Provided is a light-emitting diode and a method for preparing the same. The light-emitting diode includes an anode, a hole transport layer, a perovskite light-emitting layer, an electron transport layer and a cathode stacked in sequence, in which the perovskite light-emitting layer includes a first sublayer and a second sublayer stacked in sequence, with a material for forming the first sublayer including an inorganic perovskite material, and with a material for forming the second sublayer being an organic perovskite material.

In a first aspect, the present invention relates to a perovskite material comprising negatively charged layers alternated with and neutralized by positively charged layers; the negatively charged layers having a general formula selected from the list consisting of: L.sub.n−1M.sub.nX.sub.3n+1, L.sub.nM.sub.nX.sub.3n+2, and L.sub.n−1M′.sub.nX.sub.3n+3, and the positively charged layers comprising: one or more organic ammonium cations independently selected from monovalent cations Q and divalent cations Q′, or a polyvalent cationic conjugated organic polymer Z, wherein Q, Q′ and Z comprise each a π-conjugated system in which at least 8 and preferably at least 10 atoms participate, L is a monovalent cation, M.sub.n are n independently selected metal cations averaging a valence of two, M′.sub.n are n independently selected metal cations averaging a valence equal to 2+2/n, X is a monovalent anion, and n is larger than 1.

A composition for use as an electronic material. The composition contains at least one organic semiconducting material, and at least one electrically insulating polymer forming a semiconducting blend wherein the insulating polymer acts as a matrix for the organic semiconducting material resulting in an interpenetrating morphology of the polymer and the semiconductor material. The variation of charge carrier mobility with temperature in the semiconducting blend is less than 20 percent in a temperature range. A method of making a film of an electronic material. The method includes dissolving at least one organic semiconducting material and at least one insulating polymer into an organic solvent in a pre-determined ratio resulting in a semiconducting blend, depositing the blend onto a substrate to form a film comprising an interpenetrating morphology of the at least one insulating polymer and the at least one organic semiconductor material.

Described are concepts, systems, circuits, devices, structures and methods for depositing carbon nanotubes (CNTs) uniformly over a substrate. The described concepts, systems, circuits, devices, structures and methods meet at least several requirements; namely, the systems, circuits, devices, structures are: (1) manufacturable; (2) silicon-CMOS compatible; and (3) provide a path for realizing energy efficiency benefits utilizing silicon. In embodiments, described is an illustrative CNT solution-based deposition technique that addresses all of these requirements. Also described is a method for providing carbon nanotube field effect transistors (CNFETs) using uniform and reproducible fabrication techniques suitable for use across industry-standard wafers and which may use the same equipment currently being used to fabricate silicon product wafers. Also described are CNFETs fabricated within commercial silicon manufacturing facilities and having wafer-scale uniformity and reproducibility across multiple wafers.

The present application relates to copper-doped double perovskites, for example, copper-doped double perovskites of the formula (I) and to uses thereof, for example as low-bandgap materials such as a semiconducting material in a device. The present application also relates to methods of tuning the bandgap of a Cs.sub.2SbAgZ.sub.6 double perovskite (for example, wherein Z is Cl) comprising doping the double perovskite with copper.
Cs.sub.2Sb.sub.1-aAg.sub.1-bCu.sub.2xZ.sub.6  (I)

A compound of formula (I):
EAG-EDG-EAG   (I)
wherein each EAG is an electron accepting group; and EDG is an electron-donating group of formula (IIa): ##STR00001##
The compound of formula (I) may be used in a photosensitive layer of an organic photodetector wherein the photosensitive layer comprises the compound of formula (I) and an electron donor. A photosensor may comprise the organic photodetector and a light source, e.g. a near infra-red light source.

Disclosed is a quantum dot light-emitting diode including a positive electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a negative electrode, wherein the hole injection layer is a p-type oxide semiconductor represented by Formula 1 below:
Cu.sub.2Sn.sub.2-XS.sub.3—(Ga.sub.X).sub.2O.sub.3,  [Formula 1] wherein X is greater than 0.2 and less than 1.5 (0.2<x<1.5).

A method of depositing a cathode on an organic light emitting diode (OLED) stack is provided. The method includes providing a substrate having at least a partial organic light emitting diode (OLED) stack disposed on a surface of the substrate. The method further includes depositing, on top of the partial OLED stack, a solution comprising a metal compound. The method further includes forming a conductive solid layer from the metal compound in the solution to form a cathode for the partial OLED stack.

Disclosed are a composition for forming a hole transport layer of a light-transmitting solar cell, a method for manufacturing the light-transmitting solar cell, and a light-transmitting solar cell manufactured thereby. The light-transmitting solar cell manufactured with the composition for forming the hole transport layer may have excellent durability and therefore, not only deposit a transparent electrode, which is an upper electrode, without damage even without buffer layer, thereby reducing the process cost but also deposit the transparent electrode without damage by using a general sputter equipment even without using an expensive special sputter equipment.

Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasi epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.