The present invention relates to a vertically stacked LEDoS micro display panel and a manufacturing method therefor, in which an engineering monolithic epitaxy wafer is used when bonding a front wafer and a back wafer to each other, thus making a process for aligning an LED laminate with a CMOS electrode pad unnecessary, and at the same time, each LED laminate emits only light of a specific color, thus making a color filter unnecessary.

The present invention relates to a vertically-laminated microdisplay panel requiring no color filter, the panel comprising: a back wafer, the top surface of which has multiple CMOS electrode pads aligned thereon; multiple LED laminates, each of which includes multiple light emitting units and multiple bonding layers vertically laminated on the back wafer, and which are aligned on the multiple CMOS electrode pads, respectively; and a common electrode formed on the multiple LED laminates, wherein each of the multiple LED laminates emits only a particular color by having a short passage formed through at least one light emitting unit among the multiple light emitting units to bypass current so as to prevent the current from being injected into the light emitting unit.

A display device a substrate, a driving element above the substrate, a lower electrode above the driving element, a barrier layer entirely covering a side surface of the lower electrode, and including a polymer, and a light-emitting element above the lower electrode.

A light emitting diode (LED) display device includes: a first electrode layer and a second electrode layer disposed to be spaced apart from each other on a substrate; a plurality of micro-LED elements stacked in a longitudinal direction to be parallel to a plane of the substrate on the first electrode layer and the second electrode layer and stacked to be spaced apart from each other; and a first connection electrode coupled to both ends of the plurality of micro-LED elements and extending from one ends of the plurality of micro-LED elements to the first electrode layer and a second connection electrode extending from the other ends of the plurality of micro-LED elements to the second electrode layer and connected to the second electrode layer.

A light emitting diode (LED) device comprises a plurality of pixels on a backplane, each pixel comprising: semiconductor layers, which include an N-type layer, an active region, and a P-type layer; a cathode electrically contacting the N-type layer; an anode comprising anode segments electrically contacting respective portions of the P-type layer; one or more dielectric materials insulating: the active region and the P-type layer from the cathode, the anode segments from each other, and the anode segments from the cathode; and a plurality of interconnects, each respective interconnect affixing a respective anode segment to the backplane. Methods of making and use the devices are also provided.

A method includes transferring a first subset of the first LEDs from a first substrate to a first backplane to form first subpixels in pixel regions, transferring a first subset of the second LEDs to a second backplane and separating the first subset of the second LEDs from a second substrate to leave first vacancies on the second substrate, forming an additional electrically conductive material on a second subset of second LEDs located on the second substrate after transferring the first subset of the second LEDs to the second backplane, positioning the second substrate over the first backplane, such that the first subpixels are disposed in the first vacancies, and transferring the second subset of the second LEDs to a second subset of bonding structures on the first backplane to form second subpixels in the pixel regions, while a gap exists between the first subpixels and the second substrate.

A display device according to an embodiment may include: a substrate; a first electrode disposed on the substrate; an emission layer disposed on the first electrode; a second electrode disposed on the emission layer; and a metal pattern portion disposed on the second electrode.

A packaging structure and a formation method thereof are provided. The packaging structure includes a base, a semiconductor element, a wrap layer, a cap layer, and an electrical connecting structure. The wrap layer is disposed on the base, covers the semiconductor element, and exposes the top surface of the semiconductor element. The cap layer is disposed on the wrap layer and the semiconductor element and includes a first and a second part. The first part is in contact with the semiconductor element. The second part is in contact with the wrap layer, wherein in measurement results of Fourier transform infrared spectroscopy, the ratio between maximum intensities at wavenumbers of 1060 cm.sup.1 to 1080 cm.sup.1 and 780 cm.sup.1 to 800 cm.sup.1 of the second part is greater than 0.65. The electrical connecting structure passes through the base and the wrap layer to electrically connect to the semiconductor element.

A display device includes a substrate including a light emission area and a non-light emission area; an anode electrode positioned on the light emission area of the substrate; a light emitting layer positioned on the anode electrode; a cathode electrode positioned on the light emitting layer; a protective electrode positioned on the cathode electrode; a pixel defining layer positioned on the non-light emission area of the substrate, defining an opening; and a common electrode positioned on the pixel defining layer and in contact with the protective electrode at a portion that overlaps the opening. An inclination angle of a side surface of the light emitting layer, which faces the non-light emission area, with respect to an upper surface of the anode electrode is 60 to 90.

A display device includes a substrate including a display area and a non-display area, a plurality of pixel electrodes disposed on the substrate in the display area, light emitting elements each disposed on a corresponding one of the plurality of pixel electrodes, a common electrode disposed on the light emitting elements and commonly connected to a plurality of pixels, and an auxiliary electrode disposed on the common electrode and not overlapping with the light emitting elements in a thickness direction of the substrate.