An electronic device includes a first substrate, a first circuit layer, a semiconductor chip, and a transparent conductive layer. The first circuit layer is disposed on the first substrate. The semiconductor chip is disposed on the first substrate and electrically connected to the first circuit layer. The semiconductor chip includes a semiconductor die, a filling layer, and a reflective layer. The semiconductor die has a surface and another surface opposite to the surface. The filling layer surrounds the semiconductor die. The reflective layer is disposed on the filling layer and the semiconductor die. The reflective layer includes a first part and a second part. The first part is disposed on the surface of the semiconductor die. The second part is disposed on the filling layer. The conductive layer is disposed on the another surface of the semiconductor die and connects to the second part.

Disclosed is a refrigerator including a storage compartment, a door configured provided on the storage compartment and configured to open and close, and a display provided on the door and including an electrocaloric material and a light-scattering material, wherein the display is configured to release heat from the storage compartment to the outside of the storage compartment upon determination that a voltage applied to the electrocaloric material and the light-scattering material is a first voltage less than a specified voltage and configured to reduce scattering of light incident on the display upon determination that a voltage applied to the electrocaloric material and the light-scattering material is a second voltage greater than the specified voltage.

A semiconductor light emitting device may be provided that reduces product defects of a light emitting device by including a distributed Bragg reflector disposed at an edge of a light emitting structure, while improving the luminous efficiency of the light emitting device.

A light emitting apparatus and a light emitting module including the same, and, more particularly, a light emitting apparatus including a light emitting device and a molding layer covering the light emitting device, and a light emitting module including the same. The light emitting apparatus includes a substrate, at least one light emitting device disposed on a surface of the substrate, a first molding layer covering at least a region of the light emitting devices, and a second molding layer surrounding an outer periphery of the substrate.

A light-emitting device that emits output light, is a light-emitting device that includes: a light-emitting element that emits a primary light; and a wavelength converter that converts at least a portion of the primary light into a secondary light. The output light includes at least a portion of the secondary light. The output light has a light intensity greater than or equal to a predetermined value throughout an entire wavelength range of from 750 nm to 900 nm, inclusive. A ratio of a light intensity of the output light at 900 nm to a light intensity of the output light at 750 nm is greater than or equal to 0.2 and less than 3.0. The output light has a spectral luminosity of at least 0.1 lm/W and at most 10 lm/W.

A light emitting diode may include an emission layer, a first electrode on a first surface of the emission layer, and a second electrode on the first surface of the emission layer and spaced apart from the first electrode at an interval, wherein the first electrode and the second electrode protrude further than an outer portion of the light emitting layer.

A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided by the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a photonic crystal structure array. The photonic crystal structure array formed through the mesa structure from top to bottom, thereby realizing higher directional light emission, simpler structure and lower cost.

A display substrate, a display panel, and preparation methods thereof. The display substrate includes a base substrate, a bonding pad, and an insulating layer. The bonding pad is located on one side of the base substrate and includes at least two bonding pad layers stacked in a thickness direction of the base substrate. The insulating layer is located between adjacent two of the bonding pad layers, and the insulating layer includes a via. In adjacent two of the bonding pad layers, the bonding pad layer on the side away from the base substrate extends into the via and is electrically connected to the bonding pad layer on the side close to the base substrate.

A wiring substrate includes a substrate and connection wires. At least one connection wire including a first connection end and another at least one connection wire including a second connection end, together define at least one bonding pad group. A bonding pad group is located in a region where a pair of first and second connection ends proximate to each other are located, and includes: at least one first sub-bonding pad, which is a portion of the first connection end, and at least two second sub-bonding pads, which are a portion of the second connection end. In the at least one first sub-bonding pad and the at least two second sub-bonding pads, a first sub-bonding pad is arranged adjacent to a second sub-bonding pad along a first direction, and arranged adjacent to another second sub-bonding pad along a second direction intersecting the first direction.

A white light emitting device with an efficiency of at least 230 lm/W at a blue LED chip input current density from 10 to 60 mA/mm.sup.2, preferably in the range from 15 to 40 mA/mm.sup.2 and more preferably in the range from 20 to 30 mA/mm.sup.2. The device comprises a substrate, at least one string of blue LED chips mounted on the substrate and a phosphor material composition. Said phosphor material composition comprises a narrow band red phosphor which generates light with a peak emission wavelength in a range from 625 nm to 635 nm. The weight percentages of the narrow band red phosphor are between 33 to 49 wt. % for a CCT of from 4000 to 6500K or in an amount of from 60 to 70 wt. % for a CCT of from 2700 to 3500K CCT.