns or tens of microns divided into a plurality of light emitters and connected to each other so that the divided light emitters are diode-connected, and a manufacturing method thereof. By increasing the operating voltage to multiples of voltage values near the turn-on voltage of a single light emitter, power-consumption efficiency is increased, and light efficiency is increased.

A light emitting element containing a Group III nitride semiconductor has a first light emitting region and a second light emitting region having different emission wavelengths, the first light emitting region has a plurality of first regions, the second light emitting region has a plurality of second regions, a planar pattern of the first light emitting region and the second light emitting region is a pattern in which a plurality of units are arranged in a predetermined direction, each of the units being a pattern including one or more of the first regions and one or more of the second regions, and the plurality of first regions are electrically connected to each other in parallel, and the plurality of second regions are electrically connected to each other in parallel.

The invention relates to an optoelectronic device including a control circuit, a pixel comprising a photodetector, a light-emitting diode, and an intermediate region interposed between the photodetector and the light-emitting diode. The photodetector is sensitive to a detection wavelength .sub.2. The light-emitting diode comprises an active stack with a cutoff wavelength Ac shorter than .sub.2 and a buried electrode interposed between an interconnection stack of the circuit and the active stack, and covers a detection surface of the photodetector. The device furthermore comprises a via passing right through the active stack and extending as far as the interconnection stack; an electrical contact passing right through the active stack, in contact with the buried electrode; an electrical path electrically connecting the buried electrode to the control circuit and including the electrical through-contact and the via. The intermediate region is devoid of metal and the buried electrode is transparent to .sub.2.