A composition containing a p-type semiconductor material and an n-type semiconductor material, an insulating material; and a solvent, wherein the n-type semiconductor material contains a non-fullerene compound, the insulating material is preferably a material that dissolves in an amount of 0.1 wt % or more at 25 C. in a solvent, preferably contains a polymer containing a constituent unit represented by Formula (I): wherein R.sup.i1 represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 20 carbon atoms, and R.sup.i2 represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 20 carbon atoms, a group represented by the following Formula (II-1), a group represented by the following Formula (II-2), or a group represented by the following Formula (II-3).

The present application discloses a thin film transistor, a display panel and a display apparatus having the same, and a fabricating method thereof. The thin film transistor includes a base substrate and an active layer on the base substrate having a first portion corresponding to a channel region, a second portion corresponding to a source electrode contact region, and a third portion corresponding to a drain electrode contact region, wherein the second portion and the third portion contain a polymer carbon nanotubes composite including a polymer and a carbon nanotubes material.

An organic thin film transistor and a method of manufacturing the same, the transistor including a gate electrode; an organic semiconductor layer overlapping the gate electrode; and an insulating layer between the gate electrode and the organic semiconductor layer, the insulating layer having an organic/inorganic hybrid region, wherein the organic/inorganic hybrid region includes a polymer and an inorganic material that is chemically bonded to the polymer through a reactive group on the polymer, and the insulating layer includes a space adjacent to the polymer, the inorganic material being positioned in the space.

The present disclosure relates to a cellulose-polymer composite solar cell that is substantially biodegradable and fabricated using environmentally friendly materials and methods. The polymer solar cell comprises an electrically conductive cellulose-polymer composite and an electrically semiconductive cellulose-polymer composite.

The present application discloses a thin film transistor, a display panel and a display apparatus having the same, and a fabricating method thereof. The thin film transistor includes a base substrate and an active layer on the base substrate having a first portion corresponding to a channel region, a second portion corresponding to a source electrode contact region, and a third portion corresponding to a drain electrode contact region, wherein the second portion and the third portion contain a polymer carbon nanotubes composite including a polymer and a carbon nanotubes material.

A method of manufacturing a patterned film includes forming a first film including a semiconductor nanoparticle and an additive, wherein the additive includes a polythiol compound, the semiconductor nanoparticle includes an organic ligand (for example, on a surface thereof), and the organic ligand includes a first functional group bonded to the surface of the semiconductor nanoparticle and a carbon-carbon unsaturated bond; exposing a portion of the first film to a radiation to cause a change in a solubility of the semiconductor nanoparticle in the exposed area with respect to a first solvent; contacting the radiation treated film with the first solvent to remove at least a portion of an unexposed area of the radiation treated film to obtain a patterned film. A light emitting device includes such a patterned film as a light emitting layer.

An object of the present invention is to provide an organic thin film transistor exhibiting high carrier mobility and a low threshold voltage and having excellent heat resistance, a method of manufacturing an organic thin film transistor, an organic semiconductor composition, an organic semiconductor film, and a method of manufacturing an organic semiconductor film. The organic thin film transistor according to the present invention includes, on a substrate, a gate electrode; an organic semiconductor layer containing an organic semiconductor compound; a gate insulating layer provided between the gate electrode and the organic semiconductor layer; and a source electrode and a drain electrode which are provided to be in contact with the organic semiconductor layer and are connected to each other via the organic semiconductor layer, in which the organic semiconductor layer is in contact with a block copolymer layer containing a block copolymer or further contains the block copolymer, and in which the organic semiconductor compound has a molecular weight of 2,000 or greater and has a repeating unit represented by Formula (1).

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A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide layer is provided over and in contact with the first metal-chalcogenide layer. The first metal-chalcogenide layer has a first conductivity type and the second metal-chalcogenide layer has a second conductivity type. The plane of contact between the first and second metal-chalcogenide layers creates the p-n junction of the built-in diode. Then a polymer layer is selectively deposited on the second metal-chalcogenide layer. The second metal-chalcogenide layer provides ions to the polymer layer to change its resistivity. A top electrode is then provided over the polymer layer. An exemplary memory cell may have the following stacked structure: first electrode/n-type semiconductor/p-type semiconductor/conjugated polymer/second electrode.

A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide layer is provided over and in contact with the first metal-chalcogenide layer. The first metal-chalcogenide layer has a first conductivity type and the second metal-chalcogenide layer has a second conductivity type. The plane of contact between the first and second metal-chalcogenide layers creates the p-n junction of the built-in diode. Then a polymer layer is selectively deposited on the second metal-chalcogenide layer. The second metal-chalcogenide layer provides ions to the polymer layer to change its resistivity. A top electrode is then provided over the polymer layer. An exemplary memory cell may have the following stacked structure: first electrode/n-type semiconductor/p-type semiconductor/conjugated polymer/second electrode.

Disclosed is a flexible electronic device having an adhesive function, including an adhesive tape that includes a flexible film and an adhesive layer formed on one side of the flexible film, and an electronic device formed on a remaining side of the flexible film of the adhesive tape. Accordingly, the flexible electronic device of the present invention is transferred on a surface of various flexible materials or materials having a curved surface so as to freely adhere and minimize breakage of the electronic device and maintain performance over a long period of time, even if the substrate is modified or repeatedly bent.