An organic light-emitting device and display apparatus, the device including a first electrode; a second electrode facing the first electrode; an emission layer between the first and second electrode; a hole control layer between the first electrode and the emission layer; and an electron control layer between the emission layer and the second electrode, wherein the emission layer includes a plurality of sub-emission layers to emit light having different wavelengths, at least portions of the plurality of sub-emission layers do not overlap one another, the plurality of sub-emission layers include: a first sub-emission layer including a first color light-emitting dopant, and a second sub-emission layer including a second color light-emitting dopant, the first and second sub-emission layers each include a hole-transporting and electron-transporting host which form an exciplex, and a triplet energy of the exciplex is equal to or greater than triplet energies of the first and second color light-emitting dopant.

A white light emitting material having a chemical structural formula represented by formula (I), a preparation method thereof and application thereof. The preparation method comprises subjecting tris(4-iodophenyl)amine and 4-methoxyphenylacetylene or tris(4-iodophenyl)amine and methyl 4-ethynylbenzoate to a coupling reaction under protection of a protective gas and catalysis of a Pd/Cu mixed catalyst, to obtain the white light emitting material. A novel temperature-sensitive light emitting material is synthesized through a one-step method. The material is applied to the field of diode luminescence based on the temperature-sensitive characteristic. White light luminescence can be finally realized only by reasonably controlling the temperature and duration time during heating a substrate. Compared with the existing art, the method greatly saves raw material costs and manufacturing process costs, and provides a novel idea and strategy for use of a white organic light emitting diode.

Provided is a light-emitting diode and a method for preparing the same. The light-emitting diode includes an anode, a hole transport layer, a perovskite light-emitting layer, an electron transport layer and a cathode stacked in sequence, in which the perovskite light-emitting layer includes a first sublayer and a second sublayer stacked in sequence, with a material for forming the first sublayer including an inorganic perovskite material, and with a material for forming the second sublayer being an organic perovskite material.

The present specification relates to an organic light emitting device.

The present disclosure is related to an array substrate. The array substrate may include a base substrate and a pixel defining layer on the base substrate. The pixel defining layer may include a plurality of thickness thinning regions. The thickness thinning regions may have a smaller height than other areas of the pixel define layer on the base substrate. The plurality of the thickness thinning regions may be configured to guide flow of fillers to form an encapsulating layer on the pixel defining layer.

A heterocyclic compound represented by Chemical Formula 1 and an organic light emitting device including the same, and the heterocyclic compound which is used as a material of an organic material layer of the organic light emitting device and provides improved efficiency, low driving voltage and improved lifetime characteristics of the organic light emitting device.

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The present invention relates to a novel organic compound and an organic electroluminescent device using the same and, more specifically, to: an organic compound having excellent heat resistance, carrier transport capability, luminescence capability, electron injection/transport capability, electrochemical stability, and the like; and an organic electroluminescent device which, by including the compound in one or more organic layers, has improved characteristics such as improved luminous efficiency, driving voltage, and lifespan.

A preparation method of a light-emitting device includes forming a composite transition layer between a cathode and a quantum dot light-emitting layer and forming an anode on a surface of the quantum dot light-emitting layer away from the cathode. The composite transition layer includes a first transition layer, a second transition layer, and a third transition layer. The first transition layer is arranged on one side close to the cathode and includes a metal halide. The second transition layer is arranged on a surface of the first transition layer away from the cathode and includes a hydrogen halide. The third transition layer is arranged on a surface of the second transition layer away from the first transition layer and includes an ester compound.

The disclosure relates to a quantum dot light-emitting diode and a fabricating method thereof. The quantum dot light-emitting diode includes a quantum dot layer and an electron transport layer formed on the quantum dot layer. A surface of a side of the quantum dot layer close to the electron transport layer bonds to an ester substance.

A light-emitting diode and a preparation method of the light-emitting diode are provided in the present application. The light-emitting diode includes an anode and a cathode which are arranged opposite to each other, a luminescent layer arranged between the anode and the cathode, an electron transport layer arranged between the cathode and the luminescent layer, and a composite film arranged between the cathode and the electron transport layer. Where the composite film includes an aluminum oxide film arranged adjacent to the electron transport layer, and a nano metal oxide film or a silicon nitride film arranged away from the electron transport layer. The light-emitting diode according to the present application may block water and oxygen from infiltrating into it effectively, so that a poor stability of the light-emitting diode device in a water-oxygen environment is improved.