The present technology relates to an imaging element, a manufacturing method, and an electronic apparatus capable of forming a photoelectric conversion part in a steep impurity profile. Laminated first and second photoelectric conversion parts are provided between a first surface of a semiconductor substrate and a second surface opposite to the first surface, an impurity profile of the first photoelectric conversion part is a profile having a peak on the first surface side, and an impurity profile of the second photoelectric conversion part is a profile having a peak on the second surface side. A side on which an impurity concentration of the first photoelectric conversion part is low and a side on which an impurity concentration of the second photoelectric conversion part is low face each other. The present technology can be applied to, for example, an imaging element in which a plurality of photoelectric conversion parts are laminated in a semiconductor substrate.

An image sensor pixel includes a substrate having a pixel electrode on a light receiving surface thereof, and a photoelectric conversion layer including a perovskite material, on the pixel electrode. A transparent electrode is provided on the photoelectric conversion layer, and a vertical electrode is provided, which is electrically connected to the pixel electrode and extends at least partially through the substrate. The photoelectric conversion layer includes a perovskite layer, a first blocking layer extending between the pixel electrode and the perovskite layer, and a second blocking layer extending between the transparent electrode and the perovskite layer. The perovskite material may have a material structure of ABX.sub.3, A.sub.2BX.sub.4, A.sub.3BX.sub.5, A.sub.4BX.sub.6, ABX.sub.4, or A.sub.n−1B.sub.nX.sub.3n+1, where: n is a positive integer in a range from 2 to 6; A includes at least one material selected from a group consisting of Na, K, Rb, Cs and Fr; B includes at least one material selected from a divalent transition metal, a rare earth metal, an alkaline earth metal, Ga, In, Al, Sb, Bi, and Po; and X includes at least one material selected from Cl, Br, and I.

A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.

A selection transistor and a light-emitting transistor are formed in a pixel. The selection transistor includes a gate electrode connected to a scan line, a first source/drain electrode connected to a signal line, and a second source/drain electrode. The light-emitting transistor includes a gate electrode connected to the second source/drain electrode of the selection transistor, a first electrode connected to a first line, a second electrode connected to a second line, and a channel layer including quantum dots. The light-emitting transistor controls the quantum dots to emit light by a carrier flowing through the channel layer.

An image sensor includes a plurality of pixels, each pixel including a light sensing structure including first, second and third light sensing elements sequentially stacked on a substrate, the light sensing structure having a first surface adjacent to a readout circuit and a second surface including a light receiving portion between first and second circumferential portions, a first through via on the first circumferential portion, extending from the first surface to connect with the first light sensing element, and configured to transfer charges of the first light sensing element to the readout circuit, and a vertical transfer gate on a second circumferential portion and configured to transfer charges of the second light sensing element to the readout circuit, the first through via and the vertical transfer gate of each pixel being arranged in a 1-shaped or L-shaped pattern in the first and second circumferential portions.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: ##STR00001## In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: ##STR00001## In Chemical Formula 1, each substituent is the same as defined in the detailed description.

There is provided a solid-state imaging device that includes a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

Embodiments of the disclosed subject matter provide a full-color pixel arrangement for a full-color display is provided, the arrangement having a plurality of pixels, with each pixel including a first sub-pixel comprising a Group III-V inorganic emissive thin film configured to emit light of a first color, where there is at least one first sub-pixel per pixel of the full-color pixel arrangement. Each pixel may include an organic second sub-pixel and an organic third sub-pixel that are configured to emit light of a different color than the first color.

Embodiments of the disclosed subject matter provide a full-color pixel arrangement for a full-color display is provided, the arrangement having a plurality of pixels, with each pixel including a first sub-pixel comprising a Group III-V inorganic emissive thin film configured to emit light of a first color, where there is at least one first sub-pixel per pixel of the full-color pixel arrangement. Each pixel may include an organic second sub-pixel and an organic third sub-pixel that are configured to emit light of a different color than the first color.