An aspect of the present disclosure is a method that includes exchanging at least a portion of a first cation of a perovskite solid with a second cation, where the exchanging is performed by exposing the perovskite solid to a precursor of the second cation, such that the precursor of the second cation oxidizes to form the second cation and the first cation reduces to form a precursor of the first cation.

An organic substrate and method of making with optimal thermal warp characteristics is disclosed. The organic substrate has one or more top layers and one or more bottom layers. A chip footprint region is a surface region on each of the top and bottom layers that is defined as the projection of one or more semiconductor chips (chips) on the surface of each of the top and bottom layers. One or more top removal patterns are located on and may or may not remove material from the surface of one or more of the top layers within the chip footprint region of the respective top layer. One or more bottom removal patterns are located on and remove material from the surface of one or more of the bottom layers outside the chip footprint region of the respective bottom layer. The removal of the material from one or more of the top layers and/or bottom layers changes and optimizes a thermal warp of the organic substrate. In some embodiments, a Shape Inversion Temperature (SIT) of the substrate is made equal to or above a reflow temperature.

When organic photovoltaic components are laser-structured, protuberances occur, which can protrude significantly beyond the height of the layered stack. The invention describes a technique for stabilising the laser-structured protuberances so that further processing of the semi-finished product is possible, and describes the integration of said product in a subsequent encapsulation of the OPV component.

An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Provided are a laminate including an organic material mask and a method for preparing an organic light emitting device using the same. The laminate includes a substrate; and a mask provided on the substrate and including an organic material.

A method of manufacturing a laminate, transistor, and method of manufacturing transistor using a composition that includes an organic compound having a hydroxy group; a first cross-linking agent that is at least one organic silicon compound selected from the group including an organic silicon compound including a siloxane bond in the molecule and having three or more cyclic ether groups in the molecule, a chain organic silicon compound including two or more siloxane bonds in the molecule and having two or more cyclic ether groups in the molecule, a cyclic organic silicon compound including D unit in the molecule and having four or more cyclic ether groups bonded to a silicon atom of the D unit in the molecule, and a cyclic organic silicon compound including a T unit in the molecule and having two or more cyclic ether groups in the molecule; and a photocationic polymerization initiator.

A display apparatus includes: a first pixel electrode of a first pixel; a second pixel electrode of a second pixel adjacent to the first pixel, the first and second pixels to emit light of different colors from each other; a first lower emission layer on the first pixel electrode; a second lower emission layer on the second pixel electrode; a first upper emission layer on the first lower emission layer; a second upper emission layer on the second lower emission layer; a charge generation layer between the first lower emission layer and the first upper emission layer, and between the second lower emission layer and the second upper emission layer; and a counter electrode extending across the first upper emission layer and the second upper emission layer. The charge generation layer includes first and second parts, and electrical conductivities of the first and second parts are different from each other.

The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.

A display apparatus includes a substrate comprising a first pixel region and a second pixel region adjacent to the first pixel region; a circuit device layer on the substrate; a first light-emitting device module on the circuit device layer, the first light-emitting device module comprising a first light-emitting device overlapping the first pixel region to display a first color; and a second light-emitting device module on the first light-emitting device module, the second light-emitting device module having a first pixel penetration hole overlapping the first pixel region, the second light-emitting device module further comprising a second light-emitting device overlapping the second pixel region to display a second color different from the first color.