A light-emitting diode (LED) structure includes an active region that has at least one aluminum-containing quantum well (QW) stack that emits light from the LED structure when activated. The LED structure exhibits a modified internal quantum efficiency value, which is higher than a LED structure that does not include aluminum within a QW stack. The LED structure also exhibits a modified peak wavelength, which is longer than an unmodified peak wavelength of the unmodified LED structure.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LED chips are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric materials may form dielectric and/or passivation layers between various chip structures, such as between active LED structures and internal reflective layers and/or electrical contacts. Internally converted light propagating within LED chips may pass back through active LED structures with reduced light absorption.

Provided are a light emitting substrate, a method for manufacturing same, and a display apparatus. The light emitting substrate includes a base substrate; a plurality of light emitting units located at a side of the base substrate; a plurality of protective structures located at a side of the plurality of light emitting units facing away from the base substrate; the plurality of protective structures each covers a respective one of the plurality of light emitting units; and a plurality of reflective patterns located at a side of the plurality of protective structures facing away from the plurality of light emitting units; orthographic projections of the plurality of reflective patterns on the base substrate fall within orthographic projections of the plurality of protective structures on the base substrate.

Disclosed are an integrated LED packaging structure and a packaging method, and relates to the technical field of LED packaging. The disclosure includes a shell, a bottom end of the shell is fixedly connected to a pin platform, a top end of the shell is fixedly connected to an LED plug, three lamp beads are fixedly mounted at a top end of the LED plug, a bottom end of the pin platform is fixedly connected to a cup cavity, and a bottom end of the cup cavity is fixedly connected to connecting pins. The top end of the LED plug is provided with LED sockets in positions corresponding to the lamp beads, and bottom ends of inner sides of the LED sockets are fixedly connected to insulating plates. Furthermore, a combination of an in-line and SMD form is adopted, and the lower half part adopts an SMD structure.

There is disclosed a method of manufacturing a light emitting diode (LED) arrangement, the method comprising the steps of installing an LED on a circuit board; and covering the circuit board and other electronic components on the circuit board with a layer of silicon coating; wherein a top emitting area of the LED is kept exposed or uncovered for increasing efficiency of the LED arrangement. Also disclosed is a lighting system, comprising a plurality of light emitting diode (LED) strips in connection with a photo-voltaic (PV) panel, the LED strips comprising a plurality of LEDs and infra-red (IR) LEDs, wherein the plurality of LEDs and IR LEDs are installed on the LED strips at a ratio of 1:8, for mitigating shadow losses and for increasing efficiency of the lighting arrangement.

The present invention relates to a LED filament (1) having a longitudinal extension (L) and a transverse extension (W) being perpendicular to the longitudinal extension (L), the LED filament (1) comprising: at least one first LED filament portion (2) extending in the longitudinal extension (L) of the LED filament (1) and comprising a plurality of first LED dies (3) adapted to emit first LED light, the first LED dies (3) being encapsulated by a first encapsulant (4) comprising a luminescent material; at least one second LED filament portion (5) parallel to the first LED filament portion (2) and comprising a plurality of red, green, and blue LED dies (6, 7, 8) adapted to emit second LED light comprising at least one of red, green and blue light; wherein the plurality of red, green, and blue LED dies (6, 7, 8) are arranged in rows running in the transverse direction (W) and spaced apart in the longitudinal direction (L), wherein each row comprises at least two LED dies, and wherein at least one of the red LED die and the green LED die (6, 8) is arranged between each blue LED die (7) and the first LED filament portion (2) in order to reduce or prevent optical cross-talk between the first encapsulant (4) and the second LED light.

The invention relates to a preparation method of Na.sup.+/Cu.sup.2+ ions co-doped cesium lead bromide perovskite quantum dots, products and applications thereof, which belongs to the technical field of modification research of perovskite quantum dots. The invention discloses a preparation method of Na.sup.+/Cu.sup.2+ ions co-doped cesium lead bromide (CsPbBr.sub.3) perovskite quantum dots, which adopts lead bromide (PbBr.sub.2), oleic acid (OA), oleylamine (OAm), sodium ion precursors and copper ion precursors for the reaction preparation in octadecene (ODE), in which copper ions (Cu.sup.2+) and sodium ions (Na.sup.+) substitute A and B crystal sites in cesium lead bromide (CsPbBr.sub.3) perovskite fluorescent quantum dots respectively. The quantum dots have been effectively improved in photoluminescence quantum yield, thermal stability, etc., and can be used as an active layer to fabricate light emitting diodes which achieve the tuning of emission color from green to blue.

A display device includes a substrate including a first area and a second area surrounding the first area, a first electrode disposed in the first area, a first bank layer disposed on the first electrode and defining a first opening that overlaps the first electrode and a second opening that overlaps the second area, an intermediate layer disposed on the first electrode, a second electrode disposed on the intermediate layer, and an encapsulation layer disposed on the second electrode and defining a third opening that overlaps the second area, wherein the first bank layer includes a first sub-bank layer and a second sub-bank layer, the second sub-bank layer being disposed on the first-sub bank layer and including a first tip extending toward the first opening and a second tip extending toward the second opening.

Provided is a method of preparing a transparent resin layer, the method including forming a photocurable composition layer by applying a photocurable composition onto a substrate including a first region; performing (a) an exposure process of covering the first region of the photocurable composition layer with a mask and exposing the first region with a first light; and performing (b) an exposure process of exposing an entire surface of the photocurable composition layer with a second light, wherein the first light cures the photocurable composition layer more firmly than the second light does.

An interposer may include a temporary substrate, a common pad disposed on the temporary substrate and light emitting diodes (LEDs) disposed on the common pad. Each of the light emitting diodes may include a first electrode, a first semiconductor layer, an emission layer, a second semiconductor layer, a second electrode, and a passivation layer. The second electrode, the second semiconductor layer, the emission layer, the first semiconductor layer and the first electrode may have a structure formed from sequential lamination. The passivation layer may enclose the second semiconductor layer, the emission layer and the first semiconductor layer. The common pad may be electrically connected to the second electrode at a lower side of the light emitting diodes. The first electrode in each of the light emitting diodes may extend to an upper portion of the passivation layer. A method for inspecting light emitting diodes disposed on a temporary substrate is also disclosed.