A display substrate, a display panel, and preparation methods thereof. The display substrate includes a base substrate, a bonding pad, and an insulating layer. The bonding pad is located on one side of the base substrate and includes at least two bonding pad layers stacked in a thickness direction of the base substrate. The insulating layer is located between adjacent two of the bonding pad layers, and the insulating layer includes a via. In adjacent two of the bonding pad layers, the bonding pad layer on the side away from the base substrate extends into the via and is electrically connected to the bonding pad layer on the side close to the base substrate.

Disclosed are a light-emitting device, a manufacturing method thereof, and a display screen. In the light-emitting device, an isolation trench is formed from one side of the first semiconductor layer to one side of the second semiconductor layer. A reflective structure is formed on the side wall of the isolation trench and the first semiconductor layer, which helps to reduce light loss and improving the light output efficiency of the device. The isolation trench does not completely penetrate the second semiconductor layer, so that the second semiconductor layer located on the light output surface side is a continuous and uninterrupted integrated structure, and a surface thereof remains flat so that the transparent conductive layer has a flat structure, improving the overall coverage of the transparent conductive layer. The present invention has no cracks, peeling problems, thus improving the electrical stability of the device and increasing the reliability thereof.

Provided are a light emitting substrate, a method for manufacturing same, and a display apparatus. The light emitting substrate includes a base substrate; a plurality of light emitting units located at a side of the base substrate; a plurality of protective structures located at a side of the plurality of light emitting units facing away from the base substrate; the plurality of protective structures each covers a respective one of the plurality of light emitting units; and a plurality of reflective patterns located at a side of the plurality of protective structures facing away from the plurality of light emitting units; orthographic projections of the plurality of reflective patterns on the base substrate fall within orthographic projections of the plurality of protective structures on the base substrate.

In an embodiment an optoelectronic semiconductor device includes a semiconductor layer sequence having an active region oriented perpendicular to a growth direction of the semiconductor layer sequence and a passivation regrowth layer oriented at least in part oblique to the active region, wherein the passivation regrowth layer is located directly on the semiconductor layer sequence and runs across a lateral boundary of the active region, wherein the semiconductor layer sequence and the passivation regrowth layer are based on the same semiconductor material system, and wherein the semiconductor material system is InGaAlP or AlInGaAsP.

Selective bonding integrates semiconductor devices onto a receiver substrate. A laser releases devices from a substrate according to a pattern. The pattern syncs laser frequency and speed/location of the stage with the receiver substrate, or uses a diffractive optical element and pottering, or masks the emitted laser to a desired size/shape. Laser steering employs digital micromirror devices or fast scanning mirrors followed by an f-theta lens. Sequential selective bonding and laser processing enables full-colour display by transferring violet or blue micro-LEDs and employing colour-conversion layers or sequentially patterning red, green, and blue sub-pixels. The same method transfers driving circuits onto a substrate. A pattern from defective devices is generated after test and used for repair. A second round prints micro-devices onto pads in or beside defective devices. Sidewalls coated with a reflective layer stops crosstalk between pixels, improves light-extraction efficiency, improves emission angle, and provides a uniform light pattern.

A display device includes a first epitaxial structure vertically stacked, a first light emitting element including a second epitaxial structure and a third epitaxial structure, a second light emitting element spaced apart from the first light emitting element and including the first epitaxial structure, a first passivation layer arranged to surround a sidewall of the first light emitting element, and a second passivation layer arranged to surround a sidewall of the second light emitting element. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure may include a structure in which a first semiconductor layer of a first conductivity type, a carrier blocking layer, an active layer, and a second semiconductor layer of a second conductivity type are sequentially stacked.

A manufacturing method for a display device includes providing a display panel, and forming, on the display panel, a coating window including an outer surface, where the forming the coating window on the display panel includes forming a preliminary coating window including a photocurable resin on the display panel, where the preliminary coating window is divided into a first preliminary portion and a second preliminary portion with a boundary surface therebetween, forming a cured surface by irradiating the boundary surface with light having a first wavelength, removing the second preliminary portion from the preliminary coating window, and curing the first preliminary portion by radiating light having a second wavelength which is smaller than the first wavelength onto the first preliminary portion.

Disclosed are a micro-display chip and a preparation method thereof. The micro-display chip includes: a self-luminescence layer, a wavelength conversion layer, and a first transmitting-and-reflecting layer and/or a second transmitting-and-reflecting layer; the first transmitting-and-reflecting layer is disposed between the self-luminescence layer and the wavelength conversion layer; the second transmitting-and-reflecting layer is disposed on another surface of the wavelength conversion layer; the first transmitting-and-reflecting layer has low reflectivity and high transmissivity for the first color light and high reflectivity and low transmissivity for the second color light, and the second transmitting-and-reflecting layer has high reflectivity and low transmissivity for the first color light and low reflectivity and high transmissivity for the second color light. The micro-display chip of the present disclosure can effectively improve the absorbance and color purity of conversion light, thereby obtaining a brighter and purer conversion spectrum.

An interposer may include a temporary substrate, a common pad disposed on the temporary substrate and light emitting diodes (LEDs) disposed on the common pad. Each of the light emitting diodes may include a first electrode, a first semiconductor layer, an emission layer, a second semiconductor layer, a second electrode, and a passivation layer. The second electrode, the second semiconductor layer, the emission layer, the first semiconductor layer and the first electrode may have a structure formed from sequential lamination. The passivation layer may enclose the second semiconductor layer, the emission layer and the first semiconductor layer. The common pad may be electrically connected to the second electrode at a lower side of the light emitting diodes. The first electrode in each of the light emitting diodes may extend to an upper portion of the passivation layer. A method for inspecting light emitting diodes disposed on a temporary substrate is also disclosed.

A light emitting element includes a semiconductor stack structure, a first electrode, a second electrode, and an insulation layer. The semiconductor stack structure includes a first p-type semiconductor layer, a first active layer, a first n-type semiconductor layer, an intermediate layer, a second p-type semiconductor layer, a second active layer, and a second n-type semiconductor layer. The semiconductor stack structure includes a first opening and a second opening. The first opening is provided continuously in the first p-type semiconductor layer and the first active layer. The second opening in a plan view is located to overlap the first opening. The second opening is provided continuously in the first n-type semiconductor layer, the intermediate layer, the second p-type semiconductor layer, and the second active layer.