A composition comprising: (a) a conductive polymer, (b) a resin having a solubility parameter of 9.0 to 12.0 (cal/cm.sup.3).sup.1/2, (c) a solvent, and (d) a phenolic compound.

A retinomorphic sensor is demonstrated employing organic semiconductors. The sensor produces an output voltage in response to changes in illumination, but zero output voltage under constant illumination. The device is stable for periods up to one hour, exhibits a decay constant tunable through choice of external resistor, with fastest response times below 10 μs.

A capacitor includes a first metal layer disposed on a wafer or substrate, a first polarized dielectric layer above the first metal layer and comprising a plurality of electrets formed by aligning molecular dipoles throughout a three-dimensional surface area of a polarizable dielectric material during polarization by applying a momentary electric field of positive or negative polarity, a second metal layer disposed on the first polarized dielectric layer to electrically isolate the first polarized dielectric layer, and a second polarized dielectric layer above the second metal layer, the second polarized dielectric layer comprising a plurality of electrets formed by aligning molecular dipoles throughout a three-dimensional surface area of a polarizable dielectric material during polarization by applying a second momentary electric field of opposing polarity. A plurality of alternating polarized dielectric layers and metal layers may be arranged in series to form a stack, with an internal passivation layer disposed between each stack.

A composition comprising: (a) a conductive polymer, (b) a resin having a solubility parameter of 9.0 to 12.0 (cal/cm.sup.3).sup.1/2, (c) a solvent, and (d) a phenolic compound.

A method of forming a high energy density capacitor comprises depositing a first metal layer on a substrate, depositing a first layer of polarizable dielectric material comprised of a high K dielectric material on said first metal layer, and applying a momentary high voltage electric field of positive or negative polarity above said first layer of polarizable dielectric material forming an electret. The method further comprises depositing a second metal layer on said first layer of polarizable dielectric material, depositing a second layer of polarizable dielectric material comprised of a high K dielectric material onto said second metal layer, and applying a second momentary high voltage electric field of opposing polarity above said second layer of polarizable dielectric material to align dipoles of the second layer into one or more electrets that will oppose a main electric field created as the capacitor is charging. The first and second metal layers are shorted to ground prior to applying said first and second momentary high voltage electric fields.

A flexible electronic component in this disclosure comprises a flexible fabric substrate and a smoothing layer formed on the flexible fabric substrate. A layer of nanoplatelets derived from a layered material is deposited on the smoothing layer by inkjet printing. The layer of nanoplatelets may form a first layer of a first nanoplatelet material and there may be provided at least a second layer, of a different nanoplatelet material, formed at least in part on the first layer. First and second electrodes are provided in contact respectively with the first and second layers.

A method of forming a high energy density capacitor comprises depositing a first metal layer on a substrate, depositing a first layer of polarizable dielectric material comprised of a high K dielectric material on said first metal layer, and applying a momentary high voltage electric field of positive or negative polarity above said first layer of polarizable dielectric material forming an electret. The method further comprises depositing a second metal layer on said first layer of polarizable dielectric material, depositing a second layer of polarizable dielectric material comprised of a high K dielectric material onto said second metal layer, and applying a second momentary high voltage electric field of opposing polarity above said second layer of polarizable dielectric material to align dipoles of the second layer into one or more electrets that will oppose a main electric field created as the capacitor is charging. The first and second metal layers are shorted to ground prior to applying said first and second momentary high voltage electric fields.

A capacitor structure includes two electrodes arranged oppositely and a dielectric layer located between the two electrodes, wherein the dielectric layer includes at least two perovskite layers stacked; an amorphous layer is provided between every two adjacent perovskite layers; two outermost perovskite layers of the at least two perovskite layers are in contact with the two electrodes, respectively.

A high energy density capacitor comprising a substrate, a positive electrode, a negative electrode, a plurality of intermediate dielectric layers disposed between the positive electrode and negative electrode, and a metal layer deposited on each of the intermediate dielectric layers. Each intermediate dielectric layer comprises sequential layers of a high surface area dielectric material, an electrolyte and a polar organic solvent deposited onto the substrate. The plurality of intermediate dielectric layers and metal layers are arranged in series to form a stack, and at least one an internal passivation layer is disposed between each stack. The positive and negative electrodes extend along a height of the capacitor and have poles in an alternating arrangement around an edge thereof, wherein the positive and negative electrodes are attached to periodic metal layers deposited on each of the intermediate dielectric layers. Dipoles of the intermediate dielectric layers are aligned in an opposite direction of an electric field created between the positive and negative electrodes while charging.

A capacitor structure includes two electrodes arranged oppositely and a dielectric layer located between the two electrodes, wherein the dielectric layer includes at least two perovskite layers stacked; an amorphous layer is provided between every two adjacent perovskite layers; two outermost perovskite layers of the at least two perovskite layers are in contact with the two electrodes, respectively.