The present disclosure provides an optical-sensing device, a manufacturing method thereof, and a display panel. The optical-sensing device includes a sensor TFT disposed on a substrate and a switch TFT connected with the sensor TFT. The sensor TFT and the switch TFT include a first active layer and a second active layer, the first active layer comprises a first IGZO layer and a perovskite layer disposed on the first IGZO layer, and the second active layer comprises a second IGZO layer.

A photo detector is provided with a metal, a semiconductor, a first electrode, and a second electrode. In addition, a pre-treatment and/or a post-treatment is performed to the photo detector to reduce its noise and hence improves the signal-to-noise ratio (SNR). The provided photo detector can quickly respond to short mid-infrared light and generate low noise and high SNR currents.

A two-dimensional (2D) hybrid perovskite based opto-electric device includes first and second 2D perovskite layers extending along a given plane; an organic layer sandwiched between the first and second 2D perovskite layers, and extending along the given plane; an external organic layer formed on the first 2D perovskite layer and configured to directly face an ambient of the opto-electric device and to extend along the given plane; and electrical pads directly formed over the external organic layer. A roughness of the external organic layer is smaller than 10 nm.

A carbon based material, an optical rectenna and a semiconductor device including the same are provided. The carbon based material includes a carbon nanomaterial and a metal material bonded to the carbon nanomaterial, where the carbon nanomaterial includes a fluorine material.

The present invention relates to a semiconductor structure. The semiconductor structure comprises a semiconductor layer, at least one metallic carbon nanotube, and at least one graphene layer. The semiconductor layer defines a first surface and a second surface opposite to the first surface. The at least one metallic carbon nanotube is located on the first surface of the semiconductor layer. The at least one graphene layer is located on the second surface of the semiconductor layer. The at least one metallic carbon nanotube, the semiconductor layer and the at least one graphene layer are stacked with each other to form at least one three-layered stereoscopic structure. The present invention also relates a semiconductor device, and a photodetector.

Disclosed is an optoelectronic device including a first electrode and a second electrode facing each other; a metal layer pattern disposed between the first electrode and the second electrode; a buffer layer covering the metal layer pattern; and a photoelectric conversion layer on the buffer layer. The metal layer pattern includes a metal having a negative dielectric constant and the buffer layer includes a compound selected from silicon nitride (SiN.sub.x, 0<x<1), silicon oxynitride (SiO.sub.yN.sub.z, 0<y<0.5, 0<z1), P-doped silicon oxynitride (SiO.sub.yN.sub.z:P, 0<y<0.5, 0<z1), and a combination thereof.

Perovskite-based photoactive devices, such as solar cells, include an insulating tunneling layer inserted between the perovskite photoactive material and the electron collection layer to reduce charge recombination and concomitantly provide water resistant properties to the device.

A carbon based material, an optical rectenna and a semiconductor device including the same are provided. The carbon based material includes a carbon nanomaterial and a metal material bonded to the carbon nanomaterial, where the carbon nanomaterial includes a fluorine material.

A two-dimensional (2D) hybrid perovskite based opto-electric device includes first and second 2D perovskite layers extending along a given plane; an organic layer sandwiched between the first and second 2D perovskite layers, and extending along the given plane; an external organic layer formed on the first 2D perovskite layer and configured to directly face an ambient of the opto-electric device and to extend along the given plane; and electrical pads directly formed over the external organic layer. A roughness of the external organic layer is smaller than 10 nm.

The present invention relates to a semiconductor structure. The semiconductor structure comprises a semiconductor layer, at least one metallic carbon nanotube, and at least one graphene layer. The semiconductor layer defines a first surface and a second surface opposite to the first surface. The at least one metallic carbon nanotube is located on the first surface of the semiconductor layer. The at least one graphene layer is located on the second surface of the semiconductor layer. The at least one metallic carbon nanotube, the semiconductor layer and the at least one graphene layer are stacked with each other to form at least one three-layered stereoscopic structure. The present invention also relates a semiconductor device, and a photodetector.