An object of the present invention is to provide a photoelectric conversion element that includes a photoelectric conversion film excellent in the vapor deposition suitability, and that exhibits excellent external quantum efficiency to light at all wavelengths in a red wavelength range, a green wavelength range, and a blue wavelength range. Another object of the present invention is to provide an imaging element, an optical sensor, and a compound related to the photoelectric conversion element.

The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).

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The embodiments provide a process for easily producing an electrode having low resistance, easily subjected to post-process and hardly impairing the device; and also provide, as its application, a production process for a photoelectric conversion device. The process comprises the steps of: coating a hydrophobic substrate directly with a dispersion of metal nanomaterial, to form a metal nanomaterial layer, coating the surface of the metal nanomaterial layer with a dispersion of carbon material, to form a carbon material layer and thereby to form an electrode layer comprising a laminate of the metal nanomaterial layer and the carbon material layer, pressing the carbon material layer onto a hydrophilic substrate so that the surface of the carbon material layer may be directly fixed on the hydrophilic substrate, and peeling away the hydrophobic substrate so as to transfer the electrode layer onto the hydrophilic substrate.

An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

An infrared photodiode includes a first electrode including a reflective layer, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes an infrared absorbing material. A maximum absorption wavelength of the infrared absorbing material in a solution state is greater than about 700 nm and less than or equal to about 950 nm. The infrared photodiode is configured to exhibit an external quantum efficiency (EQE) spectrum in a wavelength region of greater than or equal to about 1000 nm.

A transparent photovoltaic device includes a transparent substrate, a transparent bottom electrode coupled to the transparent substrate, an active layer coupled to the transparent bottom electrode, and a transparent multilayer top electrode. The transparent multilayer top electrode includes a seed layer deposited on the active layer, a first metal layer deposited on the seed layer, an interconnect layer deposited on the first metal layer, and a second metal layer deposited on the interconnect layer. The transparent photovoltaic device is characterized by an average visible transmission (AVT) greater than 25% and a top electrode sheet resistance that is less than 100 Ohm/sq.

This relates to a device for detecting or converting light or heat energy, the device comprising: a Graphene sheet formed into a scroll such as to provide a monolayer structure in which the radius of curvature of the graphene sheet increases on increasing distance from the longitudinal axis of the scroll.

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.

A solid-state imaging device according to an embodiment of the present disclosure includes: a plurality of photoelectric converters that is stacked on a semiconductor substrate, and has wavelength selectivities different from each other; and a wiring line that is formed on the semiconductor substrate, and is electrically coupled to the plurality of photoelectric converters. Each of the photoelectric converters includes a photoelectric conversion film, and a first electrode and a second electrode that are disposed with the photoelectric conversion film interposed therebetween. The wiring line extends in a direction normal to the semiconductor substrate, and includes a vertical wiring line formed in contact with the second electrode of each of the photoelectric converters.

An image sensor includes a function layer including a photoelectric conversion region containing a plurality of semiconductor-type carbon nanotubes; a transparent electrode that collects first electric charges that are positive electric charges or negative electric charges, the positive electric charges or the negative electric charges being generated in the photoelectric conversion region upon entry of light; a first collection electrode that collects second electric charges having a polarity opposite to the first electric charges among the positive electric charges and the negative electric charges; a second collection electrode that collects the second electric charges; a first control electrode that controls movement of the second electric charges toward the first collection electrode; a second control electrode that controls movement of the second electric charges toward the second collection electrode; and an electric charge accumulator in which the second electric charges collected by the first collection electrode are accumulated.