An electronic device includes a first substrate, a first circuit layer, a semiconductor chip, and a transparent conductive layer. The first circuit layer is disposed on the first substrate. The semiconductor chip is disposed on the first substrate and electrically connected to the first circuit layer. The semiconductor chip includes a semiconductor die, a filling layer, and a reflective layer. The semiconductor die has a surface and another surface opposite to the surface. The filling layer surrounds the semiconductor die. The reflective layer is disposed on the filling layer and the semiconductor die. The reflective layer includes a first part and a second part. The first part is disposed on the surface of the semiconductor die. The second part is disposed on the filling layer. The conductive layer is disposed on the another surface of the semiconductor die and connects to the second part.

A light emitting device including first, second, and third light emitting stacks each including first and second conductivity type semiconductor layers, a first lower contact electrode in ohmic contact with the first light emitting stack, and second and third lower contact electrodes respectively in ohmic contact with the second conductivity type semiconductor layers of the second and third light emitting stacks, in which the first lower contact electrode is disposed between the first and second light emitting stacks, the second and third lower contact electrodes are disposed between the second and third light emitting stacks, and the first, second, and third lower contact electrodes include transparent conductive oxide layers.

Disclosed are a display substrate, driving method and a display device. The display substrate includes: a substrate base including a first display area and a second display area; the plurality of light-emitting devices include a plurality of first light-emitting devices in the first display area and a plurality of second light-emitting devices in the second display area, and the density of the plurality of first light-emitting devices in the first display area is less than or equal to that of the plurality of second light-emitting devices in the second display area; and the plurality of ambient sensors are in the first display area and below at least part of the first light-emitting devices, and the orthographic projections of the ambient sensor on the substrate base covers and is greater than the orthographic projections of the corresponding first light-emitting devices on the substrate base.

A MicroLED display panel includes a plurality of display structures, where each display structure includes a first electrode, a second electrode, a first semiconductor layer, a second semiconductor layer, and a light emitting layer; first electrodes, first semiconductor layers, and light emitting layers of adjacent display structures are independent of each other; the first semiconductor layer and the second semiconductor layer are respectively located on surfaces of two sides of the light emitting layer; the first electrode is located on a side that is of the first semiconductor layer and that is away from the light emitting layer, and the second electrode is located on a side that is of the second semiconductor layer and that is away from the light emitting layer; the light emitting layer of each display structure corresponds to one pixel region; and the second electrode is routed around each pixel region.

A stretchable display device includes a base substrate having a rigid portion and a soft portion; a stretchable line in the soft portion over the base substrate; a first electrode and a second electrode in the rigid portion over the base substrate; and a light-emitting element contacting the first electrode and the second electrode, wherein the first electrode and the second electrode have a plurality of first protrusions and a plurality of second protrusions, and the light-emitting element is in contact with the plurality of first protrusions and the plurality of second protrusions.

A display device can include a substrate having a plurality of first sub pixels and a plurality of second sub pixels, a plurality of first light emitting diodes disposed in the plurality of first sub pixels and configured to emit light to one surface of the substrate, and a plurality of second light emitting diodes disposed in the plurality of second sub pixels and configured to emit light to an opposite surface to one surface of the substrate. The plurality of first light emitting diodes and the plurality of second light emitting diodes are alternately disposed on the plane. Accordingly, light is emitted to opposite surfaces of the substrate to display images on the opposite surfaces of the substrate.

In accordance with one or more aspects of the present disclosure, an apparatus incorporating micro-LEDs is provided. The apparatus may include a first plurality of light-emitting devices for emitting light of a first color, a second light-emitting device for emitting light of a second color, and a light-conversion structure that converts light emitted by at least one of the first plurality of light-emitting devices into light of a third color. The first plurality of light-emitting devices may be fabricated on a substrate. The second light-emitting device is fabricated on a conductive via that is fabricated on the substrate. The light-conversion structure may include a plurality of quantum dots.

Arrays of light emitting diode (LED) devices in which each LED device includes a mesa having a top surface and at least one sidewall defining a trench having a bottom surface. The mesa comprises semiconductor layers including an n-type layer, an active layer, and a P-type layer, and an electrically conductive material fills the trench. An n-contact, which can be a transparent conductive oxide (TCO) layer, lines an entire surface of the sidewall and trench bottom, and a dielectric layer lines an entire length of the TCO layer, such that the dielectric layer optically isolates the trench and the n-contact functions as an n-contact and spreading layer.

The present invention relates to a vertically stacked LEDoS micro display panel and a manufacturing method therefor, in which an engineering monolithic epitaxy wafer is used when bonding a front wafer and a back wafer to each other, thus making a process for aligning an LED laminate with a CMOS electrode pad unnecessary, and at the same time, each LED laminate emits only light of a specific color, thus making a color filter unnecessary.

The present invention relates to a vertically-laminated microdisplay panel requiring no color filter, the panel comprising: a back wafer, the top surface of which has multiple CMOS electrode pads aligned thereon; multiple LED laminates, each of which includes multiple light emitting units and multiple bonding layers vertically laminated on the back wafer, and which are aligned on the multiple CMOS electrode pads, respectively; and a common electrode formed on the multiple LED laminates, wherein each of the multiple LED laminates emits only a particular color by having a short passage formed through at least one light emitting unit among the multiple light emitting units to bypass current so as to prevent the current from being injected into the light emitting unit.