A GHeT includes a bottom gate formed on a substrate; a first dielectric layer (DL) formed on the bottom gate; a monolayer film formed of an atomically thin material on the first DL; a bottom contact (BC) formed on part of the monolayer film; a second DL formed on the BC; a top contact (TC) formed on the second DL on top of the BC; a network of CNTs formed on the TC and the monolayer film, to define an overlap region with the monolayer film; a third DL formed on the CNT network, the monolayer film and the TC; and a top gate formed on the third DL and overlapping with the overlap region. Such GHeT design allows gate tunability of Gaussian peak position, height and width that define Gaussian transfer characteristic, thereby enabling simplified circuit architectures for various spiking neuron functions for emerging neuromorphic applications.

A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.

A photovoltaic element including at least one photovoltaic cell at least partially segmented and having a base electrode, a top electrode, and a layer system comprising at least one photoactive layer, wherein the layer system is arranged between the base electrode and the top electrode, the segments are configured such that at least the top electrode and the layer system of one of the segments are separated from the top electrode and the layer system of another segment by at least one cavity to prevent contact between one another, the at least one cavity is formed substantially vertically relative to the layer system of the at least one photovoltaic cell, and the segments are electrically conductively connected in parallel with one another such that a flow of electric current through the at least one photovoltaic cell is distributed over each of the segments.

A display device includes a pixel array disposed in a display area, a connection pad disposed in a pad area, and a transfer wiring electrically connected to the connection pad to transfer a signal to the pixel array. The pixel array includes a light-emitting element including a first electrode including a multi-layered structure including a metal layer and a metal oxide layer, an organic light-emitting layer disposed on the first electrode, and a second electrode disposed on the organic light-emitting layer. The connection pad includes an upper pad conductive layer having a single-layered structure including a metal oxide.

According to one embodiment, a manufacturing method is to manufacture a display device in which a partition including a lower portion and an upper portion arranged on the lower portion to protrude from a side surface of the lower portion is arranged on a boundary between adjacent sub-pixels, and the method comprises forming a metal layer above a substrate, forming the upper portion on the metal layer, reducing a thickness of a first portion of the metal layer exposed from the upper portion by anisotropic etching, and forming the lower portion by reducing a width of a second portion of the metal layer located under the upper portion by isotropic etching.

According to one embodiment, a display device manufacturing method includes preparing a processing substrate including a lower electrode, a rib including and a partition, forming a first organic layer covering the lower electrode, and a second organic layer located on the upper portion, forming a first upper electrode located on the first organic layer and a second upper electrode located on the second organic layer, forming a sealing layer, forming a resist covering a part of the sealing layer, performing anisotropic dry etching using the resist as a mask to reduce a thickness of the sealing layer exposed from the resist, and performing isotropic dry etching using the resist as a mask and using a mixture gas of fluorine-based gas and oxygen to remove the sealing layer exposed from the resist.

According to one embodiment, a method of manufacturing a display device, includes forming a first thin film including a first light-emitting layer over a first subpixel, a second subpixel, and a third subpixel, removing the first thin film of the second subpixel, forming a second thin film including a second light-emitting layer over the first subpixel, the second subpixel, and the third subpixel, removing the second thin film of the first subpixel and the third subpixel, removing the first thin film of the third subpixel, forming a third thin film including a third light-emitting layer over the first subpixel, the second subpixel, and the third subpixel, and removing the third thin film of the first subpixel and the second subpixel.

A display apparatus includes a substrate including at least one hole disposed in a hole area of the substrate, a thin film transistor disposed on the substrate, a light-emitting component disposed on the substrate and electrically connected to the thin film transistor, an insulating layer disposed on the substrate, a thin film encapsulation layer disposed on the substrate, and a laser blocking layer. The substrate includes a display area and a non-display area that is disposed between the display area and the hole area. The laser blocking layer is disposed on the insulating layer in the non-display area.

A method of manufacturing a cover window includes: cutting mother glass into panel glass; chamfering the panel glass; etching an entire surface of the panel glass with a first etching solution including a fluorine-based compound; etching the entire surface of the panel glass with a second etching solution different from the first etching solution; and cleaning the panel glass with a basic cleaning solution.

According to one embodiment, a method of manufacturing a display device includes preparing a processing substrate with a lower electrode, a rib, and a partition including a lower portion and an upper portion, forming a first organic layer and a second organic layer spaced apart from the first organic layer, forming a first upper electrode and a second upper electrode spaced apart from the first upper electrode, forming a sealing layer located on the first upper electrode and the second upper electrode, forming a resist covering a part of the sealing layer, performing anisotropic dry etching using the resist as a mask, performing isotropic dry etching using the resist as a mask, and removing the sealing layer exposed from the resist.