A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.

Provided are a compound capable of improving the luminous efficiency, stability and lifespan of an organic electronic device employing the same, an organic electronic element employing the same, and an electronic device thereof.

According to principals as disclosed herein an organic, light emitting diode assembly is provided having a first electrode. An electron injection layer is adjacent to the first electrode. A first electron transport layer composed of inorganic material is adjacent to the electron injection layer. A second electron transport layer composed of organic material is adjacent to the first electron transport layer and in contact with an organic light emitting material layer. The organic light emitting material layer is in direct, abutting contact with the second electron transport layer. A hole transport layer is adjacent to the organic light emitting material layer and a second electrode is adjacent to the hole transport layer.

There is provided a compound which provides a semiconductor material. The compound is represented by General Formula (1) ##STR00001## wherein Ar represents an aryl group which may have a substituent or a heteroaryl group which may have a substituent, and R.sup.1 represents an acyclic alkyl group having 1 to 20 carbon atoms wherein hydrogen atom in the alkyl group may be replaced by a halogeno group, a nitrile group or an aryl group, and —CH.sub.2— in the alkyl group may be replaced by —O—, —R′C═CR′—, —CO—, —OCO—, —COO—, —S—, —SO.sub.2—, —SO—, —NH—, —NR′— or —C≡C— provided that, with respect to each of an oxygen atom, a sulfur atom and a nitrogen atom, the same atoms are not directly bonded to each other, wherein R′ represents an acyclic or cyclic alkyl group having 1 to 20 carbon atoms.

An object of the present invention is to provide a method for accurately forming an antenna substrate as well as an antenna substrate with wiring line and electrode by a coating method. One aspect of the present invention provides a method for producing an antenna substrate with wiring line and electrode including the steps of: (1) forming a coating film using a photosensitive paste containing a conductive material and a photosensitive organic component on an insulating substrate; (2-A) processing the coating film into a pattern corresponding to an antenna by photolithography; (2-B) processing the coating film into a pattern corresponding to a wiring line; (2-C) processing the coating film into a pattern corresponding to an electrode; (3-A) curing the pattern corresponding to an antenna into an antenna; (3-B) curing the pattern corresponding to a wiring line into a wiring line; and (3-C) curing the pattern corresponding to an electrode into an electrode.

The present invention is to provide a semiconductor element achieving a high-level detection sensitivity when utilized as a sensor. The present invention relates to a semiconductor element including an organic film, a first electrode, a second electrode, and a semiconductor layer, in which the first electrode, the second electrode and the semiconductor layer are formed on the organic film, the semiconductor layer is arranged between the first electrode and the second electrode, the semiconductor layer contains a carbon nanotube, and the organic film has a water contact angle of 5° or more and 50° or less.

Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat. Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm. ##STR00001## X, Y, and Z each independently represent a specific ring-constituting atom. R.sup.1 and R.sup.2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. R.sup.3 and R.sup.4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.

An organic semiconductor element functions as a strain sensor, and includes a substrate and an organic semiconductor layer formed on the substrate as a single-crystal thin film of an organic semiconductor that is a polycyclic aromatic compound with four or more rings or a polycyclic compound with four or more rings including one or a plurality of unsaturated five-membered heterocyclic compounds and a plurality of benzene rings. Since the organic semiconductor layer is formed as the single-crystal thin film, an identical crystal structure is obtained regardless of formation technique. Therefore, when the same strain is given, the same carrier mobility is obtained and uniform property is obtained with respect to the strain. Accordingly, it is possible to provide strain sensors having uniform property.

Provided is a composition for manufacturing an organic semiconductor device, the composition enabling formation of an organic semiconductor device that stably shows high carrier mobility. A composition for manufacturing an organic semiconductor device contains 2,3-dihydrobenzofuran as a solvent and an organic semiconductor material below, in which the water content of the solvent is 0.25 wt % or less. The organic semiconductor material: at least one compound selected from the group consisting of a compound represented by formula (1-1), a compound represented by formula (1-2), a compound represented by formula (1-3), a compound represented by formula (1-4), a compound represented by formula (1-5), and a compound represented by formula (1-6). ##STR00001##
wherein X.sup.1 and X.sup.2 are the same or different and each represent an oxygen atom, a sulfur atom, or a selenium atom, m is 0 or 1, n.sup.1 and n.sup.2 are the same or different and each represent 0 or 1, and R.sup.1 and R.sup.2 are the same or different and each represent a fluorine atom, a C.sub.1-20 alkyl group, a C.sub.6-13 aryl group, a pyridyl group, a furyl group, a thienyl group, or a thiazolyl group, in which 1 or 2 or more hydrogen atoms contained in the alkyl group may be substituted by a fluorine atom, and in which 1 or 2 or more hydrogen atoms contained in the aryl group, the pyridyl group, the furyl group, the thienyl group, and the thiazolyl group may be substituted by a fluorine atom or an alkyl group having 1 to 10 carbon atoms.

A thermal transistor is provided. The thermal transistor includes a metallic thermal conductor, a non-metallic thermal conductor, and a thermal resistance adjusting unit. The metallic thermal conductor and the non-metallic thermal conductor are contact with each other to form a thermal interface. The thermal resistance adjusting unit is configured to generate an bias voltage U.sub.12 between the metallic thermal conductor and the non-metallic thermal conductor.