The present disclosure provides a display apparatus, a display panel and a method of preparing the same. A display panel includes: a base substrate; and a plurality of light-emitting units provided on the base substrate, where each of the light-emitting units includes a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second electrode which are stacked, the first electrode is provided on a side of the second electrode facing away from the base substrate, and the plurality of light-emitting units share a common first electrode. The present disclosure can improve display resolution.

Disclosed are a light-emitting device, a manufacturing method thereof, and a display screen. In the light-emitting device, an isolation trench is formed from one side of the first semiconductor layer to one side of the second semiconductor layer. A reflective structure is formed on the side wall of the isolation trench and the first semiconductor layer, which helps to reduce light loss and improving the light output efficiency of the device. The isolation trench does not completely penetrate the second semiconductor layer, so that the second semiconductor layer located on the light output surface side is a continuous and uninterrupted integrated structure, and a surface thereof remains flat so that the transparent conductive layer has a flat structure, improving the overall coverage of the transparent conductive layer. The present invention has no cracks, peeling problems, thus improving the electrical stability of the device and increasing the reliability thereof.

A stretchable display device includes a base substrate having a rigid portion and a soft portion; a stretchable line in the soft portion over the base substrate; a first electrode and a second electrode in the rigid portion over the base substrate; and a light-emitting element contacting the first electrode and the second electrode, wherein the first electrode and the second electrode have a plurality of first protrusions and a plurality of second protrusions, and the light-emitting element is in contact with the plurality of first protrusions and the plurality of second protrusions.

A semiconductor device is provided. The semiconductor device includes a semiconductor structure, an outer electrode structure, an inner electrode structure, and an adjustment structure. The semiconductor structure includes a first portion and a second portion, wherein the second portion is on the first portion and includes an active region. The outer electrode structure is on the first portion of the semiconductor structure and has a first top surface. The inner electrode structure is on the second portion of the semiconductor structure and has a second top surface. The adjustment structure covers the semiconductor structure and is in contact with the outer electrode structure and the inner electrode structure, and the adjustment structure has a third top surface. The third top surface is substantially coplanar with either the first top surface, the second top surface, or both.

A display panel includes an integrated circuit substrate, a light-emitting device layer and a second electrode. The light-emitting device layer includes light-emitting devices disposed respectively in light-emitting areas and insulating layers disposed respectively in insulating barrier areas, and each insulating barrier area is disposed between two adjacent light-emitting areas. Each insulating layer has opposite ends respectively connected to the second electrode and the integrated circuit substrate and each light-emitting device is surrounded by several insulating layers, so that the several insulating layers, the second electrode and the integrated circuit substrate together form a closed accommodating chamber for accommodating the light-emitting device.

A light-emitting element extending in one direction includes: a semiconductor core including a main body extending in the one direction, a first end connected to one side of the main body and having an inclined side surface, and a second end connected to an other side of the main body and having a width less than that of the main body; and an insulation film around at least a portion of the outer surface of the semiconductor core, wherein the insulation film includes a first insulation film around the first end of the semiconductor core; and a second insulation film around the second end of the semiconductor core, wherein the diameter of an outer surface of the first insulation film is the same as a diameter of an outer surface of the second insulation film.

An interposer may include a temporary substrate, a common pad disposed on the temporary substrate and light emitting diodes (LEDs) disposed on the common pad. Each of the light emitting diodes may include a first electrode, a first semiconductor layer, an emission layer, a second semiconductor layer, a second electrode, and a passivation layer. The second electrode, the second semiconductor layer, the emission layer, the first semiconductor layer and the first electrode may have a structure formed from sequential lamination. The passivation layer may enclose the second semiconductor layer, the emission layer and the first semiconductor layer. The common pad may be electrically connected to the second electrode at a lower side of the light emitting diodes. The first electrode in each of the light emitting diodes may extend to an upper portion of the passivation layer. A method for inspecting light emitting diodes disposed on a temporary substrate is also disclosed.

Arrays of light emitting diode (LED) devices in which each LED device includes a mesa having a top surface and at least one sidewall defining a trench having a bottom surface. The mesa comprises semiconductor layers including an n-type layer, an active layer, and a P-type layer, and an electrically conductive material fills the trench. An n-contact, which can be a transparent conductive oxide (TCO) layer, lines an entire surface of the sidewall and trench bottom, and a dielectric layer lines an entire length of the TCO layer, such that the dielectric layer optically isolates the trench and the n-contact functions as an n-contact and spreading layer.

A light emitting element includes a semiconductor stack structure, a first electrode, a second electrode, and an insulation layer. The semiconductor stack structure includes a first p-type semiconductor layer, a first active layer, a first n-type semiconductor layer, an intermediate layer, a second p-type semiconductor layer, a second active layer, and a second n-type semiconductor layer. The semiconductor stack structure includes a first opening and a second opening. The first opening is provided continuously in the first p-type semiconductor layer and the first active layer. The second opening in a plan view is located to overlap the first opening. The second opening is provided continuously in the first n-type semiconductor layer, the intermediate layer, the second p-type semiconductor layer, and the second active layer.

A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrically contacting the ohmic contact layer; a first material barrier layer electrically contacting the reflective layer; a current carrying layer electrically contacting the first material barrier layer; and a second material barrier layer electrically contacting the current carrying layer. LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. Methods of making and using the metal stacks and LED devices are also provided.