Provided herein are small molecular acceptor compounds containing thiophene end groups, methods for their preparation and intermediates used therein, the use of formulations containing the same as semiconductors in organic electronic devices, especially in organic photovoltaic and organic field-effect transistor devices, and to organic electronic and organic photovoltaic devices made from these formulations.

The present invention relates to a working electrode (1a) for a photovoltaic device, comprising a light absorbing layer (3) and a conductive layer (6) arranged in electrical contact with the light absorbing layer (3), and the light absorbing layer (3) comprises a light absorbing photovoltaic material consisting of a plurality of dye molecules. The light absorbing layer (3) is formed by a layer of a plurality of clusters (7), whereby each cluster (7) is formed by dye molecules and each dye molecule in the cluster (7) is bonded to its adjacent dye molecules.

A photodetection device is configured to detect light and the photodetection device includes a substrate having a largest surface; a dielectric formed over the largest surface of the substrate; a first metallic electrode formed on the dielectric; a second metallic electrode formed on the dielectric, at a given distance from the first metallic electrode, to form a channel; and a single-crystal linear-chain polyfluorinated dibromo-platinum(II) diimine complex located in the channel.

An organic semiconductor detector for detecting radiation has an organic conducting active region, an output electrode and a field effect semiconductor device. The field effect semiconductor device has a biasing voltage electrode and a gate electrode. The organic conducting active region is connected on one side to the field effect semiconductor device and is connected on another side to the output electrode. The organic semiconductor detector has an option switching circuitry having a field effect semiconductor device and resistance.

Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected.

The present disclosure relates to a device that includes a perovskite nanocrystal (NC) layer, a charge separating layer, an insulating layer, a gate electrode, a cathode, and an anode, where the charge separating layer is positioned between the perovskite NC layer and the insulating layer, the insulating layer is positioned between the charge separating layer and the gate electrode, and the cathode and the anode both electrically contact the charge separating layer and the insulating layer. In some embodiments of the present disclosure, the device may be configured to operate as at least one of a photodetector, an optical switching device, and/or a neuromorphic switching device.

An optical sensor includes: a semiconductor layer including first and second regions; a gate electrode; a gate insulating layer including a photoelectric conversion layer; a voltage supply circuit; and a signal detection circuit connected to the first region. The photoelectric conversion layer has a photocurrent characteristic including first and second voltage ranges where an absolute value of a current density increases as an absolute value of a bias voltage increases, and a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in the first and second voltage ranges, The voltage supply circuit applies a predetermined voltage between the gate electrode and the second region such that the bias voltage falls within the third voltage range. The signal detection circuit detects an electrical signal corresponding to a change of a capacitance of the photoelectric conversion layer.

A photosensitive field-effect transistor which can be configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor. The field-effect transistor has a channel (13) made from a two-dimensional material and comprises a photoactive layer (22) which can be configured to donate charge carriers to the transistor channel (13) when electromagnetic radiation is absorbed in the photoactive layer (22). The photosensitive field-effect transistor comprises a top electrode (21) which is in contact with the photoactive layer on one or more contact areas which together form a contact pattern. With a suitably patterned top electrode (21), a voltage applied to the electrode can function as an electrical shutter which can switch the photosensitive field-effect transistor between a light-sensitive state and a light-immune state.

Method for determining oscillation parameters of turbo-machine blades consists in that when the blade tip travels in front of a sensor, reading values of a single pulsed signal formed by the sensor are obtained in a number that is not lower than that of unknown parameters of a harmonic or polyharmonic oscillation of the blade, the origin of a single pulsed signal readings obtained for each blade being synchronized with the blade tip position relative to the sensor according to a given level of the single pulsed signal; then the values of the harmonic or polyharmonic oscillation parameters of the blade are calculated with the use of the obtained values of the single pulsed signal reading origins and of the value of the turbo-machine shaft revolution period.

A composite for sensing heat or infrared light includes a block copolymer including a first structural group represented by Chemical Formula 1, a second structural group represented by Chemical Formula 2, and a third structural group represented by Chemical Formula 3; and a polyvalent metal ion that is coordinated with a side chain group of the block copolymer.

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