Light sources including one or more light emitting diodes (LEDs) comprise a down converter material on the one or more LEDs; and a functional material that is laser-patterned on the down converter material. The functional material may be a distributed Bragg reflector (DBR). a dichroic filter (DCF), a ceramic material, or a powdered phosphor layer. The down converter material may comprise a polycrystalline ceramic plate of a phosphor material. A method of manufacturing a light source comprises: patterning a functional material of a light source comprising one or more light emitting diodes and a phosphor material.

A display device includes a bank including an opening defining pixels, light emitting elements disposed in the pixels, a color conversion layer disposed on the light emitting elements in the opening, a capping layer overlapping the color conversion layer, and a color filter layer disposed on the capping layer. The color filter layer includes a low refractive material.

The invention relates to a method for manufacturing an optoelectronic device (1) with a diode array (20), including the following steps: producing an electret layer (30) having conversion zones (Zc) separated two-by-two by a spacing zone (Ze) with zero surface potential, where each conversion zone (Zc) is formed of a plurality of so-called polarized elementary zones (32) with non-zero surface potential, spaced apart two-by-two by a so-called non-polarized elementary zone (33) with zero surface potential, such that the conversion zone (Zc) has a structured surface potential; producing color conversion pads (P), by placing the electret layer (30) in contact with a colloidal solution(S) containing photoluminescent particles (p).

An optoelectronic device, comprising a stack including a plurality of light-emitting diodes disposed at a distance from one another, and a plurality of electrically conductive terminals arranged between the diodes, and a light confinement layer extending over the stack and comprising reflective walls defining between them, spaces located to the right of each diode. Further, the confinement layer includes the porous alumina in at least one of the spaces, the porous alumina having, in at least one space, preferably in at least two of the spaces, even in each space, from among the at least some spaces, at least two open pores on a first face of the confinement layer which is located opposite the stack. The optical crosstalk phenomena are advantageously reduced.

A display device includes a bank including an opening defining pixels, light emitting elements disposed in the pixels, a color conversion layer disposed on the light emitting elements in the opening, a capping layer overlapping the color conversion layer, and a color filter layer disposed on the capping layer. The color filter layer includes a low refractive material.

The present application discloses a manufacturing method for a display module and a display screen. The method includes: forming a semiconductor device by pre-processing a semiconductor epitaxial wafer; forming a first transparent layer on a substrate surface of the semiconductor device; forming a first opening exposing the substrate by etching the first transparent layer; forming a first quantum dot layer on the substrate surface exposed by the first opening and the surface of the first transparent layer; etching away the first quantum dot layer in the outer region of the first opening, and remaining the first quantum dot layer inside the first opening; and forming a DBR film layer that filters blue light.