A light emitting device may include a substrate. A light emitting element layer may be disposed on the substrate and may include light emitting elements having a rod shape. A color conversion layer may be disposed on the light emitting element layer and may include color conversion elements having a rod shape. A first alignment direction of the light emitting elements and a second alignment direction of the color conversion elements may be substantially parallel to each other or intersect at a predetermined angle.

The invention relates to a method for manufacturing an optoelectronic device (1) including an array of diodes (D1, D2, D3) and an array of colour conversion portions (P1, P2), including the following steps: providing the array of diodes (D1, D2, D3), and the upper electrode layers (E1, E2, E3); depositing a dielectric layer (26) having a substantially zero surface potential; applying a potential difference between an electrode (2) and the first upper electrode layers (E1), resulting in the formation of first patterns (M1) with non-zero surface potential in the dielectric layer (26); producing the first colour conversion portions (P1), by contacting the dielectric layer (26) with a colloidal solution (S1) containing first photoluminescent particles (p1).

A chip structure includes a chip wafer unit and a color conversion substrate unit disposed on a light-exit side of the chip wafer unit. The chip wafer unit includes a light-emitting layer and an electrode layer sequentially stacked in a first direction. The light-emitting layer includes light-emitting portions. Each light-emitting portion includes at least two light-emitting sub-portions. The electrode layer includes a cathode, connection electrodes, and anodes in one-to-one correspondence with the light-emitting portions. The at least two light-emitting sub-portions are sequentially connected through at least one connection electrode. Among the at least two light-emitting sub-portions sequentially connected, a first one light-emitting sub-portion is a first selected light-emitting sub-portion, and a last one light-emitting sub-portion is a second selected light-emitting sub-portion. The first selected light-emitting sub-portion is connected to the cathode, and the second selected light-emitting sub-portion is connected to an anode.

Light sources including one or more light emitting diodes (LEDs) comprise a down converter material on the one or more LEDs; and a functional material that is laser-patterned on the down converter material. The functional material may be a distributed Bragg reflector (DBR). a dichroic filter (DCF), a ceramic material, or a powdered phosphor layer. The down converter material may comprise a polycrystalline ceramic plate of a phosphor material. A method of manufacturing a light source comprises: patterning a functional material of a light source comprising one or more light emitting diodes and a phosphor material.

This application provides a pixel unit, a manufacturing method therefor, a microdisplay, and a pixel-level discrete device. The pixel unit includes a backplane and a display unit. The display unit is arranged on the backplane, and includes a first device layer and a second device layer. The first device layer includes a first compound light-emitting layer and a second compound light-emitting layer. The second device layer includes a color conversion layer and a third compound light-emitting layer. The color conversion layer is arranged above the first compound light-emitting layer. The color conversion layer is arranged, so that the compound light-emitting layer can implement color development through color conversion, to reduce power and improve performance. The pixel unit occupies less space in the horizontal direction. A decrease in external quantum efficiency caused by a size effect is effectively reduced, power consumption is effectively reduced, and performance such as brightness is improved.

In an embodiment a method includes providing a carrier, applying a plurality of semiconductor chips to the carrier, the semiconductor chips being spaced apart from one another such that cavities are formed between the semiconductor chips, introducing a photo-exposable material, at least the cavities being filled with the photo-exposable material, exposing the photo-exposable material, wherein parts of the photo-exposable material, which are downstream of the semiconductor chips with respect to an exposure remain unexposed, removing unexposed parts of the photo-exposable material, wherein recesses are formed, applying a functional layer to the semiconductor chips, and removing the exposed photo-exposable material.

The invention relates to a method for manufacturing an optoelectronic device (1) with a diode array (20), including the following steps: producing an electret layer (30) having conversion zones (Zc) separated two-by-two by a spacing zone (Ze) with zero surface potential, where each conversion zone (Zc) is formed of a plurality of so-called polarized elementary zones (32) with non-zero surface potential, spaced apart two-by-two by a so-called non-polarized elementary zone (33) with zero surface potential, such that the conversion zone (Zc) has a structured surface potential; producing color conversion pads (P), by placing the electret layer (30) in contact with a colloidal solution(S) containing photoluminescent particles (p).

The present invention relates to a LED filament (1) having a longitudinal extension (L) and a transverse extension (W) being perpendicular to the longitudinal extension (L), the LED filament (1) comprising: at least one first LED filament portion (2) extending in the longitudinal extension (L) of the LED filament (1) and comprising a plurality of first LED dies (3) adapted to emit first LED light, the first LED dies (3) being encapsulated by a first encapsulant (4) comprising a luminescent material; at least one second LED filament portion (5) parallel to the first LED filament portion (2) and comprising a plurality of red, green, and blue LED dies (6, 7, 8) adapted to emit second LED light comprising at least one of red, green and blue light; wherein the plurality of red, green, and blue LED dies (6, 7, 8) are arranged in rows running in the transverse direction (W) and spaced apart in the longitudinal direction (L), wherein each row comprises at least two LED dies, and wherein at least one of the red LED die and the green LED die (6, 8) is arranged between each blue LED die (7) and the first LED filament portion (2) in order to reduce or prevent optical cross-talk between the first encapsulant (4) and the second LED light.

The invention relates to a preparation method of Na.sup.+/Cu.sup.2+ ions co-doped cesium lead bromide perovskite quantum dots, products and applications thereof, which belongs to the technical field of modification research of perovskite quantum dots. The invention discloses a preparation method of Na.sup.+/Cu.sup.2+ ions co-doped cesium lead bromide (CsPbBr.sub.3) perovskite quantum dots, which adopts lead bromide (PbBr.sub.2), oleic acid (OA), oleylamine (OAm), sodium ion precursors and copper ion precursors for the reaction preparation in octadecene (ODE), in which copper ions (Cu.sup.2+) and sodium ions (Na.sup.+) substitute A and B crystal sites in cesium lead bromide (CsPbBr.sub.3) perovskite fluorescent quantum dots respectively. The quantum dots have been effectively improved in photoluminescence quantum yield, thermal stability, etc., and can be used as an active layer to fabricate light emitting diodes which achieve the tuning of emission color from green to blue.

A method of manufacturing an optoelectronic device including the steps of manufacturing of the display pixel circuits, each comprising an emission surface, and on the surface, walls delimiting at least one cavity, of bonding of the display pixel circuits to a support, and of filling of the at least one cavity of each display pixel circuit with a first filling material to form a first color conversion module in the cavity.