A detection device includes a substrate, a plurality of photodiodes provided on the substrate, a plurality of transistors provided correspondingly to the respective photodiodes, a plurality of gate lines that extend in a first direction, a plurality of signal lines that extend in a second direction intersecting the first direction, a plurality of lower electrodes that are provided between the transistors and the photodiodes in a direction orthogonal to the substrate, and are provided correspondingly to the respective photodiodes, an upper electrode provided so as to extend across the photodiodes, and a reflective layer provided between the substrate and each of the photodiodes in the direction orthogonal to the substrate. Each of the lower electrodes has a smaller area than an area defined by the gate lines and the signal lines, and the reflective layer is provided between the lower electrodes adjacent to each other in a plan view.

A multifunctional imaging device is provided. The imaging device includes first to fourth light-receiving elements and first and second functional layers. The first to fourth light-receiving elements are photoelectric conversion elements having sensitivity to light of different wavelengths from each other. The first and second functional layers each include first and second transistors. The first functional layer and the fourth to first light-receiving elements are stacked in this order over the second functional layer. In each of the first to fourth light-receiving elements, a first conductive layer, a first buffer layer, a photoelectric conversion layer, a second buffer layer, and a second conductive layer are stacked in this order. The photoelectric conversion layer includes an organic compound, and the first buffer layer and the second buffer layer each include a metal or an organic compound. The first transistor is electrically connected to the first conductive layer of any of the first to fourth light-receiving elements. The second transistor is electrically connected to the first transistor.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material. The second organic semiconductor material has a Highest Occupied Molecular Orbital (HOMO) level being deeper than a Lowest Unoccupied Molecular Orbital (LUMO) level of the first organic semiconductor material and having a difference of 1.0 eV or more and 2.0 eV or less from the LUMO level of the first organic semiconductor material. The third organic semiconductor material has a crystalline property and has a linear absorption coefficient of 10000 cm.sup.−1 or less in a visible light region and an optical absorption edge wavelength of 550 nm or less.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material. The second organic semiconductor material has a Highest Occupied Molecular Orbital (HOMO) level being deeper than a Lowest Unoccupied Molecular Orbital (LUMO) level of the first organic semiconductor material and having a difference of 1.0 eV or more and 2.0 eV or less from the LUMO level of the first organic semiconductor material. The third organic semiconductor material has a crystalline property and has a linear absorption coefficient of 10000 cm.sup.−1 or less in a visible light region and an optical absorption edge wavelength of 550 nm or less.

A display device including: a display layer including a light emitting device, a photo-detector, and a dummy device; and a circuit layer including a pixel driving part, which is connected to the light emitting device, and a sensor driving part which is connected to the photo-detector, wherein the light emitting device and the dummy device are overlapped with the pixel driving part, and wherein the photo-detector is overlapped with the sensor driving part.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; an organic photoelectric conversion layer provided between the first electrode and second electrode; and a buffer layer provided between the first electrode and the organic photoelectric conversion layer, and including a mellitic acid derivative represented by the general formula (1).

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; an organic photoelectric conversion layer provided between the first electrode and second electrode; and a buffer layer provided between the first electrode and the organic photoelectric conversion layer, and including a mellitic acid derivative represented by the general formula (1).

A display device includes a first pixel that includes a first pixel driving circuit and a first light emitting element, a second pixel that includes a second pixel driving circuit and a second light emitting element, a sensor that includes a sensor driving circuit and a light detection element, a first data line that extends in a first direction and is electrically connected to the first pixel, a second data line that extends in the first direction and is electrically connected to the second pixel, and a readout line that extends in the first direction and is electrically connected to the sensor. The readout line is disposed on a different layer from at least one of the first data line and the second data line.

A display device includes a first pixel that includes a first pixel driving circuit and a first light emitting element, a second pixel that includes a second pixel driving circuit and a second light emitting element, a sensor that includes a sensor driving circuit and a light detection element, a first data line that extends in a first direction and is electrically connected to the first pixel, a second data line that extends in the first direction and is electrically connected to the second pixel, and a readout line that extends in the first direction and is electrically connected to the sensor. The readout line is disposed on a different layer from at least one of the first data line and the second data line.

A photoelectric conversion device in which an increase in driving voltage is inhibited is provided. The photoelectric conversion device includes a first electrode, a second electrode, and an organic compound layer; the organic compound layer is positioned between the first electrode and the second electrode; the organic compound layer includes a first layer; a structure body including projections is included between the first layer and the second electrode; and the structure body contains a first organic compound.