A semiconductor LED includes p-doped, n-doped, and active layers, and has anode and cathode electrical contacts. The p-doped layer has a refractive index of n.sub.P and a nonzero thickness less than 10.sub.0/n.sub.P. The LED is less than 30.sub.0/n.sub.P wide, and the anode electrical contact is in direct contact with only a central region of the p-doped layer that is separated from the LED side surfaces by more than .sub.0/2n.sub.P. The LED width, the separation of the anode contact from the LED side surface, and the p-doped layer thickness can result in one or more of (i) increased Purcell factor, (ii) increased extraction efficiency, (iii) increased overall light output efficiency, or (iv) narrowed light output angular distribution.

The present invention provides a display device using a semiconductor light-emitting element and a manufacturing method therefor, the display device transferring semiconductor light-emitting elements on a temporary substrate, and then directly implementing, through a stack process, the structure of a wiring substrate on the temporary substrate on which the semiconductor light-emitting elements are arrayed, thereby enabling the semiconductor light-emitting elements and the wiring substrate to be electrically connected.

A display device includes a base substrate, a partitioning wall on the base substrate, wherein the partitioning wall includes a first partitioning wall, and a second partitioning wall on the first partitioning wall, and a light emitting element spaced from the partitioning wall and located in a space surrounded by the partitioning wall in a plan view. The first partitioning wall and the light emitting element include a same material. The second partitioning wall includes a transparent conductive oxide.

A method for fabricating epitaxial light control features, without reactive ion etching or wet etching, when active layers are included. The epitaxial light control features comprise light extraction or guiding structures integrated on an epitaxial layer of a light emitting device such as a light emitting diode. The light extraction or guiding structures are fabricated on the epitaxial layer using an epitaxial lateral overgrowth (ELO) technique. The epitaxial light control features can have many different shapes and can be fabricated with standard processing techniques, making them highly manufacturable at costs similar to standard processing techniques.

A display device includes a circuit substrate and at least one light emitting diode (LED) packaging structure electrically connected to the circuit substrate. Each of the at least one LED packaging structure includes a plurality of LEDs, a plurality of transparent packaging structures, a molding layer, a redistribution structure and a common electrode. Each LED includes a first electrode, a semiconductor stack structure and a second electrode stacked with each other. The transparent packaging structures respectively surround the LEDs. The molding layer surrounds the transparent packaging structures. The redistribution structure is located on a first side of the molding layer and is electrically connected to the first electrodes of the LEDs. The common electrode is located on a second side of the molding layer and is electrically connected to the second electrodes of the LEDs.

A light-emitting device is provided. The light-emitting device includes a circuit board and a connection board disposed on the circuit board and having a first pad, a second pad, and a third pad. The light-emitting device also includes a first light-emitting element disposed on the connection board and having a first electrode and a second electrode and a second light-emitting element adjacent to the first light-emitting element and having a third electrode and a fourth electrode. The light-emitting device further includes a light-converting layer disposed on the first light-emitting element and the second light-emitting element. The thermal expansion coefficient of the connection board is smaller than the thermal expansion coefficient of the circuit board.

Provided are a display panel and a display device. The display panel includes isolation columns and a partition insulating layer. The partition insulating layer is disposed on at least one of a first side surface of the isolation column facing a hole region or a second side surface of the isolation column facing away from the hole region.

A light emitting device including first, second, and third light emitting stacks each including first and second conductivity type semiconductor layers, a first lower contact electrode in ohmic contact with the first light emitting stack, and second and third lower contact electrodes respectively in ohmic contact with the second conductivity type semiconductor layers of the second and third light emitting stacks, in which the first lower contact electrode is disposed between the first and second light emitting stacks, the second and third lower contact electrodes are disposed between the second and third light emitting stacks, and the first, second, and third lower contact electrodes include transparent conductive oxide layers.

The present disclosure provides a display apparatus, a display panel and a method of preparing the same. A display panel includes: a base substrate; and a plurality of light-emitting units provided on the base substrate, where each of the light-emitting units includes a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second electrode which are stacked, the first electrode is provided on a side of the second electrode facing away from the base substrate, and the plurality of light-emitting units share a common first electrode. The present disclosure can improve display resolution.

The present relates to a micro LED display device and a method for manufacturing the micro LED display device, wherein micro LEDs and a drive substrate can be stably bonded without a reduction in light extraction efficiency. The micro LED display device a drive substrate having a first pad and a second pad that are connected to different potentials; and micro LEDs having a light-emitting structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked, an n-type pad electrically connecting the n-type semiconductor layer and the first pad, and a p-type pad electrically connecting the p-type semiconductor layer and the second pad. One of the n-type pad or the p-type pad may be provided on a side surface of the light-emitting substrate.