H10K30/81

PHOTOELECTRIC CONVERSION ELEMENT AND METHOD OF PRODUCING SAME
20230050182 · 2023-02-16 · ·

Provided are a photoelectric conversion element that displays excellent photoelectric conversion efficiency and is easy to produce and a method of producing this photoelectric conversion element. A photoelectric conversion element (100) includes, in stated order, a light-transmitting base plate (1), a transparent conductive film (2), a first conductive layer (5) formed of a base layer (3) and a porous semiconductor layer (4), a power-generating layer (6), and a second conductive layer (8). The second conductive layer (8) is formed of a porous self-supporting sheet that at least contains one or more single-walled carbon nanotubes.

Compound and film and IR sensor and combination sensor and electronic device

A compound is represented by Chemical Formula 1. The compound may be included in, a film, an infrared sensor, a combination sensor, and/or an electronic device. ##STR00001## In Chemical Formula 1, X, Y.sup.1, Y.sup.2, Z.sup.1, Z.sup.2, Q, R.sup.1, and R.sup.2 are the same as described in the detailed description.

Organic photoelectric conversion element, image pickup element, and image pickup apparatus

The present disclosure provides an organic compound represented by general formula [1] below. ##STR00001## In formula [1], Ar.sub.1 and Ar.sub.2 each represent an alkyl group having 1 to 8 carbon atoms, an aromatic hydrocarbon group having 6 to 18 carbon atoms, or a heteroaromatic group having 3 to 17 carbon atoms. Ar.sub.1 and Ar.sub.2 may be the same or different. Ar.sub.3 and Ar.sub.4 are each a substituent having a carbazolyl group. Ar.sub.3 and Ar.sub.4 may be the same or different. Ar.sub.1 to Ar.sub.4 may be substituted. At least one of Ar.sub.1 to Ar.sub.4 has a tert-butyl group. The total number of tert-butyl groups in one molecule of the organic compound is 2 or more.

Photoelectric conversion devices and organic sensors and electronic devices

A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an organic auxiliary layer between the first electrode and the photoelectric conversion layer and having a higher charge mobility than a charge mobility of the photoelectric conversion layer. An organic sensor may include the photoelectric conversion device. An electronic device may include the organic sensor.

Key materials for organic photovoltaics reliability

Organic photovoltaic cells (OPVs) and their compositions are described herein. one or more embodiments, the acceptor with an active layer of an OPV includes is a non-fullerene acceptor. Such non-fullerene acceptors may provide improved OPV performance characteristics such as improved power conversion efficiency, open circuit voltage, fill factor, short circuit current, and/or external quantum efficiency.

Key materials for organic photovoltaics reliability

Organic photovoltaic cells (OPVs) and their compositions are described herein. one or more embodiments, the acceptor with an active layer of an OPV includes is a non-fullerene acceptor. Such non-fullerene acceptors may provide improved OPV performance characteristics such as improved power conversion efficiency, open circuit voltage, fill factor, short circuit current, and/or external quantum efficiency.

Photoelectric conversion element including first electrode, second electrodes, photoelectric conversion film, and conductive layer and method for manufacturing the same

A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.

Photoelectric devices and image sensors and electronic devices

A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λ.sub.max1) of the first photoelectric conversion layer and a peak absorption wavelength (λ.sub.max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Photoelectric devices and image sensors and electronic devices

A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λ.sub.max1) of the first photoelectric conversion layer and a peak absorption wavelength (λ.sub.max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

PHOTOVOLTAIC ELEMENT WITH IMPROVED EFFICIENCY IN THE EVENT OF SHADE, AND METHOD FOR PRODUCING SUCH A PHOTOVOLTAIC ELEMENT
20230005992 · 2023-01-05 ·

A photovoltaic element including at least one photovoltaic cell at least partially segmented and having a base electrode, a top electrode, and a layer system comprising at least one photoactive layer, wherein the layer system is arranged between the base electrode and the top electrode, the segments are configured such that at least the top electrode and the layer system of one of the segments are separated from the top electrode and the layer system of another segment by at least one cavity to prevent contact between one another, the at least one cavity is formed substantially vertically relative to the layer system of the at least one photovoltaic cell, and the segments are electrically conductively connected in parallel with one another such that a flow of electric current through the at least one photovoltaic cell is distributed over each of the segments.