A quantum technological, micro-optical, micro-electronic or photonic system, includes a planar substrate, a microelectronic circuit which is part of the substrate; at least one electrical component comprised within the microelectronic circuit, a micro-optical subdevice which is part of the planar substrate, one or more nanoparticles being diamonds; and a colloidal film, wherein the one or more nanoparticles are comprised within the first portion of the colloidal film. The colloidal film includes the one or more nanoparticles. The system further comprises at least one light-emitting electro-optical component. The light-emitting electro-optical component interacts with the electrical component via the micro-optical subdevice. The one or more nanoparticles include two NV centers. The at least two NV centers interact with one another in a physically observable manner. The interaction between the light-emitting component and the electrical component takes place with involvement of the at least two NV centers.

A method for fabricating a single pixel micro LED device for a display panel includes providing a substrate having a pixel driver and fabricating an LED structure layer stacked on top of the substrate. The method further includes bonding the substrate and the LED structure layer together by a bonding layer. The LED structure layer is electrically connected to the pixel driver via the bonding layer. In some embodiments, before bonding the substrate and the LED structure layer, the method includes coating a reflection layer on the LED structure layer. In some embodiments, the method includes patterning the LED structure layer to form a red light LED.

A method for manufacturing an LED structure includes forming a first semiconductor layer on a first substrate; performing a first implantation operation to form a first implanted region and a first non-implanted region in a second doping semiconductor layer of the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; performing a second implantation operation to form a second implanted region and a second non-implanted region in a fourth doping semiconductor layer of the second semiconductor layer; performing a first etch operation to remove a portion of the second semiconductor layer and expose at least the first non-implanted region; performing a second etch operation to expose a plurality of contacts of a driving circuit formed in the first substrate; and electrically connecting the first non-implanted region and the second non-implanted region with the plurality of contacts.

In.sub.xAl.sub.yGa.sub.1-x-yN semiconductor structures having optoelectronic elements characterized by epitaxial layers having different in-plane a-lattice parameters and different InN mole fractions are disclosed. The active regions are configured to emit radiation in different wavelength ranges and are characterized by strain states within about 1% to 2% of compressive strain. The epitaxial layers are grown on patterned In.sub.xAl.sub.yGa.sub.1-x-yN seed regions on a single substrate, where the relaxed InGaN growth layers provide (0001) In.sub.xAl.sub.yGa.sub.1-x-yN growth surfaces characterized by different in-plane a-lattice parameters and different InN mole fractions. In.sub.xAl.sub.yGa.sub.1-x-yN semiconductor structures can be used in optoelectronic devices such as in light sources for illumination and in display applications.

A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from an edge of the second type conductive layer. An edge of the light emitting layer is aligned with an edge of the first type conductive layer. The edge of the first type conductive layer extends along the horizontal level away from the edge of the second type conductive layer.

Circuit boards, LED lighting systems and methods of manufacture are described. A circuit board includes a ceramic carrier and a body on the ceramic carrier. The body includes dielectric layers and slots formed completely through a thickness of the dielectric layers. The slots are filled with a dielectric material. A conductive pad is provided on a surface of each of the slots opposite the ceramic carrier.

A display apparatus including a display substrate, light emitting devices disposed on the display substrate, circuit electrodes disposed between the light emitting devices and the display substrate, and a transparent layer covering the light emitting devices and the circuit electrodes, in which at least one of the light emitting devices includes a first LED sub-unit configured to emit light having a first wavelength, a second LED sub-unit adjacent to the first LED sub-unit and configured to emit light having a second wavelength, a third LED sub-unit adjacent to the second LED sub-unit and configured to emit light having a third wavelength, and a substrate disposed on the third LED sub-unit, in which a difference in refractive indices between the transparent layer and air is less than a difference in refractive indices between the substrate and a semiconductor layer of the third LED sub-unit.

A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.

The thickness of a display device including a touch sensor is reduced. Alternatively, the thickness of a display device having high display quality is reduced. Alternatively, a method for manufacturing a display device with high mass productivity is provided. Alternatively, a display device having high reliability is provided. Stacked substrates in each of which a sufficiently thin substrate and a relatively thick support substrate are stacked are used as substrates. One surface of the thin substrate of one of the stacked substrates is provided with a layer including a touch sensor, and one surface of the thin substrate of the other stacked substrate is provided with a layer including a display element. After the two stacked substrates are attached to each other so that the touch sensor and the display element face each other, the support substrate and the thin substrate of each stacked substrate are separated from each other.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.