A display device includes: a substrate; an insulating layer on a top surface of the substrate; a plurality of light-emitting diodes on the insulating layer and including two light-emitting diodes spaced apart from each other and having a transmission area therebetween; an encapsulation member covering the plurality of light-emitting diodes; and a rear cover layer located on a rear surface of the substrate and including a first portion located in the transmission area, wherein the first portion includes a transparent material.

A selection transistor and a light-emitting transistor are formed in a pixel. The selection transistor includes a gate electrode connected to a scan line, a first source/drain electrode connected to a signal line, and a second source/drain electrode. The light-emitting transistor includes a gate electrode connected to the second source/drain electrode of the selection transistor, a first electrode connected to a first line, a second electrode connected to a second line, and a channel layer including quantum dots. The light-emitting transistor controls the quantum dots to emit light by a carrier flowing through the channel layer.

The invention aims to provide a photosensitive colored resin composition and a heat resistant colored resin film produced therefrom that has the function of absorbing light in the shorter visible wavelength range with high sensitivity to serve effectively as planarizing film, insulation layer, and barrier rib used in organic luminescence apparatuses and display elements and the function of reducing external light reflection. The photosensitive colored resin composition includes an alkali-soluble resin (a), a photosensitive compound (b), and a compound (c) having an absorption maximum in the wavelength range of 400 nm or more and less than 490 nm, the photosensitive compound (b) containing a photosensitive compound (b1), the photosensitive compound (b1) being such that its maximum absorption wavelength in the range of 350 nm or more and 450 nm or less is located within the wavelength range of 350 nm or more and 390 nm or less.

An organic light emitting display device including a plurality of pixels having a first sub-pixel and a second sub-pixel comprises a base substrate; a first anode disposed on the base substrate in the first sub-pixel; a second anode disposed on the base substrate in the second sub-pixel; an anode connection part connected to the first and second anodes; a driving transistor including a drain electrode that contacts the anode connection part and switching a driving power supplied to the first and second anodes; an organic light emitting layer disposed on the first and second anodes; a cathode disposed on the organic light emitting layer; and a dummy repair part including a plurality of metal layers overlapping each other with an insulating film interposed therebetween in a laser irradiation area, wherein at least one metal layer among the plurality of metal layers contacts the drain electrode and the cathode has an opened shape in the laser irradiation area.

A technique, comprising: forming in situ on a support substrate: a first metal layer; a light-absorbing layer after the first metal layer; a conductor pattern after the light-absorbing layer; and a semiconductor layer after the conductor pattern; patterning the semiconductor layer using a resist mask to form a semiconductor pattern defining one or more semiconductor channels of one or more semiconductor devices; and patterning the light-absorbing layer using the resist mask and the conductor pattern, so as to selectively retain the light-absorbing layer in regions that are occupied by at least one of the resist mask and the conductor pattern.

A device configuration designed to mitigate display defects resulting from voltage drops in current supply lines offers a display with better display quality. The display includes: a plurality of VOLETs arranged in arrays along a first direction and a second direction; a data line supplying a voltage for controlling gate electrodes of the plurality of VOLETs; TFTs each connected between a gate electrode of each of the VOLET and the data line and controlling voltage supply to the gate electrodes of the VOLETs; a gate line connected to gate electrodes of the TFTs and transmitting a signal that controls the TFTs; a plurality of current supply lines extending along the first direction and supplying a current to each of a group of VOLETs aligned along the first direction; and an auxiliary line extending along the second direction and connecting at least two of the plurality of current supply lines.

The present disclosure provides an organic thin film and a method for preparing the same, a display device, and an optical device, in which the method includes: providing a base substrate; forming an isomerization generating layer on the base substrate, the isomerization generating layer including a first region and a second region; adding a precursor solution on a surface of the isomerization generating layer away from the base substrate, and allowing surface energy of the second region to be greater than surface energy of the first region, so as to form the organic thin film from the precursor solution, the precursor solution being at least partially located in the second region.

The present disclosure provides an organic thin film and a method for preparing the same, a display device, and an optical device, in which the method includes: providing a base substrate; forming an isomerization generating layer on the base substrate, the isomerization generating layer including a first region and a second region; adding a precursor solution on a surface of the isomerization generating layer away from the base substrate, and allowing surface energy of the second region to be greater than surface energy of the first region, so as to form the organic thin film from the precursor solution, the precursor solution being at least partially located in the second region.

A display device includes: a substrate configured to contain an organic material; a first underlying film provided above the substrate; a thin film transistor provided above the first underlying film; a semiconductor film included in the thin film transistor and configured to have a channel region; and an electric field inhibition film provided between the first underlying film and the semiconductor film and configured to overlap the channel region in a plan view. The electric field inhibition film has a higher permittivity than the first underlying film.

The invention provides a display apparatus and a method for manufacturing the same. The display apparatus includes a substrate and a thin-film transistor. The thin-film transistor includes a semiconductor layer disposed on the substrate and includes a gate electrode overlapping the semiconductor layer and insulated from the semiconductor layer. The semiconductor layer includes a polysilicon layer and an organic layer. The polysilicon layer has a first surface and has an uneven surface overlapping the first surface. The organic layer is disposed on the uneven surface of polysilicon layer and includes an organic semiconductor material.