Provided is a display device having defined therein an opening corresponding to a boundary region, and including a plurality of insulating layers disposed on a base layer, an organic layer disposed in the opening, a first connection electrode disposed on the uppermost insulating layer among the plurality of insulating layers, connected to a first signal line through a first contact hole passing through the organic layer, and connected to a transistor through a second contact hole passing through corresponding insulating layers among the plurality of insulating layers, and a second signal line disposed on a layer different from a layer on which the first line is disposed.

The present invention relates to compounds of the formula (1) which are suitable for use in electronic devices, in particular organic electroluminescent devices, and to organic electroluminescent devices which comprise these compounds.

Provided are a color converting substrate and a display device including same. The color converting substrate includes: a base portion in which a first light transmission area, a first light blocking area, and a second light transmission area, which are sequentially and closely arranged in a first direction, are defined; a first wavelength converting pattern located on the base portion and configured to wavelength-covert a first color light into a second color light; a second wavelength converting pattern located on the base portion and configured to wavelength-convert the first color light into a third color light; and a light transmission pattern located on the base portion and configured to transmit the first color light.

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter that is less than twice an electron diffusion length of the semiconductor layer. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

This disclosure relates to the field of display technologies and, in particular to a thin film packaging structure and a display panel. A thin film packaging structure includes a first inorganic packaging layer for covering a device to be packaged; an organic packaging layer formed at a side of the first inorganic packaging layer; a second inorganic packaging layer formed at a side of the organic packaging layer facing away from the first inorganic packaging layer; and at least one first inorganic adjusting layer formed at a side of the first inorganic packaging layer facing away from the device to be packaged. The at least one first inorganic adjusting layer has an elasticity modulus greater than that of the first inorganic packaging layer or the second inorganic packaging layer.

A display device has a first non-foldable area, a second non-foldable area spaced apart from the first non-foldable area, and a foldable area disposed between the first non-foldable area and the second non-foldable area. The display device includes: a support member; a first adhesive layer disposed on the support member; a buffer member disposed on the first adhesive layer; a second adhesive layer disposed on the buffer member; and a flexible display panel disposed on the second adhesive layer. At least one of the support member and the buffer member includes a first area overlapping the foldable area having at least one first uneven area to facilitate bending, the at least one first uneven area being formed on a surface of the first area.

A display device has a first non-foldable area, a second non-foldable area spaced apart from the first non-foldable area, and a foldable area disposed between the first non-foldable area and the second non-foldable area. The display device includes: a support member; a first adhesive layer disposed on the support member; a buffer member disposed on the first adhesive layer; a second adhesive layer disposed on the buffer member; and a flexible display panel disposed on the second adhesive layer. At least one of the support member and the buffer member includes a first area overlapping the foldable area having at least one first uneven area to facilitate bending, the at least one first uneven area being formed on a surface of the first area.

A method of manufacturing a display apparatus includes forming a thin-film transistor on a substrate and forming a planarization layer to cover the thin-film transistor, forming, on the planarization layer, a pixel electrode electrically connected to the thin-film transistor and a pixel defining layer exposing at least a center portion of the pixel electrode, and defining at least one groove having a closed curve shape at a location corresponding to a second non-display area. When the thin-film transistor is formed, a voltage line is also formed at a location corresponding to a first non-display area. When the at least one groove is formed, a portion of the planarization layer disposed between the pad area and the display area is simultaneously removed such that a portion of the voltage line between the pad area and the display area is exposed.

The present application provides display panels, transparent display panels and manufacturing methods therefor. A transparent display panel includes a light transmitting substrate, pixel structures, second electrode connecting portions, and a nano-material layer. A display region of the light transmitting substrate includes alternately distributed pixel regions and non-pixel regions. The pixel structures are located in the pixel regions, each including: a first electrode close to the light transmitting substrate, a second electrode away from the light transmitting substrate, and a light emitting block between the first electrode and the second electrode. The second electrode connecting portions are located in the non-pixel regions, and connect adjacent second electrodes, and one or more materials for the second electrode connecting portions are the same as the one or more materials for the second electrodes, both including transflective materials. The nano-material layer includes a plurality of nano-island structures separated from each other, and is located at least on a side of the second electrode connecting portions away from the light transmitting substrate, and is configured to excite surface plasma polaritons corresponding to infrared light and scatter the infrared light.

The disclosure relates to a quantum dot light-emitting diode and a fabricating method thereof. The quantum dot light-emitting diode includes a quantum dot layer and an electron transport layer formed on the quantum dot layer. A surface of a side of the quantum dot layer close to the electron transport layer bonds to an ester substance.