A memory device includes a memory cell and a controller. The memory cell includes: (a) an array of molecule chains, at least one molecule chain includes: (i) first and second binding sites positioned at first and second ends of the molecule chain, respectively, and (ii) a chain of one or more fullerene derivatives, chemically connecting between the first and second binding sites, (b) source and drain electrodes, electrically connected to the first and second binding sites, respectively, and configured to apply to the array a source-drain voltage (VSD) along a first axis, and (c) a gate electrode, configured to apply to the array a gate voltage (VG) along a second different axis. The controller is configured to perform a data storage operation in the memory cell by (i) applying to the gate electrode a signal for producing the VG, and (ii) applying the VSD between the source and drain electrodes.

An apparatus comprising: a module; a substrate; and electrolyte between the module and the substrate, wherein an electronic component is formed between the module and the substrate and wherein the electrolyte is configured to function as the electrolyte in the electronic component and also as the adhesive to attach the module to the substrate.

In a matrix device having two or more systems of electrode groups such as X and Y systems, the one or more electrode groups are grouped into groups each consisting of a plurality of pixel electrodes, connection wires are branched off and connected to the pixel electrodes so that the same signal is not supplied to the pixel electrodes of the same group but the same signal is supplied to one pixel electrode of two or more groups, switching elements are provided corresponding to the individual pixel electrodes, and a gate electrode and a gate insulating film of the switching elements are used in common in the same group. Accordingly, in the matrix device and manufacturing of the matrix device, the number of connection wires and driver ICs is reduced.

A ratiometric vapor sensor is described that includes a first sensor and a second sensor. The first sensor includes a first semiconductor component comprising a vapor-sensitive semiconducting organic compound, while the second sensor includes a second semiconductor component comprising a modified vapor-sensitive semiconducting organic compound including a modifying organic group. The ratiometric vapor sensor can be used to detect the presence of a vapor such as nitrogen dioxide, and determine the concentration of the vapor by comparing the outputs of electrodes connected to the first and second sensor.

A transistor structure is presented comprising: an organic semiconductor channel region, and source and drain electrodes in electrical contact with said organic semiconductor channel region, wherein at least one of said source and drain electrodes is formed by spaced apart regions of a first metallic material separated by regions of a second metallic material such that regions of the first and second metallic materials are in contact with the organic semiconductor channel region, said first metallic material being selected as having work function substantially similar to HOMO energy level of said organic semiconductor channel region and said second metallic material being selected as having work function substantially similar to LUMO energy level of said organic semiconductor channel region, thereby enabling selective injections of electrons or holes into said channel region.

A transistor structure is presented comprising: an organic semiconductor channel region, and source and drain electrodes in electrical contact with said organic semiconductor channel region, wherein at least one of said source and drain electrodes is formed by spaced apart regions of a first metallic material separated by regions of a second metallic material such that regions of the first and second metallic materials are in contact with the organic semiconductor channel region, said first metallic material being selected as having work function substantially similar to HOMO energy level of said organic semiconductor channel region and said second metallic material being selected as having work function substantially similar to LUMO energy level of said organic semiconductor channel region, thereby enabling selective injections of electrons or holes into said channel region.

Photocurable compositions that combine redox-active semiconducting organic polymers with photocurable organic molecules are provided. Upon exposure to radiation, the photocurable compositions form ion-permeable, electrically conductive crosslinked organic films that can be used as conducting channels in n-channel or p-channel organic electrochemical transistors, including vertical organic electrochemical transistors (vOECTs). The vOECTs can be incorporated in complementary electronic circuits.

A technique, comprising: forming in situ on a support substrate: a first metal layer; a light-absorbing layer after the first metal layer; a conductor pattern after the light-absorbing layer; and a semiconductor layer after the conductor pattern; patterning the semiconductor layer using a resist mask to form a semiconductor pattern defining one or more semiconductor channels of one or more semiconductor devices; and patterning the light-absorbing layer using the resist mask and the conductor pattern, so as to selectively retain the light-absorbing layer in regions that are occupied by at least one of the resist mask and the conductor pattern.

An integrated circuit including a first circuit module and a second circuit module is provided. A layer stack may include one or multiple metal layers with a power segment and a ground segment connected to the first circuit module and the second circuit module, which form a resonant current loop. A pickup loop may be inductively coupled to the resonant current loop to dampen its resonance, thereby making the IC compliant with its EMC requirements or removing functional errors such as problems in the signal or power integrity.

The present disclosure provides a display panel, a manufacturing method thereof and a display device. The display panel includes a substrate, a pixel structure layer on the substrate, and a sensor layer on a side of the pixel structure layer away from the substrate. The pixel structure layer includes a plurality of sub-pixels. At least one of the plurality of sub-pixels is configured to emit a first light. The sensor layer includes a photoelectric conversion device. The photoelectric conversion device is configured to receive a second light produced after the first light is reflected by an external object, and convert the second light into an electrical signal.