A display apparatus includes a color filter substrate, a first encapsulation layer, a first bank layer, wavelength selective dimming patterns, color conversion patterns, a second encapsulation layer, a driving circuit substrate, a second bank layer and light emitting components. The wavelength selective dimming patterns are disposed in at least a portion of first openings of the first bank layer. The color conversion patterns are disposed in the first openings and on the wavelength selective dimming patterns. One wavelength selective dimming pattern includes a base material and scattering particles. The wavelength selective dimming pattern has a thickness within a range of 2 m to 10 m in a direction perpendicular to the color filter substrate. A volume ratio of the scattering particles to the wavelength selective dimming pattern falls within a range of 0.5% to 4.5%. Diameters of the scattering particles fall within a range of 80 nm to 200 nm.

A method for manufacturing a light-emitting device includes providing a layered body including a wavelength conversion layer, a light-transmissive layer disposed above the wavelength conversion layer, and a semiconductor layer disposed above the light-transmissive layer, separating the semiconductor layer into a plurality of semiconductor portions above the wavelength conversion layer by removing a part of the semiconductor layer; and singulating the layered body into a plurality of light-emitting devices by cleaving the wavelength conversion layer along a portion where the part of the semiconductor layer is removed.

A display device includes a first substrate, a transistor disposed on the first substrate, a light emitting device connected to the transistor, an encapsulation layer covering the light emitting device, a plurality of banks disposed to overlap the encapsulation layer in a plan view and partitioning a first emission area, a second emission area, and a third emission area, a first color conversion layer disposed in the first emission area, a second color conversion layer disposed in the second emission area, and a transmission layer disposed in the third emission area. A thickness of at least one of the first color conversion layer or the second color conversion layer is greater than a thickness of the plurality of banks.

A light-emitting diode 100 includes a first region 1, for example of the P type, formed in a first layer 10 and forming, in a direction normal to a basal plane, a stack with a second region 2 having at least one quantum well formed in a second layer 20, and including a third region 3, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions 1, 2, through the first and second layers 10, 20. A process for producing a light-emitting diode 100 in which the third region 3 is formed by implantation into and through the first and second layers 10, 20.

A color conversion panel includes light blocking members spaced apart from each other on a substrate; and a first color conversion layer, a second color conversion layer, and a transmission layer respectively disposed between the light blocking members, wherein the transmission layer includes first quantum dots, and the first quantum dots convert incident light into light having a wavelength in a range of about 480 nm to about 530 nm.

A display apparatus includes a driving backplane, a first bank layer, light-emitting elements, a second bank layer, light adjusting patterns, a light-shielding pattern layer and color filter patterns. The color filter patterns includes first color filter patterns having the same color. The light-emitting elements include first light-emitting elements respectively overlapping the first color filter patterns. The light adjusting patterns include first color conversion patterns respectively overlapping the first color filter patterns. A center wavelength of one of the first light-emitting elements is greater than a center wavelength of another one of the first light-emitting elements, and a thickness of one of the first color conversion patterns is greater than a thickness of another one of the first color conversion patterns.

A method for depositing patterned phosphor films comprises using a patterned polymer film as a mask to block phosphor deposition, or allow subsequent removal of deposited phosphor, from selected areas of a device surface covered by the polymer film. The method generally comprises disposing the patterned polymer film mask on the device, subsequently depositing the phosphor, and then removing the mask and any phosphor deposited on the mask from the device. The polymer film may be deposited in the desired mask pattern or patterned after deposition.

Disclosed are a semiconductor structure and a manufacturing method for the semiconductor structure. The semiconductor structure includes a light-emitting structure; a light control layer disposed on a side of the light-emitting structure, including a plurality of light control regions regularly arranged and a substrate structure located between the plurality of light control regions; where the plurality of light control regions include a wavelength conversion structure, and the wavelength conversion structure includes a quantum dot and a porous structure adsorbed with the quantum dot. In the present disclosure, the plurality of light control regions and the substrate structure are provided to ensure uniform light output, good directionality, high light extraction rate, and avoidance of light crosstalk in each light control region. The porous structure is utilized to adsorb the quantum dot and achieve a full color display, thereby improving resolution, simplifying a manufacturing process and reducing costs.

A light-emitting device is provided. The light-emitting device includes a circuit board and a connection board disposed on the circuit board and having a first pad, a second pad, and a third pad. The light-emitting device also includes a first light-emitting element disposed on the connection board and having a first electrode and a second electrode and a second light-emitting element adjacent to the first light-emitting element and having a third electrode and a fourth electrode. The light-emitting device further includes a light-converting layer disposed on the first light-emitting element and the second light-emitting element. The thermal expansion coefficient of the connection board is smaller than the thermal expansion coefficient of the circuit board.

A wavelength conversion unit arrangement includes a carrier and a wavelength conversion unit. The wavelength conversion unit includes a wavelength conversion layer and a filter layer, and the filter layer attaches the wavelength conversion unit to the carrier. The filter layer has a first surface facing the carrier and a second surface opposite the first surface, and the first surface and the second surface have different textures.