A displaying apparatus includes a pixel unit. The pixel unit includes at least one pixel having a light emitting device and a light conversion layer for converting a first wavelength of light of the light emitting device into a second wavelength of light different from the first wavelength; and an insulation layer covers side surfaces of the light emitting device and the light conversion layer.

The invention relates a transfer process for micro elements, including at least one picking step wherein at least one micro element is picked up from at least one donor surface by at least one transfer surface and at least one placing step wherein at least one micro element is placed upon at least one receiving surface from at least one transfer surface, wherein the process according to the invention enables that at least the picking step benefits of several flexible parameters.

The invention relates a transfer process for micro elements, including at least one picking step wherein at least one micro element is picked up from at least one donor surface by at least one transfer surface and at least one placing step wherein at least one micro element is placed upon at least one receiving surface from at least one transfer surface, wherein the process according to the invention enables that at least the picking step benefits of several flexible parameters.

The invention disclose method to selectively transfer microdevices from a cartridge substrate to a system substrate by bringing a cartridge substrate closer to the system substrate, wherein the release layer for the first selected microdevice from the cartridge substrate is modified or removed prior to the transfer such that the selected microdevice is held to the cartridge substrate with a lower force than the bonding force of the selected microdevice to the pad.

The invention disclose method to selectively transfer microdevices from a cartridge substrate to a system substrate by bringing a cartridge substrate closer to the system substrate, wherein the release layer for the first selected microdevice from the cartridge substrate is modified or removed prior to the transfer such that the selected microdevice is held to the cartridge substrate with a lower force than the bonding force of the selected microdevice to the pad.

The present disclosure provides a chip transfer device, comprising: a transmission chain loop passing through pickup position(s) and put-down position(s); a driving gear cooperating with the transmission chain loop; and a plurality of pickup components disposed on the transmission chain loop, wherein the driving gear is configured to drive the transmission chain loop such that the pickup components arrive at the pickup positions and the put-down positions, and the pickup component is configured to pick up a chip at a pickup position and put down the chip at a put-down position. The present disclosure also provides a chip transfer method and a magnetic die bonding pen.

The present disclosure provides a chip transfer device, comprising: a transmission chain loop passing through pickup position(s) and put-down position(s); a driving gear cooperating with the transmission chain loop; and a plurality of pickup components disposed on the transmission chain loop, wherein the driving gear is configured to drive the transmission chain loop such that the pickup components arrive at the pickup positions and the put-down positions, and the pickup component is configured to pick up a chip at a pickup position and put down the chip at a put-down position. The present disclosure also provides a chip transfer method and a magnetic die bonding pen.

In an embodiment a semiconductor device includes a semiconductor body configured to generate light of a first main wavelength, wherein the semiconductor body has a first main side having at least one contact region and a second main side opposite the first main side having a light-emitting surface and a coating arranged on the second main side, wherein the coating is substantially transparent to light in a wavelength range of the first main wavelength and is absorbent or reflective to light in a wavelength range of a second main wavelength, wherein the wavelength range of the second main wavelength is below the wavelength range of the first main wavelength and below 450 nm, and wherein the coating includes a multilayer coating sequence of materials of different refractive indices.

In an embodiment a semiconductor device includes a semiconductor body configured to generate light of a first main wavelength, wherein the semiconductor body has a first main side having at least one contact region and a second main side opposite the first main side having a light-emitting surface and a coating arranged on the second main side, wherein the coating is substantially transparent to light in a wavelength range of the first main wavelength and is absorbent or reflective to light in a wavelength range of a second main wavelength, wherein the wavelength range of the second main wavelength is below the wavelength range of the first main wavelength and below 450 nm, and wherein the coating includes a multilayer coating sequence of materials of different refractive indices.

An ultra-small LED chip rework apparatus using a transfer technique according to the present invention is characterized by including a detach press head in a stick-shaped configuration with a second adhesive layer stronger than a first adhesive layer at the lower end and capable of transferring a defective ultra-small LED chip attached to the first adhesive layer to the second adhesive layer by applying pressure to the upper surface of the defective ultra-small LED chip, and a driving unit that moves the detach press head on the substrate in the X, Y, and Z-axis directions.