A photoelectric conversion device in which an increase in driving voltage is inhibited is provided. The photoelectric conversion device includes a first electrode, a second electrode, and an organic compound layer; the organic compound layer is positioned between the first electrode and the second electrode; the organic compound layer includes a first layer; a structure body including projections is included between the first layer and the second electrode; and the structure body contains a first organic compound.

According to one embodiment, a flexible substrate including an insulating base including a plurality of first strip portions, a plurality of second strip portions, and a plurality of island-shaped portions located at the intersections of the first strip portions and the second strip portions, a plurality of electric elements each including a lower electrode, an upper electrode, and an active layer located between the lower electrode and the upper electrode, and overlapping with the island-shaped portions, and a first stress relaxation layer located between the lower electrode and the active layer, wherein the first stress relaxation layer is formed of a conductive resin material.

According to one embodiment, a flexible substrate including an insulating base including a plurality of first strip portions, a plurality of second strip portions, and a plurality of island-shaped portions located at the intersections of the first strip portions and the second strip portions, a plurality of electric elements each including a lower electrode, an upper electrode, and an active layer located between the lower electrode and the upper electrode, and overlapping with the island-shaped portions, and a first stress relaxation layer located between the lower electrode and the active layer, wherein the first stress relaxation layer is formed of a conductive resin material.

A photoelectric conversion element includes a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode in this order, wherein the photoelectric conversion layer includes quantum dots and a first organic compound, the first organic compound satisfies Formula (1), an electron affinity of a material used for the first interfacial layer, an electron affinity of the quantum dots, and an electron affinity of the first organic compound satisfy Formulas (2) and (3):

E2>E1  (1)

E1 [eV]: energy at short-wavelength end of optical wavelength region detected by the photoelectric conversion element

E2 [eV]: band gap of the first organic compound

E3<E4−0.2  (2)

E4−0.4<E5<E4  (3)

E3 [eV]: electron affinity of material used for the first interfacial layer

E4 [eV]: electron affinity of the quantum dots

E5 [eV]: electron affinity of the first organic compound.

A photoelectric conversion element includes a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode in this order, wherein the photoelectric conversion layer includes quantum dots and a first organic compound, the first organic compound satisfies Formula (1), an electron affinity of a material used for the first interfacial layer, an electron affinity of the quantum dots, and an electron affinity of the first organic compound satisfy Formulas (2) and (3):

E2>E1  (1)

E1 [eV]: energy at short-wavelength end of optical wavelength region detected by the photoelectric conversion element

E2 [eV]: band gap of the first organic compound

E3<E4−0.2  (2)

E4−0.4<E5<E4  (3)

E3 [eV]: electron affinity of material used for the first interfacial layer

E4 [eV]: electron affinity of the quantum dots

E5 [eV]: electron affinity of the first organic compound.

Light reduction in a wiring part connected to an optical device of an electronic device including the optical device is prevented. The electronic device includes an insulating layer, an interlayer connection wiring, and an upper layer wiring. The insulating layer is disposed adjacent to the lower layer wiring and includes a through hole. The interlayer connection wiring is a transparent wiring that is connected to the lower layer wiring in the through hole and is formed into a shape extending to a surface side of the insulating layer. The upper layer wiring is a transparent wiring that is stacked and connected to the interlayer connection wiring extending to the surface side of the insulating layer.

Light reduction in a wiring part connected to an optical device of an electronic device including the optical device is prevented. The electronic device includes an insulating layer, an interlayer connection wiring, and an upper layer wiring. The insulating layer is disposed adjacent to the lower layer wiring and includes a through hole. The interlayer connection wiring is a transparent wiring that is connected to the lower layer wiring in the through hole and is formed into a shape extending to a surface side of the insulating layer. The upper layer wiring is a transparent wiring that is stacked and connected to the interlayer connection wiring extending to the surface side of the insulating layer.

A solid-state imaging element (1) according to the present disclosure includes a pixel array unit (10) in which a plurality of light receiving pixels (11) is two-dimensionally arranged. Each of the light receiving pixels (11) includes an organic photoelectric conversion unit (61) and another photoelectric conversion unit. The organic photoelectric conversion unit (61) includes a photoelectric conversion layer (63) made of an organic semiconductor material, a first electrode (62) located on a light incident side of the photoelectric conversion layer (63), and a second electrode (65) located on a side opposite to the light incident side of the photoelectric conversion layer (63). The other photoelectric conversion unit is located on a side opposite to the light incident side of the organic photoelectric conversion unit (61), and performs photoelectric conversion in a wavelength region different from a wavelength region of the organic photoelectric conversion unit (61). The second electrode (65) is connected to a connection wiring (51) including a metal wiring (54) made of metal and a transparent wiring (53) made of a transparent conductive film. The metal wiring (54) extends in a horizontal direction from a peripheral portion of the light receiving pixel (11) to a peripheral portion of the pixel array unit (10).

A solid-state imaging element (1) according to the present disclosure includes a pixel array unit (10) in which a plurality of light receiving pixels (11) is two-dimensionally arranged. Each of the light receiving pixels (11) includes an organic photoelectric conversion unit (61) and another photoelectric conversion unit. The organic photoelectric conversion unit (61) includes a photoelectric conversion layer (63) made of an organic semiconductor material, a first electrode (62) located on a light incident side of the photoelectric conversion layer (63), and a second electrode (65) located on a side opposite to the light incident side of the photoelectric conversion layer (63). The other photoelectric conversion unit is located on a side opposite to the light incident side of the organic photoelectric conversion unit (61), and performs photoelectric conversion in a wavelength region different from a wavelength region of the organic photoelectric conversion unit (61). The second electrode (65) is connected to a connection wiring (51) including a metal wiring (54) made of metal and a transparent wiring (53) made of a transparent conductive film. The metal wiring (54) extends in a horizontal direction from a peripheral portion of the light receiving pixel (11) to a peripheral portion of the pixel array unit (10).

An imaging element according to an embodiment of the present disclosure includes a photoelectric conversion layer including an organic photoelectric conversion material, a hole transporting material, and an electron transporting material, in which the electron transporting material includes a fullerene compound monomer and a fullerene compound dimer.